| 1. EFFECT OF
ILLUMINATION ON THE CHARACTERISTICS OF A PROPOSED HETERO-MIS DIODE
CHAKRABARTI, P; ABRAHAM, BR; DHINGRA, A; DAS, A; SHARAN, BS; MAHESHWARI, V Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; MAR 1992; v.39, no.3, p.507-514 |
| 2. MITATT MODE IN
DDR HETEROSTRUCTURE IMPATT KHAN, RU; CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.303-309 |
| 3. A NEW INFRARED
AVALANCHE PHOTODIODE FOR LONG-DISTANCE FIBER OPTIC COMMUNICATION
CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1988; v.31, no.1, p.1-3 |
| 4. NOISE
CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4, p.331-334 |
| 5. A LONG
WAVELENGTH AVALANCHE PHOTODETECTOR FOR OPTICAL COMMUNICATIONS
CHAKRABARTI, P; ABRAHAM, BR; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.7, p.521-524 |
| 6. OPTICAL
CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.7, p.675-679 |
| 7. THEORETICAL
CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE PAL, BB; CHAKRABARTI, P Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3, p.173-177 |
| 8. EFFECT OF
OPTICAL RADIATION IN A PHOTO-DOVATT CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.311-315 |
| 9. EFFECT OF
ILLUMINATION ON THE CAPACITANCE OF A PROPOSED MIS DIODE
CHAKRABARTI, P; ABRAHAM, BR; DAS, A; SHARAN, BS; MAHESHWARI, V Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; DEC 16 1991; v.128, no.2, p.513-520 |
| 10. NOISE
CHARACTERISTICS OF A NEW HETEROJUNCTION AVALANCHE PHOTODIODE
CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB Source: IEE PROCEEDINGS-J OPTOELECTRONICS ; 1990; v.137, no.2, p.97-100 |
| 11. LARGE-SIGNAL
BEHAVIOR OF DOUBLE-AVALANCHE-REGION IMPATT DIODES CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.2, p.147-153 |
| 12. EFFECT OF
INTENSITY-MODULATED OPTICAL RADIATION ON THE DC CHARACTERISTICS OF
GAAS-MESFETS CHAKRABARTI, P; MISHRA, BK; AGRAWALLA, SK Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; MAY 16 1994; v.143, no.1, p.169-178 |
| 13. THEORY OF THE
MM WAVE IMPATT DIODE - A REVIEW PAL, BB; KHAN, RU; CHAKRABARTI, P Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS ; JAN-FEB 1994; v.40, no.1, p.35-42 |
| 14. EFFECT OF
INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD PAL, BB; CHAKRABARTI, P Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1987; v.134, no.4, p.C 231-C 231 |
| 15.
COMPUTER-SIMULATION OF ION-IMPLANTED DAR IMPATT AROUND 94-GHZ UNDER
STEADY-STATE CONDITION CHAKRABARTI, P; PAL, BB Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 1986; v.94, no.1, p.305-313 Conference: |
| 16. OPTICAL
EFFECTS IN MODULATION-DOPED-FIELD-EFFECT-TRANSISTOR SINGHAL, A; MISHRA, A; CHAKRABARTI, P Source: SOLID-STATE ELECTRONICS ; 1990; v.33, no.9, p.1214-1216 |
| 17. EFFECT OF
ILLUMINATION ON THE CHARACTERISTICS OF A PROPOSED HETERO-MIS DIODE
CHAKRABARTI, P; ABRAHAM, BR; DHINGRA, A; DAS, A; SHARAN, BS; MAHESHWARI, V Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; MAR 1992; v.39, no.3, p.507-514 |
| 18. A LONG
WAVELENGTH AVALANCHE PHOTODETECTOR FOR OPTICAL COMMUNICATIONS
CHAKRABARTI, P; ABRAHAM, BR; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.7, p.521-524 |
| 19. EFFECT OF
ILLUMINATION ON THE CAPACITANCE OF A PROPOSED MIS DIODE
CHAKRABARTI, P; ABRAHAM, BR; DAS, A; SHARAN, BS; MAHESHWARI, V Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; DEC 16 1991; v.128, no.2, p.513-520 |
| 20. OPTICALLY
CONTROLLED CHARACTERISTICS OF TEGFET CHAKRABARTI, P; PURI, M; SINGHAL, A; MISHRA, A Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 1990; v.122, no.1, p.405-412 |
| 21. AN IMPROVED
MODEL OF ION-IMPLANTED GAAS OPFET CHAKRABARTI, P; SHRESTHA, NL; SRIVASTAVA, S; KHEMKA, V Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; SEP 1992; v.39, no.9, p.2050-2059 |
| 22. Numerical
simulation of an ion-implanted GaAs OPFET Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; OCT 1998; v.46, no.10, pt.1, p.1360-1366 |
| 23. An analytical
model of GaAs OPFET Chakrabarti, P; Gupta, A; Khan, NA Source: SOLID-STATE ELECTRONICS; OCT 1996; v.39, no.10, p.1481-1490 |
| 24. Novel
velocity electric field relation for modelling of compound semiconductor
field-effect transistors Madheswaran, M; Madhavan, A; Chakrabarti, P Source: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS; JUN 1998; v.145, no.3, p.170-174 |
| 25. Intensity
modulated photoeffects in InP-MIS capacitors Madheswaran, M; Chakrabarti, P Source: IEE PROCEEDINGS-OPTOELECTRONICS; AUG 1996; v.143, no.4, p.248-251 |
| 26.
Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET
photodetector Madheswaran, M; Rajamani, V; Chakrabarti, P Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS; AUG 20 2000; v.26, no.4, p.247-254 |
| 27. Noise
analysis of InP/InGaAs superlaftice avalanche photodiode Rajamani, V; Madheswaran, M; Chakrabarti, P Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.215-220 |
| 28. Numerical
simulation for estimating the optically controlled characteristics of an
ion-implanted Si-MESFET Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA; Rajamani, V Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.205-214 |
| 29. Frequency
dependent characteristics of an optically controlled InP MIS capacitor
Madheswaran, M; Chakrabarti, P Source: SOLID-STATE ELECTRONICS; MAY 1998; v.42, no.5, p.795-801 |
| 30. Large signal
model of an optically controlled GaAs IMPATT diode Akhtar, MJ; Madheswaran, M; Chakrabarti, P Source: IETE JOURNAL OF RESEARCH; JUL-AUG 1997; v.43, no.4, p.319-325 |
| 31.
SPICE-compatible microwave model of an optically controlled high
electron mobility transistor Chakrabarti, P; Mishra, BK; Madheswaran, M Source: INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING; NOV 1996; v.6, no.6, p.399-410 |
| 32. Effect of
surface states on the electrical and optical characteristics of InP MIS
capacitor Chakrabarti, P; Madheswaran, M; Mishra, BK; Singatwaria, S; Tandon, A; Ghosh, B Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH; JUN 16 1996; v.155, no.2, p.389-398 |
| 33.
INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODE BATRA, S; LAHIRI, A; CHAKRABARTI, P Source: ELECTRONICS LETTERS ; 1988; v.24, no.15, p.964-965 |
| 34. Effect of
ionizing radiation on MOS capacitors Chauhan, RK; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; MAR 2002; v.33, no.3, p.197-203 |
| 35. A proposed
OEIC receiver using MESFET photodetector Chakrabarti, P; Rajamani, V Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; APR 1999; v.17, no.4, p.659-668 |
| 36. Noise
performance of an InP/InGaAs superlattice avalanche photodiode
Rajamani, V; Chakrabarti, P Source: OPTICAL AND QUANTUM ELECTRONICS; JAN 1999; v.31, no.1, p.69-76 |
| 37.
INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODE - REPLY
BATRA, S; LAHIRI, A; CHAKRABARTI, P Source: ELECTRONICS LETTERS ; 1988; v.24, no.22, p.1399-1400 |
| 38. A proposed
ultra low-noise optical receiver for 1.55 mu m applications
Rajamani, V; Chakrabarti, P Source: OPTICAL AND QUANTUM ELECTRONICS; FEB 2003; v.35, no.3, p.195-209 |
| 39. A
pseudo-two-dimensional model of an n-channel MOSFET under the influence of
ionizing radiation Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; SEP 2002; v.17, no.9, p.961-968 |
| 40. Influence of
ionizing radiation on the performance of MIS solar cells: a theoretical
model Chauhan, RK; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; JUL 2002; v.89, no.7, p.525-535 |
| 41. Ionizing
radiation-induced effects in an ion-implanted MOSFET: a two-dimensional
analytical model Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; APR 2002; v.89, no.4, p.277-288 |
| 42. Influence of
ionising radiation on the performance of CMOS inverter Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; JUL 2001; v.32, no.7, p.615-620 |
| 43.
Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET
photodetector Madheswaran, M; Rajamani, V; Chakrabarti, P Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS; AUG 20 2000; v.26, no.4, p.247-254 |
| 44. Noise
analysis of InP/InGaAs superlaftice avalanche photodiode Rajamani, V; Madheswaran, M; Chakrabarti, P Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.215-220 |
| 45. Numerical
simulation for estimating the optically controlled characteristics of an
ion-implanted Si-MESFET Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA; Rajamani, V Source: IETE JOURNAL OF RESEARCH; JUL-AUG 2000; v.46, no.4, p.205-214 |
| 46. EFFECT OF
RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN
ION-IMPLANTED GAAS-MESFET CHAKRABARTI, P Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1991; v.38, no.11, p.2578-2578 |
| 47. OPTICALLY
CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED SILICON MESFET -
COMMENT CHAKRABARTI, P Source: SOLID-STATE ELECTRONICS ; 1991; v.34, no.10, p.1185-1185 |
| 48. Effect of
ionising radiation on the characteristics of a MOSFET Dasgupta, S; Chakrabarti, P Source: IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS; APR 2000; v.147, no.2, p.133-138 |
| 49. A
pseudo-two-dimensional model of an n-channel MOSFET under the influence of
ionizing radiation Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; SEP 2002; v.17, no.9, p.961-968 |
| 50. Ionizing
radiation-induced effects in an ion-implanted MOSFET: a two-dimensional
analytical model Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; APR 2002; v.89, no.4, p.277-288 |
| 51. Influence of
ionising radiation on the performance of CMOS inverter Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; JUL 2001; v.32, no.7, p.615-620 |
| 52.
Semi-numerical modelling of an n-channel irradiated MOSFET
Dasgupta, S; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; MAR 2001; v.88, no.3, p.301-313 |
| 53.
