R. Dwivedi
R. Dweivedi received the Ph.D. degree in electronics engineering in 1978 from Banaras Hindu University. He has published over 50 research papers in the area of solar cells, MOS devices and IC compatible sensors. He has worked as a lecturer for about five years and since April 1986 he is reader in the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University. His current research activities are in the areas of photovoltaic and MOS devices, silicon technology and IC compatible sensors.

Selected Research Publications
Title: Development and characterisation of palladium doped tin oxide thick film paste for gas sensors.
Author: Srivastava, SK; Srivastava, R; Dwivedi, R; Srivastava, R
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, MICROELECT RES CTR, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IETE Journal of Research; March-June 1997; vol.43, no.2-3, p.215-20
Publisher: India : Instn. Electron. & Telecommun. Eng, 1997
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of low and high temperature annealing on the electrical properties of pure N{sub 2}O/SiH{sub 4} PECVD SiO{sub 2} deposited at a high rate.
Author: Chanana, RK; Upadhyay, HN; Dwivedi, R; Srivastava, SK
Affiliation: Centre for Res. in Microelectron., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, CTR MICROELECTR RES, VARANASI 221005, UTTAR PRADESH, INDIA
Source: International Journal of Electronics; April 1996; vol.80, no.4, p.525-32
Publisher: UK : Taylor & Francis, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of low and high temperature annealing on the electrical properties of pure N{sub 2}O/SiH{sub 4} PECVD SiO{sub 2} deposited at a high rate.
Author: Chanana, RK; Upadhyay, HN; Dwivedi, R.; Srivastava, SK
Affiliation: Centre for Res. in Microelectron., Banaras Hindu Univ., Varanasi, India
Source: International Journal of Electronics; April 1996; vol.80, no.4, p.525-32
Publisher: UK : Taylor & Francis, 1996
Doc. Type: Article
Copyright: �2004 IEE

Title: Electrical properties of 6.3 nm RF oxygen plasma oxide grown near room temperature with in situ dry cleaning of Si surface.
Author: CHANANA, RK; UPADHYAY, HN; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; May 1995; vol.38, no.5, p.1075-80
Publisher: UK : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Integrated sensor array for detection of alcohols and alcoholic beverages.
Author: Nayak, MS; Dwivedi, R.; Srivastava, SK
Affiliation: Centre for Res. in Microelectron., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Engineers (India) Electronics and Telecommunication Engineering Division; March 1995; vol.75, p.94-8
Publisher: India : 1995
Doc. Type: Article
Copyright: �2004 IEE

Title: FOWLER-NORDHEIM EMISSION AND ELECTRON TRAPPING IN PURE N2O/SIH(4) PECVD OXIDE DEPOSITED ON N-2, H-2 AND O-2 PLASMA PRECLEANED SI WAFERS
Author: UPADHYAY, HN; CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: SOLID-STATE ELECTRONICS; SEP 1994; v.37, no.9, p.1671-1672
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Fowler-Nordheim emission and electron trapping in pure N{sub 2}O/SiH{sub 4} PECVD oxide deposited on N{sub 2}, H{sub 2} and O{sub 2} plasma precleaned Si wafers.
Author: Upadhyay, HN; Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Solid-State Electronics; Sept. 1994; vol.37, no.9, p.1671-2
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE

Title: Ratio method for single component gas analysis using doped tin oxide thick film sensors.
Author: NAYAK, MS; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, CTR MICROELECTR RES, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221055, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication Engineers; March-June 1994; vol.40, no.2-3, p.93-5
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of annealing and plasma precleaning on the electrical properties of N{sub 2}O/SiH{sub 4} PECVD oxide as gate material in MOSFETs and CCDs.
Author: CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, CTR RES MICROELECTR, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1993; vol.36, no.7, p.1021-6
Publisher: UK : 1993
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of annealing and plasma precleaning on the electrical properties of N{sub 2}O/SiH{sub 4} PECVD oxide as gate material in MOSFETs and CCDs.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Solid-State Electronics; July 1993; vol.36, no.7, p.1021-6
Publisher: UK : 1993
Doc. Type: Article
Copyright: �2004 IEE

Title: Negative bias instability in silicon dioxide films grown using oxidise-etch-oxidise process.
Author: RAI, BP; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Nov. 1992; vol.35, no.11, p.1645-7
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Silicon wafer cleaning with CF{sub 4}/H{sub 2} plasma and its effect on the properties of dry thermally grown oxide.
Author: CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Oct. 1992; vol.35, no.10, p.1417-21
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Silicon wafer cleaning with CF{sub 4}/H{sub 2} plasma and its effect on the properties of dry thermally grown oxide.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Solid-State Electronics; Oct. 1992; vol.35, no.10, p.1417-21
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE

Title: Study of electrical properties of SiO{sub 2} grown over plasma-cleaned silicon surfaces.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Solid-State Electronics; Dec. 1991; vol.34, no.12, p.1463-5
Publisher: UK : 1991
Doc. Type: Article
Copyright: �2004 IEE

Title: Study of electrical properties of SiO{sub 2} grown over plasma-cleaned silicon surfaces.
Author: CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Dec. 1991; vol.34, no.12, p.1463-5
Publisher: UK : 1991
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A titanium dioxide-based MOS hydrogen sensor.
Author: YADAVA, L; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, CTR RES MICROELECTR, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Oct. 1990; vol.33, no.10, p.1229-34
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Hydrogen gas micro sensor based on SiO{sub 2} and TiO{sub 2} systems.
Author: Yadav, L.; Yadava, PK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; May-Aug. 1990; vol.36, no.3-4, p.195-7
Publisher: India : 1990
Doc. Type: Article
Copyright: �2004 IEE

Title: Nature and mechanism for plasma deposition of thin amorphous films.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; May-Aug. 1990; vol.36, no.3-4, p.175-82
Publisher: India : 1990
Doc. Type: Article
Copyright: �2004 IEE

Title: Measurement of minority carrier lifetime of solar cells using surface voltage and current transients.
Author: VISHNOI, A; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; April 1990; vol.33, no.4, p.411-17
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Modified lumped series resistance model of solar cells under shadow conditions.
Author: SHARMA, AK; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; March 1990; vol.33, no.3, p.309-12
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Combined effect of non-uniform illumination and surface resistance on the performance of a solar cell.
Author: VISHNOI, A; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: International Journal of Electronics; May 1989; vol.66, no.5, p.755-74
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Studies of surface voltage and current transients in solar cells for accurate evaluation of minority carrier lifetime.
Author: VISHNOI, A; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1989; vol.32, no.1, p.17-24
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Theoretical investigations of experimentally-observed open-circuit voltage-decay (OCVD) curves.
Author: GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electronics Engng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Nov. 1983; vol.26, no.11, p.1101-9
Publisher: UK : 1983
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Sintered cadmium sulphide photo-voltaic cell.
Author: Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; March 1979; vol.25, no.3, p.70-2
Publisher: India : 1979
Doc. Type: Article
Copyright: �2004 IEE