ITBHU.org: EcE: Introduction

P-Chakrabarti P Chakrabarti

P Chakrabarti received the B.Tech. and M.Tech. degrees in radio physics and electronics from the University of Calcutta, India, in 1981 and 1983, respectively, and the Ph.D. degree in electronics engineering from the Institute of Technology, Banaras Hindu University, Varanasi, India, in 1988. For a brief period, he worked as a faculty member in the Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani, India. He joined the Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, India, in 1986 as an Assistant Professor and became Associate Professor in the same department in 1988. Currently, he is working as a Professor in the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University. Since 1984, he has been actively engaged in research in the area of semiconductor devices in general, and particularly optoelectronic devices. He has published over 50 research papers in international journals and has presented research papers at various international conferences in India and abroad. He has also worked as a principal investigator in many sponsored projects. His current area of interest includes theoretical modeling and simulation of semiconductor devices for high speed and integrated optoelectronic applications. Dr. Chakrabarti is a recipient of the Indian National Science Academy (INSA) Visiting Fellowship during the year 1993-1994 and the Science and Engineering Research Council (SERC) Visiting Fellowship, Government of India, during the year 1994-1995. He is a lifetime member of the Indian Society for Technical Education and the Institution of Engineers (India), and also a Fellow of Optical Society of India.

Selected Research Publications


1. EFFECT OF ILLUMINATION ON THE CHARACTERISTICS OF A PROPOSED HETERO-MIS DIODE CHAKRABARTI, P; ABRAHAM, BR; DHINGRA, A; DAS, A; SHARAN, BS; MAHESHWARI, V Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; MAR 1992; v.39, no.3, p.507-514
2. MITATT MODE IN DDR HETEROSTRUCTURE IMPATT KHAN, RU; CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.303-309
3. A NEW INFRARED AVALANCHE PHOTODIODE FOR LONG-DISTANCE FIBER OPTIC COMMUNICATION CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1988; v.31, no.1, p.1-3
4. NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4, p.331-334
5. A LONG WAVELENGTH AVALANCHE PHOTODETECTOR FOR OPTICAL COMMUNICATIONS CHAKRABARTI, P; ABRAHAM, BR; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.7, p.521-524
6. OPTICAL CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.7, p.675-679
7. THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE PAL, BB; CHAKRABARTI, P Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3, p.173-177
8. EFFECT OF OPTICAL RADIATION IN A PHOTO-DOVATT CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.311-315
9. EFFECT OF ILLUMINATION ON THE CAPACITANCE OF A PROPOSED MIS DIODE CHAKRABARTI, P; ABRAHAM, BR; DAS, A; SHARAN, BS; MAHESHWARI, V Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; DEC 16 1991; v.128, no.2, p.513-520
10. NOISE CHARACTERISTICS OF A NEW HETEROJUNCTION AVALANCHE PHOTODIODE CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB Source: IEE PROCEEDINGS-J OPTOELECTRONICS ; 1990; v.137, no.2, p.97-100
11. LARGE-SIGNAL BEHAVIOR OF DOUBLE-AVALANCHE-REGION IMPATT DIODES CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.2, p.147-153
12. EFFECT OF INTENSITY-MODULATED OPTICAL RADIATION ON THE DC CHARACTERISTICS OF GAAS-MESFETS CHAKRABARTI, P; MISHRA, BK; AGRAWALLA, SK Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; MAY 16 1994; v.143, no.1, p.169-178
13. THEORY OF THE MM WAVE IMPATT DIODE - A REVIEW PAL, BB; KHAN, RU; CHAKRABARTI, P Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS ; JAN-FEB 1994; v.40, no.1, p.35-42
14. EFFECT OF INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD PAL, BB; CHAKRABARTI, P Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1987; v.134, no.4, p.C 231-C 231
15. COMPUTER-SIMULATION OF ION-IMPLANTED DAR IMPATT AROUND 94-GHZ UNDER STEADY-STATE CONDITION CHAKRABARTI, P; PAL, BB Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 1986; v.94, no.1, p.305-313 Conference:


16. OPTICAL EFFECTS IN MODULATION-DOPED-FIELD-EFFECT-TRANSISTOR SINGHAL, A; MISHRA, A; CHAKRABARTI, P Source: SOLID-STATE ELECTRONICS ; 1990; v.33, no.9, p.1214-1216
17. EFFECT OF ILLUMINATION ON THE CHARACTERISTICS OF A PROPOSED HETERO-MIS DIODE CHAKRABARTI, P; ABRAHAM, BR; DHINGRA, A; DAS, A; SHARAN, BS; MAHESHWARI, V Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; MAR 1992; v.39, no.3, p.507-514
18. A LONG WAVELENGTH AVALANCHE PHOTODETECTOR FOR OPTICAL COMMUNICATIONS CHAKRABARTI, P; ABRAHAM, BR; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.7, p.521-524
19. EFFECT OF ILLUMINATION ON THE CAPACITANCE OF A PROPOSED MIS DIODE CHAKRABARTI, P; ABRAHAM, BR; DAS, A; SHARAN, BS; MAHESHWARI, V Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; DEC 16 1991; v.128, no.2, p.513-520
20. OPTICALLY CONTROLLED CHARACTERISTICS OF TEGFET CHAKRABARTI, P; PURI, M; SINGHAL, A; MISHRA, A Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 1990; v.122, no.1, p.405-412