NUMERICAL-MODEL OF A PROPOSED DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING
DIODE FOR MIDINFRARED APPLICATIONS CHAKRABARTI, P; SAXENA, V; DAS, SK; RAO, YS; LAL, BB Source: OPTICAL AND QUANTUM ELECTRONICS ; AUG 1994; v.26, no.8, p.885-897 |
| 54. OPTICALLY
CONTROLLED CHARACTERISTICS OF A NEW HETEROJUNCTION FIELD-EFFECT
TRANSISTOR CHAKRABARTI, P; PAL, J Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; FEB 1992; v.54, no.2, p.186-190 |
| 55. CHARGE-SHEET
MODEL OF A PROPOSED MISFET PHOTODETECTOR CHAKRABARTI, P; GOPAL, IV Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; DEC 16 1991; v.128, no.2, p.521-530 |
| 56. Effect of
ionizing radiation on MOS capacitors Chauhan, RK; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; MAR 2002; v.33, no.3, p.197-203 |
| 57. Analysis and
simulation of a mid-infrared
P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double
heterojunction photodetector grown by LPE Chakrabarti, P; Krier, A; Morgan, AF Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; OCT 2003; v.50, no.10, p.2049-2058 |
| 58.
Double-heterojunction photodetector for midinfrared applications:
theoretical model and experimental results Chakrabarti, P; Krier, A; Morgan, AF Source: OPTICAL ENGINEERING; SEP 2003; v.42, no.9, p.2614-2623 |
| 59. Noise
modeling of an InP/InGaAs heterojunction bipolar phototransistor
Chakrabarti, P; Agrawal, NK; Kalra, P; Agrawal, S; Gupta, G Source: OPTICAL ENGINEERING; APR 2003; v.42, no.4, p.939-947 |
| 60. Noise
analysis of an optically controlled metal semiconductor field effect
transistor at microwave frequencies Chakrabarti, P; Tiwari, BN; Kumar, S Source: OPTICAL ENGINEERING; FEB 2003; v.42, no.2, p.447-455 |
| 61. A
pseudo-two-dimensional model of an n-channel MOSFET under the influence of
ionizing radiation Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY; SEP 2002; v.17, no.9, p.961-968 |
| 62. Influence of
ionizing radiation on the performance of MIS solar cells: a theoretical
model Chauhan, RK; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; JUL 2002; v.89, no.7, p.525-535 |
| 63. Noise
modeling of an optically controlled MESFET (OPFET) Chakrabarti, P; Jha, V; Kalra, P; Gupta, G Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS; APR 20 2002; v.33, no.2, p.79-83 |
| 64. Ionizing
radiation-induced effects in an ion-implanted MOSFET: a two-dimensional
analytical model Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P Source: INTERNATIONAL JOURNAL OF ELECTRONICS; APR 2002; v.89, no.4, p.277-288 |
| 65. Influence of
ionising radiation on the performance of CMOS inverter Chauhan, RK; Dasgupta, S; Chakrabarti, P Source: MICROELECTRONICS JOURNAL; JUL 2001; v.32, no.7, p.615-620 |
| 66. MICROWAVE
MODEL OF AN OPTICALLY CONTROLLED GAAS-MESFET CHAKRABARTI, P; MISHRA, BK; KUMAR, KS; SHRESTHA, SK Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS ; APR 20 1995; v.8, no.6, p.296-300 |
|
| 67. OPTICALLY
CONTROLLED CHARACTERISTICS OF AN INGAAS MISFET CHAKRABARTI, P; MISHRA, BK; REDDY, YP; PRAKASH, S Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; JAN 16 1995; v.147, no.1, p.277-291 |
|
| 68. OPTICALLY
CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED HETERO-MIS CAPACITOR
CHAKRABARTI, P; CHANDRA, A; GUPTA, V; SHAH, HS; KUMAR, YR Source: IEE PROCEEDINGS-OPTOELECTRONICS ; FEB 1994; v.141, no.1, p.27-32 |
|
| 69.
NUMERICAL-SIMULATION FOR ESTIMATING C-V CHARACTERISTICS OF MODFETS
UNDER ILLUMINATION CHAKRABARTI, P; KUMAR, T; KUMAR, A; PRASAD, BRN Source: SOLID-STATE ELECTRONICS ; FEB 1992; v.35, no.2, p.225-227 |
| 70. IV
CHARACTERISTICS OF AN OPTICALLY CONTROLLED SI-MESFET CHAKRABARTI, P; ANAND, R; RAO, VS Source: SOLID-STATE ELECTRONICS ; APR 1992; v.35, no.4, p.587-592 |
Other Publications
Title: Noise behavior of an optically controlled GaAs MESFET.
Author: Chakrabarti, P; Tiwari, BN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Def Avion Res Estab, Bangalore 560075, Karnataka, India; Def
Avion Res Estab, Bangalore 560075, Karnataka, India; Banaras Hindu Univ, Dept
Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; Feb. 2004; vol.22, no.2,
p.534-42
Publisher: USA : IEEE, 2004
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Theoretical analysis of a proposed InAs/InAsSb heterojunction
photodetector for mid-infrared (MIR) applications.
Author: Lal, RK; Jain, M; Gupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEE Proceedings-Optoelectronics; 12 Dec. 2003; vol.150, no.6,
p.527-33
Publisher: UK : IEE, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Analysis and simulation of a mid-infrared P{sup +}-InAs{sub
0.55}Sb{sub 0.15}P{sub 0.30}/n{sup 0}-InAs{sub 0.89}Sb{sub 0.}$ d1{sub 1}/N{sup
+}-InAs{sub 0.55}Sb{sub 0.15}P{sub 0.30} double heterojunction photodetector
grown by LPE.
