B B Pal
B B Pal is a Professor with the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi, India. His name has been included in several Who's Who of the world. He is the Coordinator of the Special Manpower Development in VLSI Design sponsored by the Ministry of Information Technology, Government of India, and the Coordinator of the Center of Research in Microelectronics and Center of Advanced Studies in Microelectronics and Microwave Engineering. He has published more than 180 technical papers in journals and conference proceedings. His areas of interest are VLSI design, high speed and novel semiconductor devices, and optoelectronic devices. Prof. Pal received the Outstanding Man of the Twentieth Century certificate and the 2000 millennium medal of honor. He is a life member and founder of the Semiconductor Society of India, the Optical Society of India, and the Nikhil Bharat Bengali Literature Society.

Selected Research Publications

1. OPTICALLY CONTROLLED CHARACTERISTICS IN AN ION-IMPLANTED SILICON MESFET SINGH, VK; CHATTOPADHYAY, SN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1986; v.29, no.7, p.707-711

2. KINETICS OF OXIDATION OF ARSENIC(III) BY VANADIUMVV) PAL, BB; SENGUPTA, KK; MUKHERJE*, DC Source: JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY; 1972; v.34, no.11, p.3433-&

3. EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET MISHRA, S; SINGH, VK; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1990; v.37, no.1, p.2-10

4. KINETICS OF METAL-ION OXIDATION OF PHENYLPHOSPHONOUS ACID IN SOLUTION .1. OXIDATION BY VANADIUM(V) SENGUPTA, KK; CHAKLADA*, JK; PAL, BB; MUKHERJE*, DC Source: JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 2; 1973; no.7, p.926-929

5. COMPUTER-ANALYSIS OF DC FIELD AND CURRENT-DENSITY PROFILES OF DAR IMPATT DIODE DATTA, DN; PATI, SP; BANERJEE, JP; PAL, BB; ROY, SK Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1982; v.29, no.11, p.1813-1816

6. KINETICS OF OXIDATION OF ANTIMONY(III) BY VANADIUM(V) PAL, BB; SENGUPTA, KK Source: INORGANIC CHEMISTRY; 1975; v.14, no.9, p.2268-2271

7. GAAS OPFET CHARACTERISTICS CONSIDERING THE EFFECT OF GATE DEPLETION WITH MODULATION DUE TO INCIDENT RADIATION PAL, BB; CHATTOPADHYAY, SN Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; MAY 1992; v.39, no.5, p.1021-1027

8. KINETICS OF VANADIUM(V) OXIDATION OF PHOSPHORUS ACID SENGUPTA, KK; PAL, BB; MUKHERJE*, DC Source: JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS; 1974; no.2, p.226-229

9. THE EFFECT OF SURFACE RECOMBINATION ON THE FREQUENCY-DEPENDENT CHARACTERISTICS OF AN ION-IMPLANTED GAAS OPFET MISHRA, S; SINGH, VK; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1990; v.37, no.4, p.942-946

10. FREQUENCY-DEPENDENT CHARACTERISTICS IN AN ION-IMPLANTED PHOTO MESFET SINGH, VK; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.1, p.113-118

11. Optical effect in InAlAs/InGaAs/InP MODFET Mitra, H; Pal, BB; Singh, S; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; JAN 1998; v.45, no.1, p.68-77

12. SMALL-SIGNAL ANALYSIS OF AN IMPATT DEVICE HAVING 2 AVALANCHE LAYERS INTERSPACED BY A DRIFT LAYER SOM, B; PAL, BB; ROY, SK Source: SOLID-STATE ELECTRONICS; 1974; v.17, no.10, p.1029-1038

13. ANALYTICAL MODELING OF AN ION-IMPLANTED SILICON MESFET IN POST-ANNEAL CONDITION CHATTOPADHYAY, SN; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1989; v.36, no.1, p.81-87

14. OPTICALLY-CONTROLLED SWITCHING CHARACTERISTICS OF SILICON MESFETS SINGH, VK; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.3, p.267-272

15. MITATT MODE IN DDR HETEROSTRUCTURE IMPATT KHAN, RU; CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.303-309

16. Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate Shubha; Pal, BB; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; JAN 1998; v.45, no.1, p.78-84

17. PROXIMITY EXPOSURE COMPENSATION AND RESIST DEBRIS FORMATION IN ELECTRON-BEAM LITHOGRAPHY DESHMUKH, PR; SINGH, M; RANGRA, KJ; VYAS, PD; KHOKLE, WS; PAL, BB Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ; JAN-FEB 1992; v.10, no.1, p.179-182

18. A NEW INFRARED AVALANCHE PHOTODIODE FOR LONG-DISTANCE FIBER OPTIC COMMUNICATION CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1988; v.31, no.1, p.1-3

19. KINETICS OF OXIDATION OF HYPOPHOSPHOROUS ACID BY VANADIUM (V) SENGUPTA, KK; PAL, BB; MUKHERJE*, DC Source: ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT; 1970; v.72, no.4-6, p.230-&

20. ENHANCED OPTICAL EFFECT IN A HIGH ELECTRON-MOBILITY TRANSISTOR DEVICE PAL, BB; MITRA, H Source: OPTICAL ENGINEERING ; APR 1993; v.32, no.4, p.687-691

21. TIME-DEPENDENT ANALYSIS OF AN ION-IMPLANTED GAAS OPFET PAL, BB; CHATTOPADHYAY, SN; MISHRA, S; SINGH, S; KHAN, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; APR 1994; v.41, no.4, p.491-498

22. THE EFFECTS OF ANNEALING ON THE SWITCHING CHARACTERISTICS OF AN ION-IMPLANTED SILICON MESFET CHATTOPADHYAY, SN; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1989; v.36, no.5, p.920-929

23. ELECTRON IONIZATION RATE IN III-V TERNARY SEMICONDUCTORS SINGH, SR; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.2, p.105-109

24. OPTIMUM DESIGN OF A POTENTIALLY DISPERSION-FREE HELICAL SLOW-WAVE CIRCUIT OF A BROAD-BAND TWT BASU, BN; PAL, BB; SINGH, VN; VAIDYA, NC Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES ; 1984; v.32, no.4, p.461-463

25. Randomized controlled trial of intrasphincteric botulinum toxin A injection versus balloon dilatation in treatment of achalasia cardia Ghoshal, UC; Chaudhuri, S; Pal, BB; Dhar, K; Ray, G; Banerjee, PK Source: DISEASES OF THE ESOPHAGUS; 2001; v.14, no.3-4, p.227-231

