| 1.
OPTICALLY CONTROLLED CHARACTERISTICS IN AN ION-IMPLANTED SILICON
MESFET SINGH, VK; CHATTOPADHYAY, SN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1986; v.29, no.7, p.707-711 |
| 2. KINETICS OF
OXIDATION OF ARSENIC(III) BY VANADIUMVV) PAL, BB; SENGUPTA, KK; MUKHERJE*, DC Source: JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY; 1972; v.34, no.11, p.3433-& |
| 3. EFFECT OF
RADIATION AND SURFACE RECOMBINATION ON THE CHARACTERISTICS OF AN
ION-IMPLANTED GAAS-MESFET MISHRA, S; SINGH, VK; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1990; v.37, no.1, p.2-10 |
| 4. KINETICS OF
METAL-ION OXIDATION OF PHENYLPHOSPHONOUS ACID IN SOLUTION .1. OXIDATION BY
VANADIUM(V) SENGUPTA, KK; CHAKLADA*, JK; PAL, BB; MUKHERJE*, DC Source: JOURNAL OF THE CHEMICAL SOCIETY-PERKIN TRANSACTIONS 2; 1973; no.7, p.926-929 |
| 5.
COMPUTER-ANALYSIS OF DC FIELD AND CURRENT-DENSITY PROFILES OF DAR
IMPATT DIODE DATTA, DN; PATI, SP; BANERJEE, JP; PAL, BB; ROY, SK Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1982; v.29, no.11, p.1813-1816 |
| 6. KINETICS OF
OXIDATION OF ANTIMONY(III) BY VANADIUM(V) PAL, BB; SENGUPTA, KK Source: INORGANIC CHEMISTRY; 1975; v.14, no.9, p.2268-2271 |
| 7. GAAS OPFET
CHARACTERISTICS CONSIDERING THE EFFECT OF GATE DEPLETION WITH MODULATION
DUE TO INCIDENT RADIATION PAL, BB; CHATTOPADHYAY, SN Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; MAY 1992; v.39, no.5, p.1021-1027 |
| 8. KINETICS OF
VANADIUM(V) OXIDATION OF PHOSPHORUS ACID SENGUPTA, KK; PAL, BB; MUKHERJE*, DC Source: JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS; 1974; no.2, p.226-229 |
| 9. THE EFFECT OF
SURFACE RECOMBINATION ON THE FREQUENCY-DEPENDENT CHARACTERISTICS OF AN
ION-IMPLANTED GAAS OPFET MISHRA, S; SINGH, VK; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1990; v.37, no.4, p.942-946 |
| 10.
FREQUENCY-DEPENDENT CHARACTERISTICS IN AN ION-IMPLANTED PHOTO
MESFET SINGH, VK; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.1, p.113-118 |
| 11. Optical
effect in InAlAs/InGaAs/InP MODFET Mitra, H; Pal, BB; Singh, S; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; JAN 1998; v.45, no.1, p.68-77 |
| 12. SMALL-SIGNAL
ANALYSIS OF AN IMPATT DEVICE HAVING 2 AVALANCHE LAYERS INTERSPACED BY A
DRIFT LAYER SOM, B; PAL, BB; ROY, SK Source: SOLID-STATE ELECTRONICS; 1974; v.17, no.10, p.1029-1038 |
| 13. ANALYTICAL
MODELING OF AN ION-IMPLANTED SILICON MESFET IN POST-ANNEAL CONDITION
CHATTOPADHYAY, SN; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1989; v.36, no.1, p.81-87 |
| 14.
OPTICALLY-CONTROLLED SWITCHING CHARACTERISTICS OF SILICON MESFETS
SINGH, VK; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.3, p.267-272 |
| 15. MITATT MODE
IN DDR HETEROSTRUCTURE IMPATT KHAN, RU; CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.303-309 |
| 16.