Author: Chakrabarti, P.; Krier, A.; Morgan, AF
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: IEEE Transactions on Electron Devices; Oct. 2003; vol.50, no.10,
p.2049-58
Publisher: USA : IEEE, 2003
Doc. Type: Article
Copyright: �2004 IEE
Title: Analysis and simulation of a mid-infrared
P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double
heterojunction photodetector grown by LPE
Author: Chakrabarti, P; Krier, A; Morgan, AF
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India; Univ Lancaster, Dept Phys, Lancaster LA1
4YB, England
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; OCT 2003; v.50, no.10,
p.2049-2058
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: An analytical model of a double-hetero structure mid-infrared
photodetector.
Author: Lal, R; Jain, M; Gupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Infrared Physics & Technology; April 2003; vol.44, no.2, p.125-32
Publisher: Netherlands : Elsevier, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise modeling of an InP/InGaAs heterojunction bipolar
phototransistor.
Author: Chakrabarti, P; Agrawal, NK; Kalra, P; Agrawal, S; Gupta, G
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Inst. of
Technol., India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol,
Varanasi 221005, Uttar Pradesh, India
Source: Optical Engineering; April 2003; vol.42, no.4, p.939-47
Publisher: USA : SPIE, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A proposed ultra low-noise optical receiver for 1.55 mu m
applications.
Author: Rajamani, V; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Optical and Quantum Electronics; Feb. 2003; vol.35, no.3,
p.195-209
Publisher: Netherlands : Kluwer Academic Publishers, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise analysis of an optically controlled metal semiconductor
field effect transistor at microwave frequencies.
Author: Chakrabarti, P; Tiwari, BN; Kumar, S
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol,
Varanasi 221005, Uttar Pradesh, India
Source: Optical Engineering; Feb. 2003; vol.42, no.2, p.447-55
Publisher: USA : SPIE, 2003
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optical and electrical characterisation of an p{sup +}-InAs{sub
0.96}Sb{sub 0.04}/n{sup 0}-InAs{sub 0.96}Sb{sub 0.04}/n{sup +}-In As
photodetector for mid-infrared application.
Author: Chakrabarti, P.; Krier, A.; Huang, XL; Fenge, P.; Lal, RK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics
Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil; p.87-92 vol.1
Conference: 2003 SBMO/IEEE MTT-S International Microwave and
Optoelectronics Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil
Editor: Kalinowski, HJ; Romero, MA; Barbin, SE
Publisher: Piscataway, NJ, USA : IEEE, 2003
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: A pseudo-two-dimensional model of an n-channel MOSFET under the
influence of ionizing radiation.
Author: Chauhan, RK; Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol,
Varanasi 221005, Uttar Pradesh, India
Source: Semiconductor Science and Technology; Sept. 2002; vol.17, no.9,
p.961-8
Publisher: UK : IOP Publishing, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Influence of ionizing radiation on the performance of MIS solar
cells: a theoretical model.
Author: Chauhan, RK; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: International Journal of Electronics; July 2002; vol.89, no.7,
p.525-35
Publisher: UK : Taylor & Francis, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise modeling of an optically controlled MESFET (OPFET).
Author: Chakrabarti, P; Jha, V; Kalra, P; Gupta, G
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Microwave and Optical Technology Letters; 20 April 2002; vol.33,
no.2, p.79-83
Publisher: USA : Wiley, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Ionizing radiation-induced effects in an ion-implanted MOSFET: a
two-dimensional analytical model.
Author: Dasgupta, S; Chauhan, RK; Singh, G; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: International Journal of Electronics; April 2002; vol.89, no.4,
p.277-88
Publisher: UK : Taylor & Francis, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of ionizing radiation on MOS capacitors.
Author: Chauhan, RK; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Microelectronics Journal; March 2002; vol.33, no.3, p.197-203
Publisher: UK : Elsevier, 2002
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Theoretical analysis of an InAs/InAsSb heterojunction
photodetector for mid-infrared (MIR) applications.
Author: Chakrabarti, P.; Lal, RK; Jain, M.; Gupta, S.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Eleventh International Workshop on the Physics of Semiconductor
Devices, 11-15 Dec. 2001, Delhi, India; p.1064-8 vol.2
Conference: Eleventh International Workshop on the Physics of
Semiconductor Devices, 11-15 Dec. 2001, Delhi, India
Editor: Kumar, V.; Basu, PK
Publisher: Washington, DC, USA : SPIE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Theoretical analysis of room temperature InAs{sub 0.89}Sb{sub
0.11} mid-infrared (MIR) photodetector for CO detection.
Author: Chakrabarti, P.; Lal, RK; Jain, M.; Gupta, S.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: 23rd International Conference on Microelectronics (MIEL 2002),
12-15 May 2002, Nis, Yugoslavia; p.331-4 vol.1
Conference: 23rd International Conference on Microelectronics (MIEL
2002), 12-15 May 2002, Nis, Yugoslavia
Publisher: Piscataway, NJ, USA : IEEE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Influence of ionising radiation on the performance of CMOS
inverter.
Author: Chauhan, RK; Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Microelectronics Journal; July 2001; vol.32, no.7, p.615-20
Publisher: UK : Elsevier, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Semi-numerical modelling of an n-channel irradiated MOSFET.