26. ACCURATE MODELING OF AN ION-IMPLANTED MESFET CHATTOPADHYAY, SN; SINGH, VK; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.4, p.391-396

27. COMPOSITIONAL DEPENDENCE OF PERMITTIVITY IN QUARTERNARY III-V-SEMICONDUCTOR COMPOUNDS PAL, BB Source: SOLID-STATE ELECTRONICS ; 1985; v.28, no.12, p.1235-1239

28. IONIZATION RATES OF ELECTRONS AND HOLES IN GAAS CONSIDERING ELECTRON ELECTRON AND HOLE HOLE INTERACTIONS SINGH, SR; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1985; v.32, no.3, p.599-604

29. HIGH-FREQUENCY NOISE PROPERTIES OF A DOUBLE AVALANCHE REGION (DAR) IMPATT DIODE DATTA, DN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1980; v.23, no.4, p.377-382

30. DEPENDENCE OF READ DIODE CHARACTERISTICS ON CURRENT MULTIPLICATION FACTOR IN AVALANCHE ZONE ROY, SK; SOM, B; PAL, BB Source: PROCEEDINGS OF THE IEEE; 1975; v.63, no.7, p.1072-1073

31. NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4, p.331-334

32. A UNIFIED MODEL FOR MESFET ANALYSIS CHATTOPADHYAY, SN; PAL, BB Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 1988; v.3, no.3, p.185-190

33. EFFECT OF FINITE CURRENT MULTIPLICATION FACTOR IN AVALANCHE ZONE ON HIGH-FREQUENCY NOISE PROPERTIES OF READ DIODES PAL, BB; SOM, B; ROY, SK Source: PROCEEDINGS OF THE IEEE ; 1976; v.64, no.8, p.1252-1254

34. Analysis of GaAsOPFET with improved optical absorption under back illumination Roy, NS; Pal, BB; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 1999; v.46, no.12, p.2350-2353

35. OPTOELECTRONIC CHARGE-COUPLED-DEVICE (OECCD) USING INP MIS CAPACITOR ARRAY PAL, BB; NELSON, SS Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; OCT 1993; v.40, no.10, p.1878-1880

36. A LONG WAVELENGTH AVALANCHE PHOTODETECTOR FOR OPTICAL COMMUNICATIONS CHAKRABARTI, P; ABRAHAM, BR; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.7, p.521-524

37. OPTICAL CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.7, p.675-679

38. THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE PAL, BB; CHAKRABARTI, P Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3, p.173-177

39. CHROMIC ACID OXIDATION OF ATROLACTIC ACID SENGUPTA, KK; CHATTERJ*, AK; PAL, BB; SASMAL, N Source: ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT; 1970; v.72, no.4-6, p.330-&

40. Effect of signal modulated optical illumination on the Schrodinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics Singh, PK; Pal, BB Source: JOURNAL OF APPLIED PHYSICS; OCT 1 2000; v.88, no.7, p.4325-4333

41. Frequency-dependent OPFET characteristics with improved absorption under back illumination Roy, NS; Pal, BB Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; APR 2000; v.18, no.4, p.604-613

42. Effect of illumination on Schrodinger's wave function in the quantum well of MODFET and related device characteristics Singh, PK; Pal, BB Source: SOLID-STATE ELECTRONICS; OCT 1999; v.43, no.10, p.1833-1843

43. FREQUENCY-DEPENDENT BEHAVIOR OF AN ION-IMPLANTED GAAS OPFET CONSIDERING THE PHOTOVOLTAIC EFFECT AND THE GATE DEPLETION WIDTH MODULATION PAL, BB; SHUBHA; KUMAR, KH; KHAN, RU Source: SOLID-STATE ELECTRONICS ; MAY 1995; v.38, no.5, p.1097-1102

44. ENHANCED OPTICAL EFFECT IN A HIGH-ELECTRON-MOBILITY PHOTOTRANSISTOR DEVICE - 2-DIMENSIONAL MODELING CONSIDERING A REALISTIC VELOCITY-FIELD RELATION PAL, BB; MITRA, H; SINGH, DP Source: OPTICAL ENGINEERING ; APR 1994; v.33, no.4, p.1250-1254

45. EFFECT OF SIGNAL-MODULATED OPTICAL RADIATION ON THE CHARACTERISTICS OF A MODFET MITRA, H; SINGH, DP; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; APR 1993; v.56, no.4, p.335-341

46. A MODIFIED IV RELATION FOR ION-IMPLANTED SI OPFETS PAL, BB; CHATTOPADHAY, SN Source: SOLID-STATE ELECTRONICS ; 1991; v.34, no.10, p.1183-1184

47. INDUCIBILITY AND STABILITY OF AUXOTROPHIC MUTATIONS IN MYCOBACTERIUM-FORTUITUM, MYCOBACTERIUM-SMEGMATIS AND MYCOBACTERIUM-VACCAE SUBRAMANYAM, VR; PAL, BB; MOHANTY, KK Source: LETTERS IN APPLIED MICROBIOLOGY ; 1989; v.8, no.5, p.161-164

48. EFFECT OF DIFFUSION AND MODULATED FREQUENCY IN AN ION-IMPLANTED OPFET SINGH, VK; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1987; v.34, no.11, p.2270-2279

49. EFFECT OF OPTICAL RADIATION IN A PHOTO-DOVATT CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.311-315

50. EQUIVALENT-CIRCUIT ANALYSIS OF A SYSTEM OF COUPLED HELICAL TRANSMISSION-LINES IN A COMPLEX ENVIRONMENT SINGH, VN; BASU, BN; PAL, BB; VAIDYA, NC Source: JOURNAL OF APPLIED PHYSICS ; 1983; v.54, no.7, p.4141-4146

51. GENERALIZED SMALL-SIGNAL ANALYSIS OF A DAR (DOUBLE AVALANCHE REGION) IMPATT DIODE DATTA, DN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1982; v.25, no.6, p.435-439

52. SMALL-SIGNAL ANALYSIS OF A P-N JUNCTION AVALANCHE DIODE HAVING A UNIFORM AVALANCHE ZONE AND A DRIFT ZONE FOR UNEQUAL IONIZATION RATES AND DRIFT VELOCITIES OF ELECTRONS AND HOLES PAL, BB; ROY, SK Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; 1971; v.4, no.12, p.2041-&

