S. K. Srivastava
S. K. Srivastava is a Professor with the Department of Electronics
Engineering, Institute of Technology, Banaras Hindu University, Varanasi,
India. He received the Ph.D. degree in electronics engineering from Banaras
Hindu University in 1968. He has published over 75 research papers in the
area of thin films, solar cells and silicon and thick film microsensors,
including MOS devices. He was formerly the chairman of the department and
is presently the coordinator of the Centre of Advanced Studies in Electronics
Engineering. His current research activities are in the areas of photovoltaic
panel design, silicon technology, MOS devices and microsensor arrays.
Selected Research Publications
Title: Depolarization of microwave/millimeter wave in sand and dust
storms.
Author: Srivastava, SK; Vishwakarma, BR
Affiliation: Dept. of Phys., Gov. PG Coll., Ambikapur, India
Institution: Govt PG Coll, Dept Phys, Ambikapur 497001, India; Govt
PG Coll, Dept Phys, Ambikapur 497001, India; Banaras Hindu Univ, Inst Technol,
Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IETE Journal of Research; March-April 2002; vol.48, no.2,
p.133-8
Publisher: India : Instn. Electron. & Telecommun. Eng, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Development and characterisation of palladium doped tin oxide
thick film paste for gas sensors.
Author: Srivastava, SK; Srivastava, R; Dwivedi, R; Srivastava, R
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, MICROELECT RES CTR,
DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IETE Journal of Research; March-June 1997; vol.43, no.2-3,
p.215-20
Publisher: India : Instn. Electron. & Telecommun. Eng, 1997
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of low and high temperature annealing on the electrical
properties of pure N{sub 2}O/SiH{sub 4} PECVD SiO{sub 2} deposited at a high
rate.
Author: Chanana, RK; Upadhyay, HN; Dwivedi, R; Srivastava, SK
Affiliation: Centre for Res. in Microelectron., Banaras Hindu Univ.,
Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
CTR MICROELECTR RES, VARANASI 221005, UTTAR PRADESH, INDIA
Source: International Journal of Electronics; April 1996; vol.80,
no.4, p.525-32
Publisher: UK : Taylor & Francis, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of low and high temperature annealing on the electrical
properties of pure N{sub 2}O/SiH{sub 4} PECVD SiO{sub 2} deposited at a high
rate.
Author: Chanana, RK; Upadhyay, HN; Dwivedi, R.; Srivastava, SK
Affiliation: Centre for Res. in Microelectron., Banaras Hindu Univ.,
Varanasi, India
Source: International Journal of Electronics; April 1996; vol.80,
no.4, p.525-32
Publisher: UK : Taylor & Francis, 1996
Doc. Type: Article
Copyright: �2004 IEE
Title: Electrical properties of 6.3 nm RF oxygen plasma oxide grown
near room temperature with in situ dry cleaning of Si surface.
Author: CHANANA, RK; UPADHYAY, HN; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; May 1995; vol.38, no.5, p.1075-80
Publisher: UK : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Integrated sensor array for detection of alcohols and alcoholic
beverages.
Author: Nayak, MS; Dwivedi, R.; Srivastava, SK
Affiliation: Centre for Res. in Microelectron., Banaras Hindu Univ.,
Varanasi, India
Source: Journal of the Institution of Engineers (India) Electronics
and Telecommunication Engineering Division; March 1995; vol.75, p.94-8
Publisher: India : 1995
Doc. Type: Article
Copyright: �2004 IEE
Title: FOWLER-NORDHEIM EMISSION AND ELECTRON TRAPPING IN PURE N2O/SIH(4)
PECVD OXIDE DEPOSITED ON N-2, H-2 AND O-2 PLASMA PRECLEANED SI WAFERS
Author: UPADHYAY, HN; CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: SOLID-STATE ELECTRONICS; SEP 1994; v.37, no.9, p.1671-1672
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Fowler-Nordheim emission and electron trapping in pure N{sub
2}O/SiH{sub 4} PECVD oxide deposited on N{sub 2}, H{sub 2} and O{sub 2} plasma
precleaned Si wafers.
Author: Upadhyay, HN; Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Solid-State Electronics; Sept. 1994; vol.37, no.9, p.1671-2
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE
Title: Ratio method for single component gas analysis using doped
tin oxide thick film sensors.
Author: NAYAK, MS; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, CTR MICROELECTR RES, INST TECHNOL,
DEPT ELECTR ENGN, VARANASI 221055, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; March-June 1994; vol.40, no.2-3, p.93-5
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of annealing and plasma precleaning on the electrical
properties of N{sub 2}O/SiH{sub 4} PECVD oxide as gate material in MOSFETs
and CCDs.
Author: CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, CTR RES MICROELECTR,
DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1993; vol.36, no.7, p.1021-6
Publisher: UK : 1993
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of annealing and plasma precleaning on the electrical
properties of N{sub 2}O/SiH{sub 4} PECVD oxide as gate material in MOSFETs
and CCDs.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Solid-State Electronics; July 1993; vol.36, no.7, p.1021-6
Publisher: UK : 1993
Doc. Type: Article
Copyright: �2004 IEE
Title: Negative bias instability in silicon dioxide films grown
using oxidise-etch-oxidise process.
Author: RAI, BP; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Nov. 1992; vol.35, no.11, p.1645-7
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Silicon wafer cleaning with CF{sub 4}/H{sub 2} plasma and
its effect on the properties of dry thermally grown oxide.