Author: Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Dept Elect Engn, Varanasi 221005, Uttar
Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Varanasi 221005, Uttar
Pradesh, India
Source: International Journal of Electronics; March 2001; vol.88, no.3,
p.301-13
Publisher: UK : Taylor & Francis, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET
photodetector.
Author: Madheswaran, M; Rajamani, V; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Microwave and Optical Technology Letters; 20 Aug. 2000; vol.26,
no.4, p.247-54
Publisher: USA : Wiley, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise analysis of InP/InGaAs superlattice avalanche photodiode.
Author: Rajamani, V; Madheswaran, M; Chakrabarti, P
Affiliation: Dept. of Electron. & Commun. Eng., Mohamed Sathak Eng.
Coll., Kilakkari, India
Institution: Mohamed Sathak Engn Coll, Dept Elect & Commun Engn,
Kilakkari 623806, India; Mohamed Sathak Engn Coll, Dept Elect & Commun Engn,
Kilakkari 623806, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IETE Journal of Research; July-Aug. 2000; vol.46, no.4, p.215-20
Publisher: India : Instn. Electron. & Telecommun. Eng, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Numerical simulation for estimating the optically controlled
characteristics of an ion-implanted Si-MESFET.
Author: Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA; Rajamani, V
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India; Mohamed Sathak Engn Coll, Dept Elect &
Commun Engn, Kilakkari 623806, India
Source: IETE Journal of Research; July-Aug. 2000; vol.46, no.4, p.205-14
Publisher: India : Instn. Electron. & Telecommun. Eng, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of ionising radiation on the characteristics of a MOSFET.
Author: Dasgupta, S; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEE Proceedings-Circuits, Devices and Systems; April 2000;
vol.147, no.2, p.133-8
Publisher: UK : IEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A proposed OEIC receiver using MESFET photodetector.
Author: Chakrabarti, P; Rajamani, V
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; April 1999; vol.17, no.4,
p.659-68
Publisher: USA : IEEE, 1999
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise performance of an InP/lnGaAs superlattice avalanche
photodiode.
Author: Rajamani, V.; Chakrabarti, P.
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Optical and Quantum Electronics; Jan. 1999; vol.31, no.1, p.69-76
Publisher: Netherlands : Kluwer Academic Publishers, 1999
Doc. Type: Article
Copyright: �2004 IEE
Title: Noise performance of an InP/InGaAs superlattice avalanche
photodiode
Author: Rajamani, V; Chakrabarti, P
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: OPTICAL AND QUANTUM ELECTRONICS; JAN 1999; v.31, no.1, p.69-76
Publisher: KLUWER ACADEMIC PUBL
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Numerical simulation of an ion-implanted GaAs OPFET.
Author: Chakrabarti, P; Madheswaran, M; Gupta, A; Khan, NA
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol,
Varanasi 221005, Uttar Pradesh, India; Mohamed Sathak Engn Coll, Dept Elect &
Commun Engn, Karaikkudi 623806, Tamil Nadu, India; Hindalco, Renukoot 231217,
India; Birla Horizon, Noida 201305, India
Source: IEEE Transactions on Microwave Theory and Techniques; Oct. 1998;
vol.46, no.10, pt.1, p.1360-6
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Novel velocity-electric field relation for modelling of compound
semiconductor field-effect transistors.
Author: Madheswaran, M; Madhavan, A; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEE Proceedings-Circuits, Devices and Systems; June 1998;
vol.145, no.3, p.170-4
Publisher: UK : IEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Frequency dependent characteristics of an optically controlled InP
MIS capacitor.
Author: Madheswaran, M; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Solid-State Electronics; May 1998; vol.42, no.5, p.795-801
Publisher: UK : Elsevier, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A low-noise photodetector for MIR application.
Author: Rajamani, V.; Madheswaran, M.; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Communications in Instrumentation; Oct.-Dec. 1997; vol.5, no.4,
p.233-44
Publisher: India : Central Sci. Instrum Organ, 1997
Doc. Type: Article
Copyright: �2004 IEE
Title: Large signal model of an optically controlled GaAs IMPATT diode
Author: Akhtar, MJ; Madheswaran, M; Chakrabarti, P
Institution: Cent Elect Engn Res Inst, Microwave Tubes Area, Pilani
333031, Rajasthan, India; Cent Elect Engn Res Inst, Microwave Tubes Area, Pilani
333031, Rajasthan, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IETE JOURNAL OF RESEARCH; JUL-AUG 1997; v.43, no.4, p.319-325
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: A proposed velocity-electric field relationship for modeling
compound semiconductor devices.
Author: Chakrabarti, P.; Madheswaran, M.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: 1997 21st International Conference on Microelectronics.
Proceedings, 14-17 Sept. 1997, Nis, Yugoslavia; p.173-6 vol.1
Conference: 1997 21st International Conference on Microelectronics.
Proceedings, 14-17 Sept. 1997, Nis, Yugoslavia
Publisher: New York, NY, USA : IEEE, 1997
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: SPICE-compatible microwave model of an optically controlled high
electron mobility transistor.
Author: Chakrabarti, P; Mishra, BK; Madheswaran, M
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, CTR ADV
STUDY, VARANASI 221005, UTTAR PRADESH, INDIA
Source: International Journal of Microwave and Millimeter-Wave
Computer-Aided Engineering; Nov. 1996; vol.6, no.6, p.399-410
Publisher: UK : Wiley, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: An analytical model of GaAs OPFET.