53. Incidence and molecular analysis of Vibrio cholerae associated with cholera outbreak subsequent to the super cyclone in Orissa, India Chhotray, GP; Pal, BB; Khuntia, HK; Chowdhury, NR; Chakraborty, S; Yamasaki, S; Ramamurthy, T; Takeda, Y; Bhattacharya, SK; Nair, GB Source: EPIDEMIOLOGY AND INFECTION; APR 2002; v.128, no.2, p.131-138

54. Analysis of buried gate MESFET under dark and illumination Verma, MK; Pal, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; SEP 2001; v.48, no.9, p.2138-2142

55. Esophageal motility changes after endoscopic intravariceal sclerotherapy with absolute alcohol Ghoshal, UC; Dhar, K; Chaudhuri, S; Pal, BB; Pal, AK; Banerjee, PK Source: DISEASES OF THE ESOPHAGUS; JUN 2000; v.13, no.2, p.148-151

56. Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination Roy, NS; Pal, BB; Khan, RU Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; FEB 2000; v.18, no.2, p.221-229

57. Seroprevalence of HIV infection among jail inmates in Orissa Pal, BB; Acharya, AS; Satyanarayana, K Source: INDIAN JOURNAL OF MEDICAL RESEARCH; JUN 1999; v.109, p.199-201

58. Generalized dc model of GaAs optical field effect transistor considering ion-implanted profile Saxena, SR; Lohani, RB; Khan, RU; Pal, BB Source: OPTICAL ENGINEERING; APR 1998; v.37, no.4, p.1343-1352

59. Phenomenon of resist debris formation in electron beam lithography and its possible application Deshmukh, PR; Rangra, KJ; Singh, M; Vyas, PD; Pal, BB Source: VACUUM; NOV 1996; v.47, no.11, p.1305-1311

60. A superlattice avalanche region IMPATT diode Chandramohan, KK; Khan, RU; Pal, BB Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; SEP-DEC 1994; v.40, no.5-6, p.261-265

61. EFFECT OF CONCENTRATION-DEPENDENT CARRIER MOBILITY AND LIFETIME ON THE OPTICALLY-CONTROLLED CHARACTERISTICS OF AN HEMT DEVICE PAL, BB; MITRA, H; SINGH, S Source: INTERNATIONAL JOURNAL OF OPTOELECTRONICS ; MAY-JUN 1994; v.9, no.3, p.243-249

62. SURFACE RECOMBINATION AND CARRIER-FREQUENCY-DEPENDENT INTRINSIC PARAMETERS OF AN ION-IMPLANTED GAAS OPFET SINGH, VK; SINGH, SR; PAL, BB Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 1991; v.6, no.4, p.231-236

63. NOISE CHARACTERISTICS OF A NEW HETEROJUNCTION AVALANCHE PHOTODIODE CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB Source: IEE PROCEEDINGS-J OPTOELECTRONICS ; 1990; v.137, no.2, p.97-100

64. ON THE SCALING OF AN ION-IMPLANTED SILICON MESFET CHATTOPADHYAY, SN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.2, p.119-123

65. LARGE-SIGNAL BEHAVIOR OF DOUBLE-AVALANCHE-REGION IMPATT DIODES CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.2, p.147-153

66. CARRIER FREQUENCY-DEPENDENT INTRINSIC PARAMETERS IN AN ION-IMPLANTED SILICON PHOTO-MESFET SINGH, VK; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.44, no.4, p.361-364

67. STUDY OF FREQUENCY-RESPONSE OF MULTIPLICATION GAIN OF A 2-LAYER AVALANCHE PHOTODIODE PAL, BB; ROY, SK Source: PROCEEDINGS OF THE IEEE; 1974; v.62, no.2, p.285-287

68. A goal programming procedure for fuzzy multiobjective linear fractional programming problem Pal, BB; Moitra, BN; Maulik, U Source: FUZZY SETS AND SYSTEMS; OCT 16 2003; v.139, no.2, p.395-405

69. A fuzzy goal programming procedure for solving quadratic bilevel programming problems Pal, BB; Moitra, BN Source: INTERNATIONAL JOURNAL OF INTELLIGENT SYSTEMS; MAY 2003; v.18, no.5, p.529-540

70. A goal programming procedure for solving problems with multiple fuzzy goals using dynamic programming Pal, BB; Moitra, BN Source: EUROPEAN JOURNAL OF OPERATIONAL RESEARCH; FEB 1 2003; v.144, no.3, p.480-491

71. A new optoelectronic integrated device for light-amplifying optical switch (LAOS) Jit, S; Pal, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 2001; v.48, no.12, p.2732-2739

72. Effect of substrate illumination on the characteristics of an ion implanted GaAsOPFET Roy, NS; Pal, BB; Khan, RU Source: IEE PROCEEDINGS-OPTOELECTRONICS; AUG 2000; v.147, no.4, p.237-243

73. Light dependence of SOI MOSFET with nonuniform doping profile Abraham, GK; Pal, BB; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; JUL 2000; v.47, no.7, p.1469-1471

74. GaAsOPFET characterisation considering concentration dependent carrier mobility and life time Mitra, H; Lohani, RB; Shubha; Khan, RU; Pal, BB Source: IETE JOURNAL OF RESEARCH; SEP-DEC 1999; v.45, no.5-6, p.333-339

75. Effect of local oscillator and modulating signal on the performance of an ion-implanted GaAsOPFET Pal, BB; Roy, NS; Ray, DKR; Singh, S; Chattopadhyay, SN Source: IETE JOURNAL OF RESEARCH; MAR-APR 1999; v.45, no.2, p.115-121

76. Scaling rule for OPFET Pal, BB; Chattopadhyay, SN Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; FEB 1996; v.43, no.2, p.368-369

77. Noise characteristics of a superlattice avalanche region IMPATT diode Rao, KSVSNP; Pal, BB; Khan, RU Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; JAN-FEB 1996; v.42, no.1, p.47-51

78. THEORETICAL-STUDIES ON THE TRANSIENT-BEHAVIOR OF HIGH-ELECTRON-MOBILITY PHOTOTRANSISTORS MITRA, H; SINGH, S; PAL, BB Source: OPTICAL ENGINEERING ; AUG 1995; v.34, no.8, p.2475-2480

79. SPECIAL ISSUE ON MICROWAVE AND MM WAVE SOURCES AND APPLICATIONS .2. PAL, BB Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS ; JAN-FEB 1994; v.40, no.1, p.2-2