21. AN IMPROVED MODEL OF ION-IMPLANTED GAAS OPFET CHAKRABARTI, P; SHRESTHA, NL; SRIVASTAVA, S; KHEMKA, V Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; SEP 1992; v.39, no.9, p.2050-2059
22. Numerical simulation of an ion-implanted GaAs OPFET Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; OCT 1998; v.46, no.10, pt.1, p.1360-1366
23. An analytical model of GaAs OPFET Chakrabarti, P; Gupta, A; Khan, NA Source: SOLID-STATE ELECTRONICS; OCT 1996; v.39, no.10, p.1481-1490
24. Novel velocity electric field relation for modelling of compound semiconductor field-effect transistors Madheswaran, M; Madhavan, A; Chakrabarti, P Source: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS; JUN 1998; v.145, no.3, p.170-174
25. Intensity modulated photoeffects in InP-MIS capacitors Madheswaran, M; Chakrabarti, P Source: IEE PROCEEDINGS-OPTOELECTRONICS; AUG 1996; v.143, no.4, p.248-251
26. Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector Madheswaran, M; Rajamani, V; Chakrabarti, P Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS; AUG 20 2000; v.26, no.4, p.247-254
27. Noise analysis of InP/InGaAs superlaftice avalanche photodiode Rajamani, V; Madheswaran, M; Chakrabarti, P Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.215-220
28. Numerical simulation for estimating the optically controlled characteristics of an ion-implanted Si-MESFET Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA; Rajamani, V Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.205-214
29. Frequency dependent characteristics of an optically controlled InP MIS capacitor Madheswaran, M; Chakrabarti, P Source: SOLID-STATE ELECTRONICS; MAY 1998; v.42, no.5, p.795-801
30. Large signal model of an optically controlled GaAs IMPATT diode Akhtar, MJ; Madheswaran, M; Chakrabarti, P Source: IETE JOURNAL OF RESEARCH; JUL-AUG 1997; v.43, no.4, p.319-325
31. SPICE-compatible microwave model of an optically controlled high electron mobility transistor Chakrabarti, P; Mishra, BK; Madheswaran, M Source: INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING; NOV 1996; v.6, no.6, p.399-410
32. Effect of surface states on the electrical and optical characteristics of InP MIS capacitor Chakrabarti, P; Madheswaran, M; Mishra, BK; Singatwaria, S; Tandon, A; Ghosh, B Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH; JUN 16 1996; v.155, no.2, p.389-398


33. INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODE BATRA, S; LAHIRI, A; CHAKRABARTI, P Source: ELECTRONICS LETTERS ; 1988; v.24, no.15, p.964-965
34. Effect of ionizing radiation on MOS capacitors Chauhan, RK; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; MAR 2002; v.33, no.3, p.197-203
35. A proposed OEIC receiver using MESFET photodetector Chakrabarti, P; Rajamani, V Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; APR 1999; v.17, no.4, p.659-668
36. Noise performance of an InP/InGaAs superlattice avalanche photodiode Rajamani, V; Chakrabarti, P Source: OPTICAL AND QUANTUM ELECTRONICS; JAN 1999; v.31, no.1, p.69-76
37. INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODE - REPLY BATRA, S; LAHIRI, A; CHAKRABARTI, P Source: ELECTRONICS LETTERS ; 1988; v.24, no.22, p.1399-1400
38. A proposed ultra low-noise optical receiver for 1.55 mu m applications Rajamani, V; Chakrabarti, P Source: OPTICAL AND QUANTUM ELECTRONICS; FEB 2003; v.35, no.3, p.195-209
39. A pseudo-two-dimensional model of an n-channel MOSFET under the influence of ionizing radiation Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; SEP 2002; v.17, no.9, p.961-968
40. Influence of ionizing radiation on the performance of MIS solar cells: a theoretical model Chauhan, RK; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; JUL 2002; v.89, no.7, p.525-535
41. Ionizing radiation-induced effects in an ion-implanted MOSFET: a two-dimensional analytical model Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; APR 2002; v.89, no.4, p.277-288
42. Influence of ionising radiation on the performance of CMOS inverter Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; JUL 2001; v.32, no.7, p.615-620
43. Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector Madheswaran, M; Rajamani, V; Chakrabarti, P Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS; AUG 20 2000; v.26, no.4, p.247-254
44. Noise analysis of InP/InGaAs superlaftice avalanche photodiode Rajamani, V; Madheswaran, M; Chakrabarti, P Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.215-220
45. Numerical simulation for estimating the optically controlled characteristics of an ion-implanted Si-MESFET Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA; Rajamani, V Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.205-214


46. EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET CHAKRABARTI, P Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1991; v.38, no.11, p.2578-2578
47. OPTICALLY CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED SILICON MESFET - COMMENT CHAKRABARTI, P Source: SOLID-STATE ELECTRONICS ; 1991; v.34, no.10, p.1185-1185


48. Effect of ionising radiation on the characteristics of a MOSFET Dasgupta, S; Chakrabarti, P Source: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS; APR 2000; v.147, no.2, p.133-138
49. A pseudo-two-dimensional model of an n-channel MOSFET under the influence of ionizing radiation Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; SEP 2002; v.17, no.9, p.961-968
50. Ionizing radiation-induced effects in an ion-implanted MOSFET: a two-dimensional analytical model Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; APR 2002; v.89, no.4, p.277-288
51. Influence of ionising radiation on the performance of CMOS inverter Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; JUL 2001; v.32, no.7, p.615-620
52. Semi-numerical modelling of an n-channel irradiated MOSFET Dasgupta, S; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; MAR 2001; v.88, no.3, p.301-313
53. NUMERICAL-MODEL OF A PROPOSED DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FOR MIDINFRARED APPLICATIONS CHAKRABARTI, P; SAXENA, V; DAS, SK; RAO, YS; LAL, BB Source: OPTICAL AND QUANTUM ELECTRONICS ; AUG 1994; v.26, no.8, p.885-897
54. OPTICALLY CONTROLLED CHARACTERISTICS OF A NEW HETEROJUNCTION FIELD-EFFECT TRANSISTOR CHAKRABARTI, P; PAL, J Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; FEB 1992; v.54, no.2, p.186-190
55. CHARGE-SHEET MODEL OF A PROPOSED MISFET PHOTODETECTOR CHAKRABARTI, P; GOPAL, IV Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; DEC 16 1991; v.128, no.2, p.521-530


56. Effect of ionizing radiation on MOS capacitors Chauhan, RK; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; MAR 2002; v.33, no.3, p.197-203
57. Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE Chakrabarti, P; Krier, A; Morgan, AF Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; OCT 2003; v.50, no.10, p.2049-2058
58. Double-heterojunction photodetector for midinfrared applications: theoretical model and experimental results Chakrabarti, P; Krier, A; Morgan, AF Source: OPTICAL ENGINEERING; SEP 2003; v.42, no.9, p.2614-2623
59. Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor Chakrabarti, P; Agrawal, NK; Kalra, P; Agrawal, S; Gupta, G Source: OPTICAL ENGINEERING; APR 2003; v.42, no.4, p.939-947
60. Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies Chakrabarti, P; Tiwari, BN; Kumar, S Source: OPTICAL ENGINEERING; FEB 2003; v.42, no.2, p.447-455
61. A pseudo-two-dimensional model of an n-channel MOSFET under the influence of ionizing radiation Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; SEP 2002; v.17, no.9, p.961-968
62. Influence of ionizing radiation on the performance of MIS solar cells: a theoretical model Chauhan, RK; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; JUL 2002; v.89, no.7, p.525-535
63. Noise modeling of an optically controlled MESFET (OPFET) Chakrabarti, P; Jha, V; Kalra, P; Gupta, G Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS; APR 20 2002; v.33, no.2, p.79-83
64. Ionizing radiation-induced effects in an ion-implanted MOSFET: a two-dimensional analytical model Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; APR 2002; v.89, no.4, p.277-288
65. Influence of ionising radiation on the performance of CMOS inverter Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; JUL 2001; v.32, no.7, p.615-620


66. MICROWAVE MODEL OF AN OPTICALLY CONTROLLED GAAS-MESFET CHAKRABARTI, P; MISHRA, BK; KUMAR, KS; SHRESTHA, SK Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS ; APR 20 1995; v.8, no.6, p.296-300
67. OPTICALLY CONTROLLED CHARACTERISTICS OF AN INGAAS MISFET CHAKRABARTI, P; MISHRA, BK; REDDY, YP; PRAKASH, S Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; JAN 16 1995; v.147, no.1, p.277-291
68. OPTICALLY CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED HETERO-MIS CAPACITOR CHAKRABARTI, P; CHANDRA, A; GUPTA, V; SHAH, HS; KUMAR, YR Source: IEE PROCEEDINGS-OPTOELECTRONICS ; FEB 1994; v.141, no.1, p.27-32
69. NUMERICAL-SIMULATION FOR ESTIMATING C-V CHARACTERISTICS OF MODFETS UNDER ILLUMINATION CHAKRABARTI, P; KUMAR, T; KUMAR, A; PRASAD, BRN Source: SOLID-STATE ELECTRONICS ; FEB 1992; v.35, no.2, p.225-227


70. IV CHARACTERISTICS OF AN OPTICALLY CONTROLLED SI-MESFET CHAKRABARTI, P; ANAND, R; RAO, VS Source: SOLID-STATE ELECTRONICS ; APR 1992; v.35, no.4, p.587-592