Author: Chakrabarti, P; Gupta, A; Khan, NA
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; BIRLA INST TECHNOL, DEPT ELECT & ELECT ENGN,
RANCHI 835215, BIHAR, INDIA
Source: Solid-State Electronics; Oct. 1996; vol.39, no.10, p.1481-90
Publisher: UK : Elsevier, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Intensity modulated photoeffects in InP-MIS capacitors.
Author: Madheswaran, M; Chakrabarti, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings-Optoelectronics; Aug. 1996; vol.143, no.4,
p.248-51
Publisher: UK : IEE, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of surface states on the electrical and optical
characteristics of InP MIS capacitor.
Author: Chakrabarti, P; Madheswaran, M; Mishra, BK; Singatwaria, S;
Tandon, A; Ghosh, B
Affiliation: Dept. of Electr. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 June 1996; vol.155, no.2, p.389-98
Publisher: Germany : Akademie Verlag, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Frequency response of time-varying photocapacitance of an InP:Fe
MIS capacitor.
Author: Chakrabarti, P.; Madheswaran, M.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: International Topical Meeting on Microwave Photonics, 3-5 Dec.
1996, Kyoto, Japan; p.133-6
Conference: International Topical Meeting on Microwave Photonics, 3-5
Dec. 1996, Kyoto, Japan
Publisher: New York, NY, USA : IEEE, 1996
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: An InP:Fe photocapacitive MIS detector.
Author: Madheswaran, M.; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: 1996 Asia-Pacific Microwave Conference (APMC'96), 17-20 Dec.
1996, New Delhi, India; p.884-7 vol.3
Conference: 1996 Asia-Pacific Microwave Conference (APMC'96), 17-20 Dec.
1996, New Delhi, India
Editor: Gupta, RS
Publisher: New Delhi, India : R.S. Gupta, Univ. Delhi South Campus, 1996
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Fabrication and characterization of an optically controlled MOS
capacitor.
Author: Chakrabarti, P.; Madheswaran, M.; Lahiri, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India;
p.238-40
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Microwave model of an optically controlled GaAs MESFET.
Author: CHAKRABARTI, P; MISHRA, BK; KUMAR, KS; SHRESTHA, SK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Microwave and Optical Technology Letters; 20 April 1995; vol.8,
no.6, p.296-300
Publisher: USA : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optically controlled characteristics of an InGaAs MISFET.
Author: CHAKRABARTI, P; MISHRA, BK; REDDY, YP; PRAKASH, S
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 Jan. 1995; vol.147, no.1, p.277-91
Publisher: Germany : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: An optically controlled InP MIS capacitor.
Author: MISHRA, BK; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1995; vol.38, no.1, p.255-7
Publisher: UK : 1995
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Theory of the MM wave IMPATT diode: A review.
Author: PAL, BB; KHAN, RU; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Jan.-Feb. 1994; vol.40, no.1, p.35-42
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optically controlled characteristics of an InP-MISFET.
Author: Chakrabarti, P.; Mishra, BK
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: APSYM - CUSAT - 94. National Symposium on Antennas and
Propagation, 17-19 Jan. 1994, Kochin, India; p.240-3
Conference: APSYM - CUSAT - 94. National Symposium on Antennas and
Propagation, 17-19 Jan. 1994, Kochin, India
Editor: Nair, KG; Sridhar, CS
Publisher: Cochin, India : Cochin Univ. Sci. & Technol, 1994
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: An optically controlled MOS capacitor.
Author: Chakrabarti, P.; Gupta, N.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: APSYM - CUSAT - 94. National Symposium on Antennas and
Propagation, 17-19 Jan. 1994, Kochin, India; p.236-9
Conference: APSYM - CUSAT - 94. National Symposium on Antennas and
Propagation, 17-19 Jan. 1994, Kochin, India
Editor: Nair, KG; Sridhar, CS
Publisher: Cochin, India : Cochin Univ. Sci. & Technol, 1994
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Noise characteristics of a new heterojunction avalanche
photodiode.
Author: CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2,
p.97-100
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A long wavelength avalanche photodetector for optical
communications.
Author: CHAKRABARTI, P; ABRAHAM, BR; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1989; vol.32, no.7, p.521-4
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4,
p.331-334
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: A new infrared avalanche photodiode for long distance fiber optic
communication.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1988; vol.31, no.1, p.1-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optical characteristics of a superlattice avalanche photodiode.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1987; vol.30, no.7, p.675-9
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of optical radiation in a photo-DOVATT.
Author: Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42,
no.4, p.311-15
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: MITATT mode in DDR heterostructure Impatt.
Author: Khan, RU; Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42,
no.4, p.303-9
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Theoretical characterisation of a superlattice avalanche
photodiode.
Author: Pal, BB; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Applied Physics A (Solids and Surfaces); March 1987; vol.A42,
no.3, p.173-7
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Large-signal behaviour of double-avalanche-region IMPATT diodes.
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Feb. 1987; vol.30, no.2, p.147-54
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: EFFECT OF INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, FAC TOXICOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; APR 1987; v.134, no.4,
p.C231-C231
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.
Title: MITATT MODE IN DDR HETEROSTRUCTURE IMPATT
Author: KHAN, RU; CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4,
p.303-309
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: EFFECT OF OPTICAL RADIATION IN A PHOTO-DOVATT
Author: CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4,
p.311-315
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE
PHOTODIODE
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3,
p.173-177
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: A new solid-state device as a source of power in mm wave.