80. THEORY OF THE MM WAVE IMPATT DIODE - A REVIEW PAL, BB; KHAN, RU; CHAKRABARTI, P Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS ; JAN-FEB 1994; v.40, no.1, p.35-42

81. EFFECT OF OPTICAL RADIATION AND SURFACE RECOMBINATION ON THE RF SWITCHING PARAMETERS OF A GAAS-MESFET SINGH, VK; PAL, BB Source: IEE PROCEEDINGS-J OPTOELECTRONICS ; 1990; v.137, no.2, p.124-128

82. ELECTRICAL CHARACTERISTICS OF AN ION-IMPLANTED P-GA0.47IN0.53AS MESFET AT DIFFERENT SCHOTTKY-BARRIER HEIGHTS CHATTOPADHYAY, SN; DUTTA, D; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1990; v.33, no.7, p.963-967

83. CRYPTOSPORIDIOSIS IN CHILDREN OF EASTERN-INDIA SUBRAMANYAM, VR; BROADHEAD, RL; PAL, BB; PATI, JB; MOHANTY, G Source: ANNALS OF TROPICAL PAEDIATRICS ; 1989; v.9, no.2, p.122-125

84. THE ELECTRON IONIZATION RATE IN GA1-XINXASYP1-Y ALLOYS SINGH, SR; PAL, BB Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 1988; v.3, no.5, p.461-463

85. MODULATED FREQUENCY-DEPENDENT PARAMETERS OF AN OPFET SINGH, VK; PAL, BB Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1987; v.134, no.9, p.C 581-C 581

86. HOT-ELECTRON DRIFT VELOCITY IN III-V SEMICONDUCTORS UNDER THE CONDITION OF IMPACT IONIZATION SINGH, SR; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.1, p.53-60

87. EFFECT OF INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD PAL, BB; CHAKRABARTI, P Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1987; v.134, no.4, p.C 231-C 231

88. COMPUTER-SIMULATION OF ION-IMPLANTED DAR IMPATT AROUND 94-GHZ UNDER STEADY-STATE CONDITION CHAKRABARTI, P; PAL, BB Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 1986; v.94, no.1, p.305-313 Conference:

89. SUPERLATTICE P1+N+ AVALANCHE PHOTODIODE PAL, BB; SINGH, SR Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1986; v.133, no.6, p.C226-C226

90. SIMPLE COMPUTER METHOD FOR THE STUDY OF FIELD AND CURRENT-DENSITY PROFILES IN P-I-N AVALANCHE-DIODES GHOSH, R; ROY, SK; PAL, BB Source: INDIAN JOURNAL OF PURE & APPLIED PHYSICS ; 1979; v.17, no.9, p.563-566

91. MICROWAVE PROPERTIES OF A PROPOSED READ-LIKE DEVICE WITH VARIABLE CURRENT MULTIPLICATION IN AVALANCHE ZONE AND AN ADDITIONAL TRANSVERSE FIELD IN DRIFT ZONE ROY, SK; GOSWAMI, PK; PAL, BB Source: PROCEEDINGS OF THE IEEE ; 1978; v.66, no.1, p.92-94

92. SECOND-HARMONIC POWER-GENERATION IN A READ DIODE AND ITS DEPENDENCE ON FUNDAMENTAL MODE OF OSCILLATIONS PAL, BB; ROY, SK Source: SOLID-STATE ELECTRONICS; 1973; v.16, no.10, p.1207-1210

93. ANALYTICAL EXPRESSION FOR SMALL-SIGNAL IMPEDANCE OF A P-N-JUNCTION AVALANCHE-DIODE HAVING UNEQUAL IONIZATION RATES AND DRIFT VELOCITIES FOR HOLES + ELECTRONS PAL, BB; ROY, SK Source: INDIAN JOURNAL OF PURE & APPLIED PHYSICS; 1972; v.10, no.3, p.192-&

94. SMALL SIGNAL ANALYSIS OF SECOND HARMONIC MODE IN A UNIFORMLY AVALANCHING P-I-N DIODE HAVING UNEQUAL IONIZATION RATES AND DRIFT VELOCITIES FOR ELECTRONS AND HOLES PAL, BB; SOM, B; ROY, SK Source: INTERNATIONAL JOURNAL OF ELECTRONICS; 1971; v.30, no.4, p.365-&

Other Publications

Title: A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs.
Author: Pandey, P; Pal, BB; Jit, S
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Feb. 2004; vol.51, no.2, p.246-54
Publisher: USA : IEEE, 2004
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Analytical model of an optically controlled DCFL inverter using normally-off MESFETs.
Author: Bandhawakar, G.; Jit, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil; p.683-8 vol.2
Conference: 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil
Editor: Kalinowski, HJ; Romero, MA; Barbin, SE
Publisher: Piscataway, NJ, USA : IEEE, 2003
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Light-source-integrated OPFET (LSI-OPFET): a new integrated device for optically controlled varying gain amplifier.
Author: Jit, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Proceedings of the SPIE - The International Society for Optical Engineering; 2002; vol.4905, p.497-507
Conference: APOC 2002: Asia-Pacific Optical and Wireless Communications. Materials and Devices for Optical and Wireless Communications, 15-18 Oct. 2002, Shanghai, China
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2002
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE

Title: Effect of illumination on Schrodinger wave function in the quantum well of MODFET and related device characteristics.
Author: Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Eleventh International Workshop on the Physics of Semiconductor Devices, 11-15 Dec. 2001, Delhi, India; p.783-90 vol.2
Conference: Eleventh International Workshop on the Physics of Semiconductor Devices, 11-15 Dec. 2001, Delhi, India
Editor: Kumar, V.; Basu, PK
Publisher: Washington, DC, USA : SPIE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Enhancement mode MESFET under optically controlled condition.
Author: Bandhawakar, G.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Eleventh International Workshop on the Physics of Semiconductor Devices, 11-15 Dec. 2001, Delhi, India; p.182-6 vol.1
Conference: Eleventh International Workshop on the Physics of Semiconductor Devices, 11-15 Dec. 2001, Delhi, India
Editor: Kumar, V.; Basu, PK
Publisher: Washington, DC, USA : SPIE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: A new optoelectronic integrated device for light-amplifying optical switch (LAOS).
Author: Jit, S; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Dec. 2001; vol.48, no.12, p.2732-9
Publisher: USA : IEEE, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Analysis of buried gate MESFET under dark and illumination.
Author: Verma, MK; Pal, BB
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Adv Study Microelect, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Adv Study Microelect, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Sept. 2001; vol.48, no.9, p.2138-42
Publisher: USA : IEEE, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: OPFET-LAOS: a new optoelectronic integrated device for light amplifying optical switch.
Author: Jit, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Proceedings of the SPIE - The International Society for Optical Engineering; 2001; vol.4580, p.131-40
Conference: APOC 2001: Asia-Pacific Optical and Wireless Communications. Optoelectronics, Materials, and Devices for Communications, 12-15 Nov. 2001, Beijing, China
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2001
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE

Title: Optically controlled E-MESFET for VLSI application.
Author: Bandhawakar, G.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Proceedings of the SPIE - The International Society for Optical Engineering; 2001; vol.4600, p.43-54
Conference: Advances in Microelectronic Device Technology, 7-9 Nov. 2001, Nanjing, China
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2001
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE

Title: Effect of signal modulated optical illumination on the Schrodinger wave function in a quantum well in a modulation doped field effect transistor and related device characteristics.
Author: Singh, PK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Journal of Applied Physics; 1 Oct. 2000; vol.88, no.7, p.4325-33
Publisher: USA : AIP, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of substrate illumination on the characteristics of an ion implanted GaAs OPFET.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: IEE Proceedings-Optoelectronics; Aug. 2000; vol.147, no.4, p.237-43
Publisher: UK : IEE, 2000
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of substrate illumination on the characteristics of an ion implanted GaAsOPFET
Author: Roy, NS; Pal, BB; Khan, RU
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEE PROCEEDINGS-OPTOELECTRONICS; AUG 2000; v.147, no.4, p.237-243
Publisher: IEE-INST ELEC ENG
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Light dependence of SOI MOSFET with nonuniform doping profile.
Author: Abraham, GK; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; July 2000; vol.47, no.7, p.1469-71
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Frequency-dependent OPFET characteristics with improved absorption under back illumination.
Author: Saha Roy, N.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of Lightwave Technology; April 2000; vol.18, no.4, p.604-13
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE

Title: Frequency-dependent OPFET characteristics with improved absorption under back illumination
Author: Roy, NS; Pal, BB
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; APR 2000; v.18, no.4, p.604-613
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; Feb. 2000; vol.18, no.2, p.221-9
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: I-V characteristics of a p-channel depletion mode SOI MESFET.
Author: Abraham, GK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Seventh National Symposium on Antennas and Propagation, 6-8 Dec. 2000, Cochin, India; p.104-7
Conference: Seventh National Symposium on Antennas and Propagation, 6-8 Dec. 2000, Cochin, India
Editor: Nair, KG; Vasudevan, K.; Mathew, KT; Mohanan, P.; Aanandan, CK
Publisher: Cochin, India : CREMA, Cochin Univ. Sci. & Technol, 2000
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Signal modulated OPFET behaviour under back illumination.
Author: Nandita Saba Roy; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Proceedings of the SPIE - The International Society for Optical Engineering; 2000; vol.3975, pt.1-2, p.645-8
Conference: Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 Dec. 1999, New Delhi, India
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2000
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE

Title: Analysis of GaAs OPFET with improved optical absorption under back illumination.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: IEEE Transactions on Electron Devices; Dec. 1999; vol.46, no.12, p.2350-3
Publisher: USA : IEEE, 1999
Doc. Type: Article
Copyright: �2004 IEE

Title: Analysis of GaAsOPFET with improved optical absorption under back illumination
Author: Roy, NS; Pal, BB; Khan, RU
Institution: Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar Pradesh, India
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 1999; v.46, no.12, p.2350-2353
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Effect of illumination on Schrodinger's wave function in the quantum well of MODFET and related device characteristics.
Author: Singh, PK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Solid-State Electronics; Oct. 1999; vol.43, no.10, p.1833-43
Publisher: UK : Elsevier, 1999
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: GaAsOPFET characterisation considering concentration dependent carrier mobility and life time
Author: Mitra, H; Lohani, RB; Shubha; Khan, RU; Pal, BB
Institution: Diesel Locomot Works, Varanasi 221004, Uttar Pradesh, India; Diesel Locomot Works, Varanasi 221004, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IETE JOURNAL OF RESEARCH; SEP-DEC 1999; v.45, no.5-6, p.333-339
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Effect of local oscillator and modulating signal on the performance of an ion-implanted GaAs OPFET.
Author: Pal, BB; Roy, NS; Raut Ray, DK; Singh, S.; Chattopadhyay, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: IETE Journal of Research; March-April 1999; vol.45, no.2, p.115-21
Publisher: India : Instn. Electron. & Telecommun. Eng, 1999
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of local oscillator and modulating signal on the performance of an ion-implanted GaAsOPFET
Author: Pal, BB; Roy, NS; Ray, DKR; Singh, S; Chattopadhyay, SN
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; VLSI Design Semicond Complex Ltd, Chandigarh 160059, India; UP Coll, Dept Phys, Varanasi 221005, Uttar Pradesh, India; Univ Calcutta, Inst Radio Phys & Elect, Calcutta 700009, W Bengal, India
Source: IETE JOURNAL OF RESEARCH; MAR-APR 1999; v.45, no.2, p.115-121
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Schrodinger's wave function and related device characteristics in MODFET under illumination.
Author: Singh, PK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., India
Source: Proceedings of the SPIE - The International Society for Optical Engineering; 1999; vol.3666, p.252-9
Conference: International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '98, 14-18 Dec. 1998, New Delhi, India
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 1999
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE

Title: Generalized DC model of GaAs optical field effect transistor considering ion-implanted profile.
Author: Saxena, SR; Lohani, RB; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; COET, Dept Elect Engn, Jalgaon 425001, India
Source: Optical Engineering; April 1998; vol.37, no.4, p.1343-52
Publisher: USA : SPIE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate.
Author: Shubha; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Jan. 1998; vol.45, no.1, p.78-84
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optical effect in InAlAs/InGaAs/InP MODFET.
Author: Mitra, H; Pal, BB; Singh, S; Khan, RU
Affiliation: D.L.W., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Udai Pratap Coll, Dept Phys, Varanasi 221002, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Jan. 1998; vol.45, no.1, p.68-77
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Phenomenon of resist debris formation in electron beam lithography and its possible application.
Author: Deshmukh, PR; Rangra, KJ; Singh, M; Vyas, PD; Pal, BB
Affiliation: Central Electron. Eng. Res. Inst., Pilani, India
Institution: CENT ELECT ENGN RES INST, SEMICOND DEVICES AREA, PILANI 333031, RAJASTHAN, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Vacuum; Nov. 1996; vol.47, no.11, p.1305-11
Publisher: UK : Elsevier, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Scaling rule for OPFET.
Author: Pal, BB; Chattopadhyay, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; USHA INDIA LTD, FARIDABAD 121003, INDIA
Source: IEEE Transactions on Electron Devices; Feb. 1996; vol.43, no.2, p.368-9
Publisher: USA : IEEE, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise characteristics of a superlattice avalanche region IMPATT diode
Author: Rao, KSVSNP; Pal, BB; Khan, RU
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; JAN-FEB 1996; v.42, no.1, p.47-51
Publisher: INST ELECTR TELECOMMUN ENGRS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Noise characteristics of a superlattice avalanche region IMPATT diode.
Author: Prasad Rao, KSV SN; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan.-Feb. 1996; vol.42, no.1, p.47-51
Publisher: India : Instn. Electron. & Telecommun. Eng, 1996
Doc. Type: Article
Copyright: �2004 IEE