Other Publications

Title: Noise behavior of an optically controlled GaAs MESFET.
Author: Chakrabarti, P; Tiwari, BN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Def Avion Res Estab, Bangalore 560075, Karnataka, India; Def Avion Res Estab, Bangalore 560075, Karnataka, India; Banaras Hindu Univ, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; Feb. 2004; vol.22, no.2, p.534-42
Publisher: USA : IEEE, 2004
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Theoretical analysis of a proposed InAs/InAsSb heterojunction photodetector for mid-infrared (MIR) applications.
Author: Lal, RK; Jain, M; Gupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEE Proceedings-Optoelectronics; 12 Dec. 2003; vol.150, no.6, p.527-33
Publisher: UK : IEE, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Analysis and simulation of a mid-infrared P{sup +}-InAs{sub 0.55}Sb{sub 0.15}P{sub 0.30}/n{sup 0}-InAs{sub 0.89}Sb{sub 0.}$ d1{sub 1}/N{sup +}-InAs{sub 0.55}Sb{sub 0.15}P{sub 0.30} double heterojunction photodetector grown by LPE.
Author: Chakrabarti, P.; Krier, A.; Morgan, AF
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: IEEE Transactions on Electron Devices; Oct. 2003; vol.50, no.10, p.2049-58
Publisher: USA : IEEE, 2003
Doc. Type: Article
Copyright: �2004 IEE

Title: Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE
Author: Chakrabarti, P; Krier, A; Morgan, AF
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; OCT 2003; v.50, no.10, p.2049-2058
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: An analytical model of a double-hetero structure mid-infrared photodetector.
Author: Lal, R; Jain, M; Gupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Infrared Physics & Technology; April 2003; vol.44, no.2, p.125-32
Publisher: Netherlands : Elsevier, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor.
Author: Chakrabarti, P; Agrawal, NK; Kalra, P; Agrawal, S; Gupta, G
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Inst. of Technol., India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India
Source: Optical Engineering; April 2003; vol.42, no.4, p.939-47
Publisher: USA : SPIE, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A proposed ultra low-noise optical receiver for 1.55 mu m applications.
Author: Rajamani, V; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Optical and Quantum Electronics; Feb. 2003; vol.35, no.3, p.195-209
Publisher: Netherlands : Kluwer Academic Publishers, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise analysis of an optically controlled metal semiconductor field effect transistor at microwave frequencies.
Author: Chakrabarti, P; Tiwari, BN; Kumar, S
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India
Source: Optical Engineering; Feb. 2003; vol.42, no.2, p.447-55
Publisher: USA : SPIE, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optical and electrical characterisation of an p{sup +}-InAs{sub 0.96}Sb{sub 0.04}/n{sup 0}-InAs{sub 0.96}Sb{sub 0.04}/n{sup +}-In As photodetector for mid-infrared application.
Author: Chakrabarti, P.; Krier, A.; Huang, XL; Fenge, P.; Lal, RK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil; p.87-92 vol.1
Conference: 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil
Editor: Kalinowski, HJ; Romero, MA; Barbin, SE
Publisher: Piscataway, NJ, USA : IEEE, 2003
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: A pseudo-two-dimensional model of an n-channel MOSFET under the influence of ionizing radiation.
Author: Chauhan, RK; Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India
Source: Semiconductor Science and Technology; Sept. 2002; vol.17, no.9, p.961-8
Publisher: UK : IOP Publishing, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Influence of ionizing radiation on the performance of MIS solar cells: a theoretical model.
Author: Chauhan, RK; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: International Journal of Electronics; July 2002; vol.89, no.7, p.525-35
Publisher: UK : Taylor & Francis, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise modeling of an optically controlled MESFET (OPFET).
Author: Chakrabarti, P; Jha, V; Kalra, P; Gupta, G
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Microwave and Optical Technology Letters; 20 April 2002; vol.33, no.2, p.79-83
Publisher: USA : Wiley, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Ionizing radiation-induced effects in an ion-implanted MOSFET: a two-dimensional analytical model.
Author: Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: International Journal of Electronics; April 2002; vol.89, no.4, p.277-88
Publisher: UK : Taylor & Francis, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of ionizing radiation on MOS capacitors.
Author: Chauhan, RK; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Microelectronics Journal; March 2002; vol.33, no.3, p.197-203
Publisher: UK : Elsevier, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Theoretical analysis of an InAs/InAsSb heterojunction photodetector for mid-infrared (MIR) applications.
Author: Chakrabarti, P.; Lal, RK; Jain, M.; Gupta, S.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Eleventh International Workshop on the Physics of Semiconductor Devices, 11-15 Dec. 2001, Delhi, India; p.1064-8 vol.2
Conference: Eleventh International Workshop on the Physics of Semiconductor Devices, 11-15 Dec. 2001, Delhi, India
Editor: Kumar, V.; Basu, PK
Publisher: Washington, DC, USA : SPIE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Theoretical analysis of room temperature InAs{sub 0.89}Sb{sub 0.11} mid-infrared (MIR) photodetector for CO detection.
Author: Chakrabarti, P.; Lal, RK; Jain, M.; Gupta, S.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: 23rd International Conference on Microelectronics (MIEL 2002), 12-15 May 2002, Nis, Yugoslavia; p.331-4 vol.1
Conference: 23rd International Conference on Microelectronics (MIEL 2002), 12-15 May 2002, Nis, Yugoslavia
Publisher: Piscataway, NJ, USA : IEEE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Influence of ionising radiation on the performance of CMOS inverter.
Author: Chauhan, RK; Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Microelectronics Journal; July 2001; vol.32, no.7, p.615-20
Publisher: UK : Elsevier, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Semi-numerical modelling of an n-channel irradiated MOSFET.
Author: Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: International Journal of Electronics; March 2001; vol.88, no.3, p.301-13
Publisher: UK : Taylor & Francis, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector.
Author: Madheswaran, M; Rajamani, V; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Microwave and Optical Technology Letters; 20 Aug. 2000; vol.26, no.4, p.247-54
Publisher: USA : Wiley, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise analysis of InP/InGaAs superlattice avalanche photodiode.
Author: Rajamani, V; Madheswaran, M; Chakrabarti, P
Affiliation: Dept. of Electron. & Commun. Eng., Mohamed Sathak Eng. Coll., Kilakkari, India
Institution: Mohamed Sathak Engn Coll, Dept Elect & Commun Engn, Kilakkari 623806, India; Mohamed Sathak Engn Coll, Dept Elect & Commun Engn, Kilakkari 623806, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IETE Journal of Research; July-Aug. 2000; vol.46, no.4, p.215-20
Publisher: India : Instn. Electron. & Telecommun. Eng, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Numerical simulation for estimating the optically controlled characteristics of an ion-implanted Si-MESFET.
Author: Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA; Rajamani, V
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Mohamed Sathak Engn Coll, Dept Elect & Commun Engn, Kilakkari 623806, India
Source: IETE Journal of Research; July-Aug. 2000; vol.46, no.4, p.205-14
Publisher: India : Instn. Electron. & Telecommun. Eng, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of ionising radiation on the characteristics of a MOSFET.
Author: Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEE Proceedings-Circuits, Devices and Systems; April 2000; vol.147, no.2, p.133-8
Publisher: UK : IEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A proposed OEIC receiver using MESFET photodetector.
Author: Chakrabarti, P; Rajamani, V
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; April 1999; vol.17, no.4, p.659-68
Publisher: USA : IEEE, 1999
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise performance of an InP/lnGaAs superlattice avalanche photodiode.
Author: Rajamani, V.; Chakrabarti, P.
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Optical and Quantum Electronics; Jan. 1999; vol.31, no.1, p.69-76
Publisher: Netherlands : Kluwer Academic Publishers, 1999
Doc. Type: Article
Copyright: �2004 IEE