Author: Pal, BB; Khan, RU; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Sept.-Oct. 1986; vol.32, no.5, p.397-402
Publisher: India : 1986
Doc. Type: Article
Copyright: �2004 IEE
Title: Computer simulation of ion-implanted DAR Impatt around 94 GHz
under steady state condition.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 March 1986; vol.94, no.1, p.305-13
Conference: Working Meeting on Ion Implantation in Semiconductors and
Other Materials and Ion Beam Devices, 13-18 Oct. 1985, Balatonaliga, Hungary
Publisher: East Germany : 1986
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: EFFECT OF SUPPLEMENTATION WITH EXOGENOUS FATTY-ACID ON THE
BIOLOGICAL PROPERTIES OF A FATTY-ACID REQUIRING AUXOTROPH OF
SALMONELLA-TYPHIMURIUM
Author: DEB, JK; BISWAS, SK; CHAKRABARTI, P; CHAKRAVORTY, M
Institution: BOSE INST, DEPT CHEM, CALCUTTA 700009, W BENGAL, INDIA;
BANARAS HINDU UNIV, INST MED SCI, DEPT BIOCHEM, VARANASI 221005, UTTAR PRADESH,
INDIA
Source: JOURNAL OF BIOSCIENCES; SEP 1986; v.10, no.3, p.335-349
Publisher: INDIAN ACADEMY SCIENCES
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: An analytical model of GaAs OPFET.
Author: Chakrabarti, P; Gupta, A; Khan, NA
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; BIRLA INST TECHNOL, DEPT ELECT & ELECT ENGN,
RANCHI 835215, BIHAR, INDIA
Source: Solid-State Electronics; Oct. 1996; vol.39, no.10, p.1481-90
Publisher: UK : Elsevier, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Search for placer gold in eastern India - A geomorphological
approach
Author: Chakrabarti, P
Institution: STATE REMOTE SENSING APPLICAT CTR, DEPT SCI & TECHNOL,
CALCUTTA 700091, W BENGAL, INDIA
Source: JOURNAL OF THE GEOLOGICAL SOCIETY OF INDIA; JAN 1996; v.47, no.1,
p.99-105
Publisher: GEOLOGICAL SOC INDIA
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: NUMERICAL-MODEL OF A PROPOSED DOUBLE-HETEROSTRUCTURE
LIGHT-EMITTING DIODE FOR MIDINFRARED APPLICATIONS
Author: CHAKRABARTI, P; SAXENA, V; DAS, SK; RAO, YS; LAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: OPTICAL AND QUANTUM ELECTRONICS; AUG 1994; v.26, no.8, p.885-897
Publisher: CHAPMAN HALL LTD
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Numerical model of a proposed double heterostructure
light-emitting diode for mid-infrared applications.
Author: Chakrabarti, P.; Saxena, V.; Das, SK; Rao, YS; Balaji Lal, B.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Source: Optical and Quantum Electronics; Aug. 1994; vol.26, no.8,
p.885-97
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of intensity-modulated optical radiation on the DC
characteristics of GaAs MESFETs.
Author: CHAKRABARTI, P; MISHRA, BK; AGRAWALLA, SK
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 May 1994; vol.143, no.1, p.169-78
Publisher: Germany : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Switching characteristics of an optically controlled GaAs-MESFET.
Author: CHAKRABARTI, P; SHRESTHA, SK; SRIVASTAVA, A; SAXENA, D
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: IEEE Transactions on Microwave Theory and Techniques; March 1994;
vol.42, no.3, p.365-75
Publisher: USA : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optically controlled characteristics of an ion-implanted
hetero-MIS capacitor.
Author: CHAKRABARTI, P; CHANDRA, A; GUPTA, V; SHAH, HS; KUMAR, YR
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: IEE Proceedings-Optoelectronics; Feb. 1994; vol.141, no.1,
p.27-32
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Microwave characterization of an optically controlled high
electron mobility transistor.
Author: Mishra, BK; Pradeep, V.; Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Nov.-Dec. 1993; vol.39, no.6, p.361-73
Publisher: India : 1993
Doc. Type: Article
Copyright: �2004 IEE
Title: An improved model of ion-implanted GaAs OPFET.
Author: CHAKRABARTI, P; SHRESTHA, NL; SRIVASTAVA, S; KHEMKA, V
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: IEEE Transactions on Electron Devices; Sept. 1992; vol.39, no.9,
p.2050-9
Publisher: USA : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: I-V characteristics of an optically controlled Si-MESFET.
Author: CHAKRABARTI, P; ANAND, R; RAO, VS
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Solid-State Electronics; April 1992; vol.35, no.4, p.587-92
Publisher: UK : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Computer aided modelling of
high-electron-mobility-phototransistor.
Author: Pal, J.; Puri, M.; Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. & Commun. Eng., Biria Inst. of Technol.,
Ranchi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; March-June 1992; vol.38, no.2-3, p.143-6
Publisher: India : 1992
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of illumination on the characteristics of a proposed
hetero-MIS diode.