Optically-controlled ion-implanted GaAs MESFET characteristic with
opaque gate Shubha; Pal, BB; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; JAN 1998; v.45, no.1, p.78-84 |
| 17. PROXIMITY
EXPOSURE COMPENSATION AND RESIST DEBRIS FORMATION IN ELECTRON-BEAM
LITHOGRAPHY DESHMUKH, PR; SINGH, M; RANGRA, KJ; VYAS, PD; KHOKLE, WS; PAL, BB Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ; JAN-FEB 1992; v.10, no.1, p.179-182 |
| 18. A NEW
INFRARED AVALANCHE PHOTODIODE FOR LONG-DISTANCE FIBER OPTIC
COMMUNICATION CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1988; v.31, no.1, p.1-3 |
| 19. KINETICS OF
OXIDATION OF HYPOPHOSPHOROUS ACID BY VANADIUM (V) SENGUPTA, KK; PAL, BB; MUKHERJE*, DC Source: ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT; 1970; v.72, no.4-6, p.230-& |
| 20. ENHANCED
OPTICAL EFFECT IN A HIGH ELECTRON-MOBILITY TRANSISTOR DEVICE PAL, BB; MITRA, H Source: OPTICAL ENGINEERING ; APR 1993; v.32, no.4, p.687-691 |
| 21.
TIME-DEPENDENT ANALYSIS OF AN ION-IMPLANTED GAAS OPFET PAL, BB; CHATTOPADHYAY, SN; MISHRA, S; SINGH, S; KHAN, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; APR 1994; v.41, no.4, p.491-498 |
| 22. THE EFFECTS
OF ANNEALING ON THE SWITCHING CHARACTERISTICS OF AN ION-IMPLANTED SILICON
MESFET CHATTOPADHYAY, SN; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1989; v.36, no.5, p.920-929 |
| 23. ELECTRON
IONIZATION RATE IN III-V TERNARY SEMICONDUCTORS SINGH, SR; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.2, p.105-109 |
| 24. OPTIMUM
DESIGN OF A POTENTIALLY DISPERSION-FREE HELICAL SLOW-WAVE CIRCUIT OF A
BROAD-BAND TWT BASU, BN; PAL, BB; SINGH, VN; VAIDYA, NC Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES ; 1984; v.32, no.4, p.461-463 |
| 25. Randomized
controlled trial of intrasphincteric botulinum toxin A injection versus
balloon dilatation in treatment of achalasia cardia Ghoshal, UC; Chaudhuri, S; Pal, BB; Dhar, K; Ray, G; Banerjee, PK Source: DISEASES OF THE ESOPHAGUS; 2001; v.14, no.3-4, p.227-231 |
| 26. ACCURATE
MODELING OF AN ION-IMPLANTED MESFET CHATTOPADHYAY, SN; SINGH, VK; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.4, p.391-396 |
| 27. COMPOSITIONAL
DEPENDENCE OF PERMITTIVITY IN QUARTERNARY III-V-SEMICONDUCTOR
COMPOUNDS PAL, BB Source: SOLID-STATE ELECTRONICS ; 1985; v.28, no.12, p.1235-1239 |
| 28. IONIZATION
RATES OF ELECTRONS AND HOLES IN GAAS CONSIDERING ELECTRON ELECTRON AND
HOLE HOLE INTERACTIONS SINGH, SR; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1985; v.32, no.3, p.599-604 |
| 29.
HIGH-FREQUENCY NOISE PROPERTIES OF A DOUBLE AVALANCHE REGION (DAR)
IMPATT DIODE DATTA, DN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1980; v.23, no.4, p.377-382 |
| 30. DEPENDENCE OF
READ DIODE CHARACTERISTICS ON CURRENT MULTIPLICATION FACTOR IN AVALANCHE
ZONE ROY, SK; SOM, B; PAL, BB Source: PROCEEDINGS OF THE IEEE; 1975; v.63, no.7, p.1072-1073 |
| 31. NOISE
CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4, p.331-334 |
| 32. A UNIFIED
MODEL FOR MESFET ANALYSIS CHATTOPADHYAY, SN; PAL, BB Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 1988; v.3, no.3, p.185-190 |
| 33. EFFECT OF
FINITE CURRENT MULTIPLICATION FACTOR IN AVALANCHE ZONE ON HIGH-FREQUENCY
NOISE PROPERTIES OF READ DIODES PAL, BB; SOM, B; ROY, SK Source: PROCEEDINGS OF THE IEEE ; 1976; v.64, no.8, p.1252-1254 |
| 34. Analysis of
GaAsOPFET with improved optical absorption under back illumination
Roy, NS; Pal, BB; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 1999; v.46, no.12, p.2350-2353 |
| 35.