Title: Noise performance of an InP/InGaAs superlattice avalanche photodiode
Author: Rajamani, V; Chakrabarti, P
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: OPTICAL AND QUANTUM ELECTRONICS; JAN 1999; v.31, no.1, p.69-76
Publisher: KLUWER ACADEMIC PUBL
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Numerical simulation of an ion-implanted GaAs OPFET.
Author: Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Mohamed Sathak Engn Coll, Dept Elect & Commun Engn, Karaikkudi 623806, Tamil Nadu, India; Hindalco, Renukoot 231217, India; Birla Horizon, Noida 201305, India
Source: IEEE Transactions on Microwave Theory and Techniques; Oct. 1998; vol.46, no.10, pt.1, p.1360-6
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Novel velocity-electric field relation for modelling of compound semiconductor field-effect transistors.
Author: Madheswaran, M; Madhavan, A; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEE Proceedings-Circuits, Devices and Systems; June 1998; vol.145, no.3, p.170-4
Publisher: UK : IEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Frequency dependent characteristics of an optically controlled InP MIS capacitor.
Author: Madheswaran, M; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Solid-State Electronics; May 1998; vol.42, no.5, p.795-801
Publisher: UK : Elsevier, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A low-noise photodetector for MIR application.
Author: Rajamani, V.; Madheswaran, M.; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Communications in Instrumentation; Oct.-Dec. 1997; vol.5, no.4, p.233-44
Publisher: India : Central Sci. Instrum Organ, 1997
Doc. Type: Article
Copyright: �2004 IEE