Author: CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Oct. 1992; vol.35, no.10, p.1417-21
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Silicon wafer cleaning with CF{sub 4}/H{sub 2} plasma and
its effect on the properties of dry thermally grown oxide.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Solid-State Electronics; Oct. 1992; vol.35, no.10, p.1417-21
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE
Title: Study of electrical properties of SiO{sub 2} grown over plasma-cleaned
silicon surfaces.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Source: Solid-State Electronics; Dec. 1991; vol.34, no.12, p.1463-5
Publisher: UK : 1991
Doc. Type: Article
Copyright: �2004 IEE
Title: Study of electrical properties of SiO{sub 2} grown over plasma-cleaned
silicon surfaces.
Author: CHANANA, RK; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
CTR RES MICROELECTR, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Dec. 1991; vol.34, no.12, p.1463-5
Publisher: UK : 1991
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A titanium dioxide-based MOS hydrogen sensor.
Author: YADAVA, L; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, CTR RES MICROELECTR,
DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Oct. 1990; vol.33, no.10, p.1229-34
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Hydrogen gas micro sensor based on SiO{sub 2} and TiO{sub
2} systems.
Author: Yadav, L.; Yadava, PK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; May-Aug. 1990; vol.36, no.3-4, p.195-7
Publisher: India : 1990
Doc. Type: Article
Copyright: �2004 IEE
Title: Nature and mechanism for plasma deposition of thin amorphous
films.
Author: Chanana, RK; Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; May-Aug. 1990; vol.36, no.3-4, p.175-82
Publisher: India : 1990
Doc. Type: Article
Copyright: �2004 IEE
Title: Measurement of minority carrier lifetime of solar cells using
surface voltage and current transients.
Author: VISHNOI, A; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; April 1990; vol.33, no.4, p.411-17
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Modified lumped series resistance model of solar cells under
shadow conditions.
Author: SHARMA, AK; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; March 1990; vol.33, no.3, p.309-12
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Combined effect of non-uniform illumination and surface resistance
on the performance of a solar cell.
Author: VISHNOI, A; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: International Journal of Electronics; May 1989; vol.66,
no.5, p.755-74
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Studies of surface voltage and current transients in solar
cells for accurate evaluation of minority carrier lifetime.
Author: VISHNOI, A; GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, VARANASI 221005,
UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1989; vol.32, no.1, p.17-24
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Theoretical investigations of experimentally-observed open-circuit
voltage-decay (OCVD) curves.
Author: GOPAL, R; DWIVEDI, R; SRIVASTAVA, SK
Affiliation: Dept. of Electronics Engng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Nov. 1983; vol.26, no.11, p.1101-9
Publisher: UK : 1983
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Sintered cadmium sulphide photo-voltaic cell.
Author: Dwivedi, R.; Srivastava, SK
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; March 1979; vol.25, no.3, p.70-2
Publisher: India : 1979
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of longitudinal field on shift in cross-over voltage
in SCL conduction for Al-CdS-Au films.
Author: Lal, P.; Dixit, PN; Srivastava, SK
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Source: Solid-State Electronics; June 1976; vol.19, no.6, p.546-7
Publisher: UK : 1976
Doc. Type: Article
Copyright: �2004 IEE
Title: EFFECT OF LONGITUDINAL-FIELD ON SHIFT IN CROSSOVER VOLTAGE
IN SCL CONDUCTION FOR AL-CDS-AU FILMS
Author: LAL, P; DIXIT, PN; SRIVASTAVA, SK
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, INDIA
Source: SOLID-STATE ELECTRONICS; 1976; v.19, no.6, p.546-547
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Doc. Type: Article; Note
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Tunnel-induced impact ionization in the metal-thin-insulator-semiconductor-metal
system.
Author: DIXIT, PN; LAL, P; SRIVASTAVA, SK
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
RADIO & ELECTR RES LAB, VARANASI, INDIA
Source: Physica Status Solidi A; 16 July 1975; vol.30, no.1, p.337-43
Publisher: East Germany : 1975
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Conductivity of thin cadmium sulphide films grown under a
longitudinal electric field.
Author: LAL, P; DIXIT, PN; SRIVASTAVA, SK
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, INDIA
Source: Thin Solid Films; July 1975; vol.28, no.1, p.L17-20
Publisher: Switzerland : 1975
Doc. Type: Article; Letter
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Memory switching of thin CdS films.
Author: LAL, P; DIXIT, PN; SRIVASTAVA, SK
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
RADIO & ELECTR RES LAB, VARANASI 221005, INDIA
Source: Current Science; 20 April 1975; vol.44, no.8, p.254-6
Publisher: India : 1975
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Electrical memory in aluminium-cadmium sulphide-gold diodes.
Author: Srivastava, SK; Lal, P.
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Engineers (India) Electronics
and Telecommunication Engineering Division; May 1973; vol.53, pt.ET5, p.186-7
Publisher: India : 1973
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of density gradient of deep traps on Schottky barrier
capacitance in thin films.
Author: SRIVASTA*, SK; BHATTACH*, R
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: International Journal of Electronics; Sept. 1971; vol.31,
no.3, p.257-64
Publisher: UK : 1971
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Space-charge-limited currents in hollow crystals of cadmium
sulphide.
Author: SRIVASTA*, SK; BHATTACH*, R
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: International Journal of Electronics; March 1971; vol.30,
no.3, p.287-9
Publisher: UK : 1971
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Temperature dependence of current decay and trap evaluation
in thin films of CdS.
Author: SRIVASTA*, SK; RATNA, V; BHATTACH*, R
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: International Journal of Electronics; Sept. 1970; vol.29,
no.3, p.269-74
Publisher: UK : 1970
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Temperature dependence of space-charge limited current in
thin films of CdS.
Author: SRIVASTA*, SK; BHATTACH*, R
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: International Journal of Electronics; Sept. 1969; vol.27,
no.3, p.237-40
Publisher: UK : 1969
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.