Author: CHAKRABARTI, P; ABRAHAM, BR; DHINGRA, A; DAS, A; SHARAN, BS;
MAHESHWARI, V
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; VASVI COLL ENGN, DEPT ELECTR & COMMUN ENGN, HYDERABAD,
INDIA; TATA CONSULTANCY SERV, BOMBAY, INDIA; DREXEL UNIV, DEPT ELECT ENGN,
PHILADELPHIA, PA 19104
Source: IEEE Transactions on Electron Devices; March 1992; vol.39, no.3,
p.507-14
Publisher: USA : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: OPTICALLY CONTROLLED CHARACTERISTICS OF A NEW HETEROJUNCTION
FIELD-EFFECT TRANSISTOR
Author: CHAKRABARTI, P; PAL, J
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; FEB 1992; v.54, no.2,
p.186-190
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Numerical simulation for estimating C-V characteristics of MODFETs
under illumination.
Author: CHAKRABARTI, P; KUMAR, T; KUMAR, A; PRASAD, BRN
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Solid-State Electronics; Feb. 1992; vol.35, no.2, p.225-7
Publisher: UK : 1992
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optically controlled characteristics of a new heterojunction field
effect transistor.
Author: Chakrabarti, P.; Pal, J.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Source: Applied Physics A (Solids and Surfaces); Feb. 1992; vol.A54,
no.2, p.186-90
Publisher: Germany : 1992
Doc. Type: Article
Copyright: �2004 IEE
Title: Charge-sheet model of a proposed MISFET photodetector.
Author: CHAKRABARTI, P; GOPAL, IV
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Mesra, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 Dec. 1991; vol.128, no.2, p.521-30
Publisher: Germany : 1991
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of illumination on the capacitance of a proposed MIS diode.
Author: CHAKRABARTI, P; ABRAHAM, BR; DAS, A; SHARAN, BS; MAHESHWARI, V
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Mesra, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 Dec. 1991; vol.128, no.2, p.513-20
Publisher: Germany : 1991
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Comment on 'Effect of radiation and surface recombination on the
characteristics of an ion-implanted GaAs MESFET'.
Author: Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Source: IEEE Transactions on Electron Devices; Nov. 1991; vol.38, no.11,
p.2578
Publisher: USA : 1991
Doc. Type: Article
Copyright: �2004 IEE
Title: Comment on 'Optically controlled characteristics of an
ion-implanted silicon MESFET' by V.K. Singh et al.
Author: Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Source: Solid-State Electronics; Oct. 1991; vol.34, no.10, p.1185
Publisher: UK : 1991
Doc. Type: Article
Copyright: �2004 IEE
Title: EFFECT OF RADIATION AND SURFACE RECOMBINATION ON THE
CHARACTERISTICS OF AN ION-IMPLANTED GAAS-MESFET
Author: CHAKRABARTI, P
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; NOV 1991; v.38, no.11,
p.2578-2578
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article; Letter
Copyright: �2004 Institute for Scientific Information, Inc.
Title: OPTICALLY CONTROLLED CHARACTERISTICS OF AN ION-IMPLANTED SILICON
MESFET - COMMENT
Author: CHAKRABARTI, P
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUNICAT ENGN,
RANCHI 835215, BIHAR, INDIA
Source: SOLID-STATE ELECTRONICS; OCT 1991; v.34, no.10, p.1185-1185
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Doc. Type: Article; Letter
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Optically controlled characteristics of TEGFET.
Author: CHAKRABARTI, P; PURI, M; SINGHAL, A; MISHRA, A
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Physica Status Solidi A; 16 Nov. 1990; vol.122, no.1, p.405-12
Publisher: Germany : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optical effects in modulation-doped-field-effect-transistor.
Author: SINGHAL, A; MISHRA, A; CHAKRABARTI, P
Affiliation: Dept. of Electrons & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Solid-State Electronics; Sept. 1990; vol.33, no.9, p.1214-16
Publisher: UK : 1990
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise characteristics of a new heterojunction avalanche
photodiode.
Author: CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2,
p.97-100
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A long wavelength avalanche photodetector for optical
communications.
Author: CHAKRABARTI, P; ABRAHAM, BR; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1989; vol.32, no.7, p.521-4
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise characteristics of a superlattice avalanche photodiode.
Author: Chakrabarti, P.; Choudhury, SC; Pal, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Source: Applied Physics A (Solids and Surfaces); April 1989; vol.A48,
no.4, p.331-4
Publisher: West Germany : 1989
Doc. Type: Article
Copyright: �2004 IEE
Title: NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4,
p.331-334
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: InP/Ga{sub 0.47}In{sub 0.53}As superlattice avalanche photodiode.
Author: Batra, S.; Lahiri, A.; Chakrabarti, P.
Affiliation: Dept. of Electron. & Commun. Eng., Bina Inst. of Technol.,
Ranchi, India
Source: Electronics Letters; 21 July 1988; vol.24, no.15, p.964-5
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE
Title: A new infrared avalanche photodiode for long distance fiber optic
communication.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1988; vol.31, no.1, p.1-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODE - REPLY
Author: BATRA, S; LAHIRI, A; CHAKRABARTI, P
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: ELECTRONICS LETTERS; OCT 27 1988; v.24, no.22, p.1399-1400
Publisher: IEE-INST ELEC ENG
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: InP/Ga{sub 0.47}In{sub 0.53}As superlattice avalanche photodiode.
Author: BATRA, S; LAHIRI, A; CHAKRABARTI, P
Affiliation: Dept. of Electron. & Commun. Eng., Bina Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA
Source: Electronics Letters; 21 July 1988; vol.24, no.15, p.964-5
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.