Title: Large signal model of an optically controlled GaAs IMPATT diode
Author: Akhtar, MJ; Madheswaran, M; Chakrabarti, P
Institution: Cent Elect Engn Res Inst, Microwave Tubes Area, Pilani 333031, Rajasthan, India; Cent Elect Engn Res Inst, Microwave Tubes Area, Pilani 333031, Rajasthan, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IETE JOURNAL OF RESEARCH; JUL-AUG 1997; v.43, no.4, p.319-325
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: A proposed velocity-electric field relationship for modeling compound semiconductor devices.
Author: Chakrabarti, P.; Madheswaran, M.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: 1997 21st International Conference on Microelectronics. Proceedings, 14-17 Sept. 1997, Nis, Yugoslavia; p.173-6 vol.1
Conference: 1997 21st International Conference on Microelectronics. Proceedings, 14-17 Sept. 1997, Nis, Yugoslavia
Publisher: New York, NY, USA : IEEE, 1997
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: SPICE-compatible microwave model of an optically controlled high electron mobility transistor.
Author: Chakrabarti, P; Mishra, BK; Madheswaran, M
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, CTR ADV STUDY, VARANASI 221005, UTTAR PRADESH, INDIA
Source: International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering; Nov. 1996; vol.6, no.6, p.399-410
Publisher: UK : Wiley, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: An analytical model of GaAs OPFET.
Author: Chakrabarti, P; Gupta, A; Khan, NA
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; BIRLA INST TECHNOL, DEPT ELECT & ELECT ENGN, RANCHI 835215, BIHAR, INDIA
Source: Solid-State Electronics; Oct. 1996; vol.39, no.10, p.1481-90
Publisher: UK : Elsevier, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Intensity modulated photoeffects in InP-MIS capacitors.
Author: Madheswaran, M; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings-Optoelectronics; Aug. 1996; vol.143, no.4, p.248-51
Publisher: UK : IEE, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of surface states on the electrical and optical characteristics of InP MIS capacitor.
Author: Chakrabarti, P; Madheswaran, M; Mishra, BK; Singatwaria, S; Tandon, A; Ghosh, B
Affiliation: Dept. of Electr. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 June 1996; vol.155, no.2, p.389-98
Publisher: Germany : Akademie Verlag, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Frequency response of time-varying photocapacitance of an InP:Fe MIS capacitor.
Author: Chakrabarti, P.; Madheswaran, M.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: International Topical Meeting on Microwave Photonics, 3-5 Dec. 1996, Kyoto, Japan; p.133-6
Conference: International Topical Meeting on Microwave Photonics, 3-5 Dec. 1996, Kyoto, Japan
Publisher: New York, NY, USA : IEEE, 1996
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: An InP:Fe photocapacitive MIS detector.
Author: Madheswaran, M.; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: 1996 Asia-Pacific Microwave Conference (APMC'96), 17-20 Dec. 1996, New Delhi, India; p.884-7 vol.3
Conference: 1996 Asia-Pacific Microwave Conference (APMC'96), 17-20 Dec. 1996, New Delhi, India
Editor: Gupta, RS
Publisher: New Delhi, India : R.S. Gupta, Univ. Delhi South Campus, 1996
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Fabrication and characterization of an optically controlled MOS capacitor.
Author: Chakrabarti, P.; Madheswaran, M.; Lahiri, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.238-40
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Microwave model of an optically controlled GaAs MESFET.
Author: CHAKRABARTI, P; MISHRA, BK; KUMAR, KS; SHRESTHA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Microwave and Optical Technology Letters; 20 April 1995; vol.8, no.6, p.296-300
Publisher: USA : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optically controlled characteristics of an InGaAs MISFET.
Author: CHAKRABARTI, P; MISHRA, BK; REDDY, YP; PRAKASH, S
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 Jan. 1995; vol.147, no.1, p.277-91
Publisher: Germany : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: An optically controlled InP MIS capacitor.
Author: MISHRA, BK; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1995; vol.38, no.1, p.255-7
Publisher: UK : 1995
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Theory of the MM wave IMPATT diode: A review.
Author: PAL, BB; KHAN, RU; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan.-Feb. 1994; vol.40, no.1, p.35-42
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optically controlled characteristics of an InP-MISFET.
Author: Chakrabarti, P.; Mishra, BK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: APSYM - CUSAT - 94. National Symposium on Antennas and Propagation, 17-19 Jan. 1994, Kochin, India; p.240-3
Conference: APSYM - CUSAT - 94. National Symposium on Antennas and Propagation, 17-19 Jan. 1994, Kochin, India
Editor: Nair, KG; Sridhar, CS
Publisher: Cochin, India : Cochin Univ. Sci. & Technol, 1994
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: An optically controlled MOS capacitor.
Author: Chakrabarti, P.; Gupta, N.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: APSYM - CUSAT - 94. National Symposium on Antennas and Propagation, 17-19 Jan. 1994, Kochin, India; p.236-9
Conference: APSYM - CUSAT - 94. National Symposium on Antennas and Propagation, 17-19 Jan. 1994, Kochin, India
Editor: Nair, KG; Sridhar, CS
Publisher: Cochin, India : Cochin Univ. Sci. & Technol, 1994
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Noise characteristics of a new heterojunction avalanche photodiode.
Author: CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2, p.97-100
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A long wavelength avalanche photodetector for optical communications.
Author: CHAKRABARTI, P; ABRAHAM, BR; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1989; vol.32, no.7, p.521-4
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4, p.331-334
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: A new infrared avalanche photodiode for long distance fiber optic communication.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1988; vol.31, no.1, p.1-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optical characteristics of a superlattice avalanche photodiode.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1987; vol.30, no.7, p.675-9
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of optical radiation in a photo-DOVATT.
Author: Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42, no.4, p.311-15
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: MITATT mode in DDR heterostructure Impatt.
Author: Khan, RU; Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42, no.4, p.303-9
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Theoretical characterisation of a superlattice avalanche photodiode.
Author: Pal, BB; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); March 1987; vol.A42, no.3, p.173-7
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Large-signal behaviour of double-avalanche-region IMPATT diodes.
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Feb. 1987; vol.30, no.2, p.147-54
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: EFFECT OF INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, FAC TOXICOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; APR 1987; v.134, no.4, p.C231-C231
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.