Title: Ion implanted GaAs MESFET characteristics for different dopants and implanted energy.
Author: Singh, JS; Khan, RU; Pal, BB; Chattopadhyay, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.130-2
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: InAlAs-InGaAs-InP modulation doped optoelectronic field effect transistor (MODOFET) for 1.3-1.6 mu m systems.
Author: Mitra, H.; Puri, M.; Singh, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.127-9
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Effect of concentration dependent carrier mobility and life time on GaAs OPFET characteristics.
Author: Shubha; Lohani, RB; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.125-6
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: The transient and DC characteristics of a high electron mobility photo transistor.
Author: Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.94-9
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: Theoretical studies on the transient behavior of high electron mobility phototransistors.
Author: MITRA, H; SINGH, S; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; UDAI PRATAP COLL, VARANASI 221005, UTTAR PRADESH, INDIA; INDIRA GANDHI NATL OPEN UNIV, CTR VARANASI STUDY, NEW DELHI, INDIA
Source: Optical Engineering; Aug. 1995; vol.34, no.8, p.2475-80
Publisher: USA : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Frequency dependent behaviour of an ion implanted GaAs OPFET considering the photovoltaic effect and the gate depletion width modulation.
Author: PAL, BB; SHUBHA; KUMAR, KH; KHAN, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; May 1995; vol.38, no.5, p.1097-102
Publisher: UK : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optical effect in small geometry devices.
Author: Pal, BB; Sahoo, RK
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Proceedings of the SPIE - The International Society for Optical Engineering; 1995; vol.2397, p.236-41
Conference: Optoelectronic Integrated Circuit Materials, Physics, and Devices, 6-9 Feb. 1995, San Jose, CA, USA
Publisher: USA : 1995
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE

Title: A superlattice avalanche region IMPATT diode.
Author: Chandramohan, KK; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept.-Dec. 1994; vol.40, no.5-6, p.261-5
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: EFFECT OF CONCENTRATION-DEPENDENT CARRIER MOBILITY AND LIFETIME ON THE OPTICALLY-CONTROLLED CHARACTERISTICS OF AN HEMT DEVICE
Author: PAL, BB; MITRA, H; SINGH, S
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; UP COLL, DEPT PHYS, VARANASI 221002, INDIA
Source: INTERNATIONAL JOURNAL OF OPTOELECTRONICS; MAY-JUN 1994; v.9, no.3, p.243-249
Publisher: TAYLOR & FRANCIS LTD
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Effect of concentration-dependent carrier mobility and lifetime on the character-controlled characteristics of an HEMT device.
Author: Pal, BB; Mitra, H.; Singh, S.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: International Journal of Optoelectronics; May-June 1994; vol.9, no.3, p.243-9
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE

Title: ENHANCED OPTICAL EFFECT IN A HIGH-ELECTRON-MOBILITY PHOTOTRANSISTOR DEVICE - 2-DIMENSIONAL MODELING CONSIDERING A REALISTIC VELOCITY-FIELD RELATION
Author: PAL, BB; MITRA, H; SINGH, DP
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005, UTTAR PRADESH, INDIA
Source: OPTICAL ENGINEERING; APR 1994; v.33, no.4, p.1250-1254
Publisher: SOC PHOTO-OPT INSTRUM ENG
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Enhanced optical effect in a high-electron-mobility phototransistor device: two-dimensional modeling considering a realistic velocity-field relation.
Author: Pal, BB; Mitra, H.; Singh, DP
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Optical Engineering; April 1994; vol.33, no.4, p.1250-4
Publisher: USA : 1994
Doc. Type: Article
Copyright: �2004 IEE

Title: Time dependent analysis of an ion-implanted GaAs OPFET.
Author: PAL, BB; CHATTOPADHYAY, SN; MISHRA, S; SINGH, S; KHAN, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, IT, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; UP COLL, DEPT PHYS, VARANASI, INDIA
Source: IEEE Transactions on Electron Devices; April 1994; vol.41, no.4, p.491-8
Publisher: USA : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: SPECIAL ISSUE ON MICROWAVE AND MM WAVE SOURCES AND APPLICATIONS .2.
Author: PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; JAN-FEB 1994; v.40, no.1, p.2-2
Publisher: INST ELECTR TELECOMMUN ENGRS
Doc. Type: Editorial Material; Miscellaneous
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Theory of the MM wave IMPATT diode: A review.
Author: PAL, BB; KHAN, RU; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan.-Feb. 1994; vol.40, no.1, p.35-42
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optoelectronic charge coupled device (OECCD) using InP MIS capacitor array.
Author: PAL, BB; NELSON, SS
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; Oct. 1993; vol.40, no.10, p.1878-80
Publisher: USA : 1993
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: EFFECT OF SIGNAL-MODULATED OPTICAL RADIATION ON THE CHARACTERISTICS OF A MODFET
Author: MITRA, H; SINGH, DP; PAL, BB
Institution: BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005, UTTAR PRADESH, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; APR 1993; v.56, no.4, p.335-341
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Effect of signal-modulated optical radiation on the characteristics of a MODFET.
Author: Mitra, H.; Singh, DP; Pal, BB
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1993; vol.A56, no.4, p.335-41
Publisher: Germany : 1993
Doc. Type: Article
Copyright: �2004 IEE

