R. U. Khan

R. U. Khan received the B.E., M.E., and Ph.D. degrees in electronics engineering from the Institute of Technology, Banaras Hindu University, Varanasi, India, in 1971, 1973, and 1987, respectively. He joined the Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, (India) as a Lecturer in 1980. The present areas of interest are millimeter-wave solid-state devices, MESFETs, MOSFETs, and III-V semiconductor compounds. He has published more than 30 papers in journals and conference proceedings. Dr. Khan received the Foundation life membership of the Semiconductor Society of India.

Selected Research Publications

Title: Light dependence of SOI MOSFET with nonuniform doping profile.
Author: Abraham, GK; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; July 2000; vol.47, no.7, p.1469-71
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illumination.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; Feb. 2000; vol.18, no.2, p.221-9
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Analysis of GaAsOPFET with improved optical absorption under back illumination
Author: Roy, NS; Pal, BB; Khan, RU
Institution: Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar Pradesh, India
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 1999; v.46, no.12, p.2350-2353
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: GaAsOPFET characterisation considering concentration dependent carrier mobility and life time
Author: Mitra, H; Lohani, RB; Shubha; Khan, RU; Pal, BB
Institution: Diesel Locomot Works, Varanasi 221004, Uttar Pradesh, India; Diesel Locomot Works, Varanasi 221004, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IETE JOURNAL OF RESEARCH; SEP-DEC 1999; v.45, no.5-6, p.333-339
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate.
Author: Shubha; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Jan. 1998; vol.45, no.1, p.78-84
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Optical effect in InAlAs/InGaAs/InP MODFET.
Author: Mitra, H; Pal, BB; Singh, S; Khan, RU
Affiliation: D.L.W., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India; Udai Pratap Coll, Dept Phys, Varanasi 221002, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Jan. 1998; vol.45, no.1, p.68-77
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Noise characteristics of a superlattice avalanche region IMPATT diode
Author: Rao, KSVSNP; Pal, BB; Khan, RU
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; JAN-FEB 1996; v.42, no.1, p.47-51
Publisher: INST ELECTR TELECOMMUN ENGRS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.

Title: Noise characteristics of a superlattice avalanche region IMPATT diode.
Author: Prasad Rao, KSV SN; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan.-Feb. 1996; vol.42, no.1, p.47-51
Publisher: India : Instn. Electron. & Telecommun. Eng, 1996
Doc. Type: Article
Copyright: �2004 IEE

Title: Frequency dependent behaviour of an ion implanted GaAs OPFET considering the photovoltaic effect and the gate depletion width modulation.
Author: PAL, BB; SHUBHA; KUMAR, KH; KHAN, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; May 1995; vol.38, no.5, p.1097-102
Publisher: UK : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A superlattice avalanche region IMPATT diode.
Author: Chandramohan, KK; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept.-Dec. 1994; vol.40, no.5-6, p.261-5
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: Theory of the MM wave IMPATT diode: A review.
Author: PAL, BB; KHAN, RU; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan.-Feb. 1994; vol.40, no.1, p.35-42
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.

Title: A new solid-state device as a source of power in mm wave.
Author: Pal, BB; Khan, RU; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept.-Oct. 1986; vol.32, no.5, p.397-402
Publisher: India : 1986
Doc. Type: Article
Copyright: �2004 IEE

Title: A high efficiency high power DOVATT diode in the X-band.
Author: Khan, RU; Chaudhary, SC; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Sept. 1984; vol.30, no.5, p.121-4
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE

Title: Effect of impurity concentration and biasing-current density on the performance of a new DDR heterojunction IMPATT diode.
Author: Pal, BB; Khan, RU
Affiliation: Dept of Electronics Engng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Jan. 1984; vol.30, no.1, p.22-4
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE

Title: A comparative study of the properties of single velocity and double velocity hetero-junction IMPATT diodes.
Author: Khan, RU; Pal, BB
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication Engineers; Feb. 1983; vol.29, no.2, p.68-71
Publisher: India : 1983
Doc. Type: Article
Copyright: �2004 IEE