Title: MITATT MODE IN DDR HETEROSTRUCTURE IMPATT
Author: KHAN, RU; CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.303-309
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: EFFECT OF OPTICAL RADIATION IN A PHOTO-DOVATT
Author: CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.311-315
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3, p.173-177
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: A new solid-state device as a source of power in mm wave.
Author: Pal, BB; Khan, RU; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept.-Oct. 1986; vol.32, no.5, p.397-402
Publisher: India : 1986
Doc. Type: Article
Copyright: �2004 IEE

Title: Computer simulation of ion-implanted DAR Impatt around 94 GHz under steady state condition.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 March 1986; vol.94, no.1, p.305-13
Conference: Working Meeting on Ion Implantation in Semiconductors and Other Materials and Ion Beam Devices, 13-18 Oct. 1985, Balatonaliga, Hungary
Publisher: East Germany : 1986
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: EFFECT OF SUPPLEMENTATION WITH EXOGENOUS FATTY-ACID ON THE BIOLOGICAL PROPERTIES OF A FATTY-ACID REQUIRING AUXOTROPH OF SALMONELLA-TYPHIMURIUM
Author: DEB, JK; BISWAS, SK; CHAKRABARTI, P; CHAKRAVORTY, M
Institution: BOSE INST, DEPT CHEM, CALCUTTA 700009, W BENGAL, INDIA; BANARAS HINDU UNIV, INST MED SCI, DEPT BIOCHEM, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF BIOSCIENCES; SEP 1986; v.10, no.3, p.335-349
Publisher: INDIAN ACADEMY SCIENCES
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Search for placer gold in eastern India - A geomorphological approach
Author: Chakrabarti, P
Institution: STATE REMOTE SENSING APPLICAT CTR, DEPT SCI & TECHNOL, CALCUTTA 700091, W BENGAL, INDIA
Source: JOURNAL OF THE GEOLOGICAL SOCIETY OF INDIA; JAN 1996; v.47, no.1, p.99-105
Publisher: GEOLOGICAL SOC INDIA
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: NUMERICAL-MODEL OF A PROPOSED DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FOR MIDINFRARED APPLICATIONS
Author: CHAKRABARTI, P; SAXENA, V; DAS, SK; RAO, YS; LAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: OPTICAL AND QUANTUM ELECTRONICS; AUG 1994; v.26, no.8, p.885-897
Publisher: CHAPMAN HALL LTD
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Numerical model of a proposed double heterostructure light-emitting diode for mid-infrared applications.
Author: Chakrabarti, P.; Saxena, V.; Das, SK; Rao, YS; Balaji Lal, B.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Source: Optical and Quantum Electronics; Aug. 1994; vol.26, no.8, p.885-97
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of intensity-modulated optical radiation on the DC characteristics of GaAs MESFETs.
Author: CHAKRABARTI, P; MISHRA, BK; AGRAWALLA, SK
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 May 1994; vol.143, no.1, p.169-78
Publisher: Germany : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Switching characteristics of an optically controlled GaAs-MESFET.
Author: CHAKRABARTI, P; SHRESTHA, SK; SRIVASTAVA, A; SAXENA, D
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: IEEE Transactions on Microwave Theory and Techniques; March 1994; vol.42, no.3, p.365-75
Publisher: USA : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optically controlled characteristics of an ion-implanted hetero-MIS capacitor.
Author: CHAKRABARTI, P; CHANDRA, A; GUPTA, V; SHAH, HS; KUMAR, YR
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: IEE Proceedings-Optoelectronics; Feb. 1994; vol.141, no.1, p.27-32
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Microwave characterization of an optically controlled high electron mobility transistor.
Author: Mishra, BK; Pradeep, V.; Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Nov.-Dec. 1993; vol.39, no.6, p.361-73
Publisher: India : 1993
Doc. Type: Article
Copyright: �2004 IEE