Title: Enhanced optical effect in a high electron mobility transistor device.
Author: PAL, BB; MITRA, H
Affiliation: Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA; BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Optical Engineering; April 1993; vol.32, no.4, p.687-91
Publisher: USA : 1993
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: GaAs OPFET characteristics considering the effect of gate depletion with modulation due to incident radiation.
Author: PAL, BB; CHATTOPADHYAY, SN
Affiliation: Dept. of Electr. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; May 1992; vol.39, no.5, p.1021-7
Publisher: USA : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: GaAs MESFET modelling considering the effect of rapid thermal annealing.
Author: Chattopadhyay, SN; Pal, BB
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; March-June 1992; vol.38, no.2-3, p.112-19
Publisher: India : 1992
Doc. Type: Article
Copyright: �2004 IEE

Title: Proximity exposure compensation and resist debris formation in electron beam lithography.
Author: DESHMUKH, PR; SINGH, M; RANGRA, KJ; VYAS, PD; KHOKLE, WS; PAL, BB
Affiliation: Semicond. Devices Area, Central Electron. Eng. Res. Inst., Pilani, India
Institution: CENT ELECT ENGN RES INST, SEMICOND DEVICES AREA, PILANI 333031, RAJASTHAN, INDIA, BANARAS HINDU UNIV, DEPT MICROELECTR ENGN INST TECHNOL, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena); Jan.-Feb. 1992; vol.10, no.1, p.179-82
Publisher: USA : 1992
Doc. Type: Article; NOTE
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Quantum well injection transit time device (QWITT).
Author: Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India; p.2-11
Conference: Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India
Publisher: New Delhi, India : Tata McGraw-Hill, 1992
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: The effect of surface recombination and modulated frequency on the intrinsic parameters of an ion implanted GaAs OPFET.
Author: Singh, VK; Pal, BB; Singh, SR
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India; p.305-8
Conference: Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India
Publisher: New Delhi, India : Tata McGraw-Hill, 1992
Doc. Type: Conference Publication
Copyright: �2004 IEE

Title: A modified I-V relation for ion-implanted Si OPFETs.
Author: PAL, BB; CHATTOPADHAY, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Oct. 1991; vol.34, no.10, p.1183-4
Publisher: UK : 1991
Doc. Type: Article; Letter
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Surface recombination and carrier-frequency-dependent intrinsic parameters of an ion-implanted GaAs OPFET.
Author: SINGH, VK; SINGH, SR; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Semiconductor Science and Technology; April 1991; vol.6, no.4, p.231-6
Publisher: UK : 1991
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Electrical characteristics of an ion-implanted p-Ga{sub 0.47}In{sub 0.53}As MESFET at different Schottky barrier heights.
Author: Chattopadhyay, SN; Dutta, D.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Solid-State Electronics; July 1990; vol.33, no.7, p.963-7
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE

Title: The effect of surface recombination on the frequency-dependent characteristics of an ion-implanted GaAs OPFET.
Author: MISHRA, S; SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; April 1990; vol.37, no.4, p.942-6
Publisher: USA : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of optical radiation and surface recombination on the RF switching parameters of a GaAs MESFET.
Author: SINGH, VK; PAL, BB
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2, p.124-8
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise characteristics of a new heterojunction avalanche photodiode.
Author: CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2, p.97-100
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFET.
Author: MISHRA, S; SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; Jan. 1990; vol.37, no.1, p.2-10
Publisher: USA : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Electrical characteristics of an ion-implanted p-Ga{sub 0.47}In{sub 0.53}As MESFET at different Schottky barrier heights.
Author: CHATTOPADHYAY, SN; DUTTA, D; PAL, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1990; vol.33, no.7, p.963-7
Publisher: UK : 1990
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A long wavelength avalanche photodetector for optical communications.
Author: CHAKRABARTI, P; ABRAHAM, BR; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1989; vol.32, no.7, p.521-4
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: The effects of annealing on the switching characteristics of an ion-implanted silicon MESFET.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; May 1989; vol.36, no.5, p.920-9
Publisher: USA : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: On the scaling of an ion-implanted silicon MESFET.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Feb. 1989; vol.32, no.2, p.119-23
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, FAC TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; Jan. 1989; vol.36, no.1, pt.1, p.81-7
Publisher: USA : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4, p.331-334
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: A unified model for MESFET analysis.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Semiconductor Science and Technology; March 1988; vol.3, no.3, p.185-90
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A new infrared avalanche photodiode for long distance fiber optic communication.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol., Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI 835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1988; vol.31, no.1, p.1-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: The electron ionisation rate in Ga{sub 1-x}In{sub x}As{sub y}P{sub 1-y} alloys.
Author: SINGH, SR; PAL, BB
Affiliation: Dept. of Electron. Eng., Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Semiconductor Science and Technology; May 1988; vol.3, no.5, p.461-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photoMESFET.
Author: Singh, VK; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); Dec. 1987; vol.A44, no.4, p.361-4
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of diffusion and modulated frequency in an ion-implanted OPFET.
Author: Singh, VK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: IEEE Transactions on Electron Devices; Nov. 1987; vol.ED-34, no.11, p.2270-9
Publisher: USA : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Optical characteristics of a superlattice avalanche photodiode.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1987; vol.30, no.7, p.675-9
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Electron ionization rate in III-V ternary semiconductors.
Author: Singh, SR; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); June 1987; vol.A43, no.2, p.105-9
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Hot-electron drift velocity in III-V semiconductors under the condition of impact ionization.
Author: Singh, SR; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); May 1987; vol.A43, no.1, p.53-60
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Accurate modeling of an ion-implanted MESFET.
Author: CHATTOPADHYAY, SN; SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng. , Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, MICROELECTR & DEVICES LAB, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; April 1987; vol.30, no.4, p.391-6
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Effect of optical radiation in a photo-DOVATT.
Author: Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42, no.4, p.311-15
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: MITATT mode in DDR heterostructure Impatt.
Author: Khan, RU; Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42, no.4, p.303-9
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Optically-controlled switching characteristics of silicon MESFETs.
Author: SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, MICROELECTR & DEVICES LAB, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; March 1987; vol.30, no.3, p.267-72
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Theoretical characterisation of a superlattice avalanche photodiode.
Author: Pal, BB; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); March 1987; vol.A42, no.3, p.173-7
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE

Title: Large-signal behaviour of double-avalanche-region IMPATT diodes.
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Feb. 1987; vol.30, no.2, p.147-54
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Frequency dependent characteristics in an ion-implanted photo MESFET.
Author: SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, MICROELECTR & DEVICE LAB, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1987; vol.30, no.1, p.113-18
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: CARRIER FREQUENCY-DEPENDENT INTRINSIC PARAMETERS IN AN ION-IMPLANTED SILICON PHOTO-MESFET
Author: SINGH, VK; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, MICROELECTR & DEVICE LAB, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.44, no.4, p.361-364
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: EFFECT OF DIFFUSION AND MODULATED FREQUENCY IN AN ION-IMPLANTED OPFET
Author: SINGH, VK; PAL, BB
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; NOV 1987; v.34, no.11, p.2270-2279
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: MODULATED FREQUENCY-DEPENDENT PARAMETERS OF AN OPFET
Author: SINGH, VK; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; SEP 1987; v.134, no.9, p.C581-C581
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.