OPTOELECTRONIC CHARGE-COUPLED-DEVICE (OECCD) USING INP MIS CAPACITOR
ARRAY PAL, BB; NELSON, SS Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; OCT 1993; v.40, no.10, p.1878-1880 |
| 36. A LONG
WAVELENGTH AVALANCHE PHOTODETECTOR FOR OPTICAL COMMUNICATIONS
CHAKRABARTI, P; ABRAHAM, BR; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.7, p.521-524 |
| 37. OPTICAL
CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
CHAKRABARTI, P; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.7, p.675-679 |
| 38. THEORETICAL
CHARACTERIZATION OF A SUPERLATTICE AVALANCHE PHOTODIODE PAL, BB; CHAKRABARTI, P Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3, p.173-177 |
| 39. CHROMIC ACID
OXIDATION OF ATROLACTIC ACID SENGUPTA, KK; CHATTERJ*, AK; PAL, BB; SASMAL, N Source: ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT; 1970; v.72, no.4-6, p.330-& |
| 40. Effect of
signal modulated optical illumination on the Schrodinger wave function in
a quantum well in a modulation doped field effect transistor and related
device characteristics Singh, PK; Pal, BB Source: JOURNAL OF APPLIED PHYSICS; OCT 1 2000; v.88, no.7, p.4325-4333 |
| 41.
Frequency-dependent OPFET characteristics with improved absorption
under back illumination Roy, NS; Pal, BB Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; APR 2000; v.18, no.4, p.604-613 |
| 42. Effect of
illumination on Schrodinger's wave function in the quantum well of MODFET
and related device characteristics Singh, PK; Pal, BB Source: SOLID-STATE ELECTRONICS; OCT 1999; v.43, no.10, p.1833-1843 |
| 43.
FREQUENCY-DEPENDENT BEHAVIOR OF AN ION-IMPLANTED GAAS OPFET CONSIDERING
THE PHOTOVOLTAIC EFFECT AND THE GATE DEPLETION WIDTH MODULATION
PAL, BB; SHUBHA; KUMAR, KH; KHAN, RU Source: SOLID-STATE ELECTRONICS ; MAY 1995; v.38, no.5, p.1097-1102 |
| 44. ENHANCED
OPTICAL EFFECT IN A HIGH-ELECTRON-MOBILITY PHOTOTRANSISTOR DEVICE -
2-DIMENSIONAL MODELING CONSIDERING A REALISTIC VELOCITY-FIELD RELATION
PAL, BB; MITRA, H; SINGH, DP Source: OPTICAL ENGINEERING ; APR 1994; v.33, no.4, p.1250-1254 |
| 45. EFFECT OF
SIGNAL-MODULATED OPTICAL RADIATION ON THE CHARACTERISTICS OF A MODFET
MITRA, H; SINGH, DP; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; APR 1993; v.56, no.4, p.335-341 |
| 46. A MODIFIED IV
RELATION FOR ION-IMPLANTED SI OPFETS PAL, BB; CHATTOPADHAY, SN Source: SOLID-STATE ELECTRONICS ; 1991; v.34, no.10, p.1183-1184 |
| 47. INDUCIBILITY
AND STABILITY OF AUXOTROPHIC MUTATIONS IN MYCOBACTERIUM-FORTUITUM,
MYCOBACTERIUM-SMEGMATIS AND MYCOBACTERIUM-VACCAE SUBRAMANYAM, VR; PAL, BB; MOHANTY, KK Source: LETTERS IN APPLIED MICROBIOLOGY ; 1989; v.8, no.5, p.161-164 |
| 48. EFFECT OF
DIFFUSION AND MODULATED FREQUENCY IN AN ION-IMPLANTED OPFET SINGH, VK; PAL, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES ; 1987; v.34, no.11, p.2270-2279 |
| 49. EFFECT OF
OPTICAL RADIATION IN A PHOTO-DOVATT CHAKRABARTI, P; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4, p.311-315 |
| 50.