Title: An improved model of ion-implanted GaAs OPFET.
Author: CHAKRABARTI, P; SHRESTHA, NL; SRIVASTAVA, S; KHEMKA, V
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: IEEE Transactions on Electron Devices; Sept. 1992; vol.39, no.9, p.2050-9
Publisher: USA : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: I-V characteristics of an optically controlled Si-MESFET.
Author: CHAKRABARTI, P; ANAND, R; RAO, VS
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Solid-State Electronics; April 1992; vol.35, no.4, p.587-92
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Computer aided modelling of high-electron-mobility-phototransistor.
Author: Pal, J.; Puri, M.; Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. & Commun. Eng., Biria Inst. of Technol., Ranchi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; March-June 1992; vol.38, no.2-3, p.143-6
Publisher: India : 1992
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of illumination on the characteristics of a proposed hetero-MIS diode.
Author: CHAKRABARTI, P; ABRAHAM, BR; DHINGRA, A; DAS, A; SHARAN, BS; MAHESHWARI, V
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; VASVI COLL ENGN, DEPT ELECTR & COMMUN ENGN, HYDERABAD, INDIA; TATA CONSULTANCY SERV, BOMBAY, INDIA; DREXEL UNIV, DEPT ELECT ENGN, PHILADELPHIA, PA 19104
Source: IEEE Transactions on Electron Devices; March 1992; vol.39, no.3, p.507-14
Publisher: USA : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: OPTICALLY CONTROLLED CHARACTERISTICS OF A NEW HETEROJUNCTION FIELD-EFFECT TRANSISTOR
Author: CHAKRABARTI, P; PAL, J
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; FEB 1992; v.54, no.2, p.186-190
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Numerical simulation for estimating C-V characteristics of MODFETs under illumination.
Author: CHAKRABARTI, P; KUMAR, T; KUMAR, A; PRASAD, BRN
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Solid-State Electronics; Feb. 1992; vol.35, no.2, p.225-7
Publisher: UK : 1992
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optically controlled characteristics of a new heterojunction field effect transistor.
Author: Chakrabarti, P.; Pal, J.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Source: Applied Physics A (Solids and Surfaces); Feb. 1992; vol.A54, no.2, p.186-90
Publisher: Germany : 1992
Doc. Type: Article
Copyright: �2004 IEE

Title: Charge-sheet model of a proposed MISFET photodetector.
Author: CHAKRABARTI, P; GOPAL, IV
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Mesra, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 Dec. 1991; vol.128, no.2, p.521-30
Publisher: Germany : 1991
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of illumination on the capacitance of a proposed MIS diode.
Author: CHAKRABARTI, P; ABRAHAM, BR; DAS, A; SHARAN, BS; MAHESHWARI, V
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Mesra, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 Dec. 1991; vol.128, no.2, p.513-20
Publisher: Germany : 1991
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Comment on 'Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET'.
Author: Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Source: IEEE Transactions on Electron Devices; Nov. 1991; vol.38, no.11, p.2578
Publisher: USA : 1991
Doc. Type: Article
Copyright: �2004 IEE

Title: Comment on 'Optically controlled characteristics of an ion-implanted silicon MESFET' by V.K. Singh et al.
Author: Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Source: Solid-State Electronics; Oct. 1991; vol.34, no.10, p.1185
Publisher: UK : 1991
Doc. Type: Article
Copyright: �2004 IEE

Title: EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET
Author: CHAKRABARTI, P
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; NOV 1991; v.38, no.11, p.2578-2578
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article; Letter
Copyright: �2004 Institute for Scientific Information, Inc.

Title: OPTICALLY CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED SILICON MESFET - COMMENT
Author: CHAKRABARTI, P
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUNICAT ENGN, RANCHI 835215, BIHAR, INDIA
Source: SOLID-STATE ELECTRONICS; OCT 1991; v.34, no.10, p.1185-1185
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Doc. Type: Article; Letter
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Optically controlled characteristics of TEGFET.
Author: CHAKRABARTI, P; PURI, M; SINGHAL, A; MISHRA, A
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 Nov. 1990; vol.122, no.1, p.405-12
Publisher: Germany : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optical effects in modulation-doped-field-effect-transistor.
Author: SINGHAL, A; MISHRA, A; CHAKRABARTI, P
Affiliation: Dept. of Electrons & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Solid-State Electronics; Sept. 1990; vol.33, no.9, p.1214-16
Publisher: UK : 1990
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise characteristics of a superlattice avalanche photodiode.
Author: Chakrabarti, P.; Choudhury, SC; Pal, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Source: Applied Physics A (Solids and Surfaces); April 1989; vol.A48, no.4, p.331-4
Publisher: West Germany : 1989
Doc. Type: Article
Copyright: �2004 IEE

Title: InP/Ga{sub 0.47}In{sub 0.53}As superlattice avalanche photodiode.
Author: Batra, S.; Lahiri, A.; Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Bina Inst. of Technol., Ranchi, India
Source: Electronics Letters; 21 July 1988; vol.24, no.15, p.964-5
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE

Title: INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODE - REPLY
Author: BATRA, S; LAHIRI, A; CHAKRABARTI, P
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: ELECTRONICS LETTERS; OCT 27 1988; v.24, no.22, p.1399-1400
Publisher: IEE-INST ELEC ENG
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: InP/Ga{sub 0.47}In{sub 0.53}As superlattice avalanche photodiode.
Author: BATRA, S; LAHIRI, A; CHAKRABARTI, P
Affiliation: Dept. of Electron. & Commun. Eng., Bina Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA
Source: Electronics Letters; 21 July 1988; vol.24, no.15, p.964-5
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

May 19, 2004 by Mukul Agrawal ECE00

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