Title: ELECTRON IONIZATION RATE IN III-V TERNARY SEMICONDUCTORS
Author: SINGH, SR; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.2, p.105-109
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: HOT-ELECTRON DRIFT VELOCITY IN III-V SEMICONDUCTORS UNDER THE CONDITION OF IMPACT IONIZATION
Author: SINGH, SR; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.1, p.53-60
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: EFFECT OF INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, FAC TOXICOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; APR 1987; v.134, no.4, p.C231-C231
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.

Title: MITATT MODE IN DDR HETEROSTRUCTURE IMPATT
Author: KHAN, RU; CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.303-309
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: EFFECT OF OPTICAL RADIATION IN A PHOTO-DOVATT
Author: CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.311-315
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3, p.173-177
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.

Title: A new solid-state device as a source of power in mm wave.
Author: Pal, BB; Khan, RU; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept.-Oct. 1986; vol.32, no.5, p.397-402
Publisher: India : 1986
Doc. Type: Article
Copyright: �2004 IEE

Title: Optically controlled characteristics in an ion-implanted silicon MESFET.
Author: SINGH, VK; CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1986; vol.29, no.7, p.707-11
Publisher: UK : 1986
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Computer simulation of ion-implanted DAR Impatt around 94 GHz under steady state condition.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 March 1986; vol.94, no.1, p.305-13
Conference: Working Meeting on Ion Implantation in Semiconductors and Other Materials and Ion Beam Devices, 13-18 Oct. 1985, Balatonaliga, Hungary
Publisher: East Germany : 1986
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: SUPERLATTICE P1+N+ AVALANCHE PHOTODIODE
Author: PAL, BB; SINGH, SR
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; JUN 1986; v.133, no.6, p.C226-C226
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Compositional dependence of permittivity in quaternary III-V semiconductor compounds.
Author: PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Dec. 1985; vol.28, no.12, p.1235-9
Publisher: UK : 1985
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: DC computer simulation of GaAs DAR IMPATT suitable for MM wave.
Author: Pal, BB; Choudhury, SC
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; May-June 1985; vol.31, no.3, p.106-8
Publisher: India : 1985
Doc. Type: Article
Copyright: �2004 IEE

Title: Ionization rates of electrons and holes in GaAs considering electron-electron and hole-hole interactions.
Author: Singh, SR; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: IEEE Transactions on Electron Devices; March 1985; vol.ED-32, no.3, p.599-604
Publisher: USA : 1985
Doc. Type: Article
Copyright: �2004 IEE

Title: IONIZATION RATES OF ELECTRONS AND HOLES IN GAAS CONSIDERING ELECTRON ELECTRON AND HOLE HOLE INTERACTIONS
Author: SINGH, SR; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; 1985; v.32, no.3, p.599-604
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: A high efficiency high power DOVATT diode in the X-band.
Author: Khan, RU; Chaudhary, SC; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept. 1984; vol.30, no.5, p.121-4
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE

Title: Design curves for an inhomogeneously-loaded helical slow-wave structure for a broad-band travelling-wave tube.
Author: Singh, VN; Pal, BB; Basu, BN; Vaidya, NC
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; May 1984; vol.30, no.3, p.55-7
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE

Title: Optimum design of a potentially dispersion-free helical slow-wave circuit of a broadband TWT.
Author: Basu, BN; Pal, BB; Singh, VN; Vaidya, NC
Affiliation: Dept. of Electronic Engng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: IEEE Transactions on Microwave Theory and Techniques; April 1984; vol.MTT-32, no.4, p.461-3
Publisher: USA : 1984
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of impurity concentration and biasing-current density on the performance of a new DDR heterojunction IMPATT diode.
Author: Pal, BB; Khan, RU
Affiliation: Dept of Electronics Engng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan. 1984; vol.30, no.1, p.22-4
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE

Title: OPTIMUM DESIGN OF A POTENTIALLY DISPERSION-FREE HELICAL SLOW-WAVE CIRCUIT OF A BROAD-BAND TWT
Author: BASU, BN; PAL, BB; SINGH, VN; VAIDYA, NC
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, CTR RES MICROWAVE TUBES, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; 1984; v.32, no.4, p.461-463
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article; Note
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Equivalent circuit analysis of a system of coupled helical transmission lines in a complex environment.
Author: SINGH, VN; BASU, BN; PAL, BB; VAIDYA, NC
Affiliation: Dept. of Electronics Engng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, CTR RES MICROWAVE TUBES, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of Applied Physics; July 1983; vol.54, no.7, p.4141-6
Publisher: USA : 1983
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A comparative study of the properties of single velocity and double velocity hetero-junction IMPATT diodes.
Author: Khan, RU; Pal, BB
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Feb. 1983; vol.29, no.2, p.68-71
Publisher: India : 1983
Doc. Type: Article
Copyright: �2004 IEE

Title: Generalised small signal analysis of a DAR (double avalanche region) IMPATT diode.
Author: DATTA, DN; PAL, BB
Affiliation: Centre of Advanced Study in Radio Phys. & Electronics, Univ. of Calcutta, Calcutta, India
Institution: UNIV CALCUTTA, CTR ADV STUDY RADIO PHYS & ELECTR, CALCUTTA 700009, W BENGAL, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; June 1982; vol.25, no.6, p.435-9
Publisher: UK : 1982
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: COMPUTER-ANALYSIS OF DC FIELD AND CURRENT-DENSITY PROFILES OF DAR IMPATT DIODE
Author: DATTA, DN; PATI, SP; BANERJEE, JP; PAL, BB; ROY, SK
Institution: UNIV CALCUTTA, CTR ADV STUDY RADIO PHYS & ELECTR, CALCUTTA 700009, W BENGAL, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; 1982; v.29, no.11, p.1813-1816
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article; Note
Copyright: �2004 Institute for Scientific Information, Inc.