EQUIVALENT-CIRCUIT ANALYSIS OF A SYSTEM OF COUPLED HELICAL
TRANSMISSION-LINES IN A COMPLEX ENVIRONMENT SINGH, VN; BASU, BN; PAL, BB; VAIDYA, NC Source: JOURNAL OF APPLIED PHYSICS ; 1983; v.54, no.7, p.4141-4146 |
| 51. GENERALIZED
SMALL-SIGNAL ANALYSIS OF A DAR (DOUBLE AVALANCHE REGION) IMPATT DIODE
DATTA, DN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1982; v.25, no.6, p.435-439 |
| 52. SMALL-SIGNAL
ANALYSIS OF A P-N JUNCTION AVALANCHE DIODE HAVING A UNIFORM AVALANCHE ZONE
AND A DRIFT ZONE FOR UNEQUAL IONIZATION RATES AND DRIFT VELOCITIES OF
ELECTRONS AND HOLES PAL, BB; ROY, SK Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; 1971; v.4, no.12, p.2041-& |
| 53. Incidence and
molecular analysis of Vibrio cholerae associated with cholera outbreak
subsequent to the super cyclone in Orissa, India Chhotray, GP; Pal, BB; Khuntia, HK; Chowdhury, NR; Chakraborty, S; Yamasaki, S; Ramamurthy, T; Takeda, Y; Bhattacharya, SK; Nair, GB Source: EPIDEMIOLOGY AND INFECTION; APR 2002; v.128, no.2, p.131-138 |
| 54. Analysis of
buried gate MESFET under dark and illumination Verma, MK; Pal, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; SEP 2001; v.48, no.9, p.2138-2142 |
| 55. Esophageal
motility changes after endoscopic intravariceal sclerotherapy with
absolute alcohol Ghoshal, UC; Dhar, K; Chaudhuri, S; Pal, BB; Pal, AK; Banerjee, PK Source: DISEASES OF THE ESOPHAGUS; JUN 2000; v.13, no.2, p.148-151 |
| 56.
Frequency-dependent characteristics of an ion-implanted GaAs MESFET
with opaque gate under illumination Roy, NS; Pal, BB; Khan, RU Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; FEB 2000; v.18, no.2, p.221-229 |
| 57.
Seroprevalence of HIV infection among jail inmates in Orissa
Pal, BB; Acharya, AS; Satyanarayana, K Source: INDIAN JOURNAL OF MEDICAL RESEARCH; JUN 1999; v.109, p.199-201 |
| 58. Generalized
dc model of GaAs optical field effect transistor considering ion-implanted
profile Saxena, SR; Lohani, RB; Khan, RU; Pal, BB Source: OPTICAL ENGINEERING; APR 1998; v.37, no.4, p.1343-1352 |
| 59. Phenomenon of
resist debris formation in electron beam lithography and its possible
application Deshmukh, PR; Rangra, KJ; Singh, M; Vyas, PD; Pal, BB Source: VACUUM; NOV 1996; v.47, no.11, p.1305-1311 |
| 60. A
superlattice avalanche region IMPATT diode Chandramohan, KK; Khan, RU; Pal, BB Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; SEP-DEC 1994; v.40, no.5-6, p.261-265 |
| 61. EFFECT OF
CONCENTRATION-DEPENDENT CARRIER MOBILITY AND LIFETIME ON THE
OPTICALLY-CONTROLLED CHARACTERISTICS OF AN HEMT DEVICE PAL, BB; MITRA, H; SINGH, S Source: INTERNATIONAL JOURNAL OF OPTOELECTRONICS ; MAY-JUN 1994; v.9, no.3, p.243-249 |
| 62. SURFACE
RECOMBINATION AND CARRIER-FREQUENCY-DEPENDENT INTRINSIC PARAMETERS OF AN
ION-IMPLANTED GAAS OPFET SINGH, VK; SINGH, SR; PAL, BB Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 1991; v.6, no.4, p.231-236 |
| 63. NOISE
CHARACTERISTICS OF A NEW HETEROJUNCTION AVALANCHE PHOTODIODE
CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB Source: IEE PROCEEDINGS-J OPTOELECTRONICS ; 1990; v.137, no.2, p.97-100 |
| 64. ON THE
SCALING OF AN ION-IMPLANTED SILICON MESFET CHATTOPADHYAY, SN; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1989; v.32, no.2, p.119-123 |
| 65. LARGE-SIGNAL
BEHAVIOR OF DOUBLE-AVALANCHE-REGION IMPATT DIODES CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1987; v.30, no.2, p.147-153 |
| 66. CARRIER
FREQUENCY-DEPENDENT INTRINSIC PARAMETERS IN AN ION-IMPLANTED SILICON
PHOTO-MESFET SINGH, VK; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.44, no.4, p.361-364 |
| 67. STUDY OF
FREQUENCY-RESPONSE OF MULTIPLICATION GAIN OF A 2-LAYER AVALANCHE
PHOTODIODE PAL, BB; ROY, SK Source: PROCEEDINGS OF THE IEEE; 1974; v.62, no.2, p.285-287 |
| 68. A goal
programming procedure for fuzzy multiobjective linear fractional
programming problem Pal, BB; Moitra, BN; Maulik, U Source: FUZZY SETS AND SYSTEMS; OCT 16 2003; v.139, no.2, p.395-405 |
| 69. A fuzzy goal
programming procedure for solving quadratic bilevel programming
problems Pal, BB; Moitra, BN Source: INTERNATIONAL JOURNAL OF INTELLIGENT SYSTEMS; MAY 2003; v.18, no.5, p.529-540 |
| 70. A goal
programming procedure for solving problems with multiple fuzzy goals using
dynamic programming Pal, BB; Moitra, BN Source: EUROPEAN JOURNAL OF OPERATIONAL RESEARCH; FEB 1 2003; v.144, no.3, p.480-491 |
| 71. A new
optoelectronic integrated device for light-amplifying optical switch
(LAOS) Jit, S; Pal, BB Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 2001; v.48, no.12, p.2732-2739 |
| 72. Effect of
substrate illumination on the characteristics of an ion implanted
GaAsOPFET Roy, NS; Pal, BB; Khan, RU Source: IEE PROCEEDINGS-OPTOELECTRONICS; AUG 2000; v.147, no.4, p.237-243 |
| 73. Light
dependence of SOI MOSFET with nonuniform doping profile Abraham, GK; Pal, BB; Khan, RU Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; JUL 2000; v.47, no.7, p.1469-1471 |
| 74. GaAsOPFET
characterisation considering concentration dependent carrier mobility and
life time Mitra, H; Lohani, RB; Shubha; Khan, RU; Pal, BB Source: IETE JOURNAL OF RESEARCH; SEP-DEC 1999; v.45, no.5-6, p.333-339 |
| 75. Effect of
local oscillator and modulating signal on the performance of an
ion-implanted GaAsOPFET Pal, BB; Roy, NS; Ray, DKR; Singh, S; Chattopadhyay, SN Source: IETE JOURNAL OF RESEARCH; MAR-APR 1999; v.45, no.2, p.115-121 |
| 76. Scaling rule
for OPFET Pal, BB; Chattopadhyay, SN Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; FEB 1996; v.43, no.2, p.368-369 |
| 77. Noise
characteristics of a superlattice avalanche region IMPATT diode
Rao, KSVSNP; Pal, BB; Khan, RU Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS; JAN-FEB 1996; v.42, no.1, p.47-51 |
| 78.
THEORETICAL-STUDIES ON THE TRANSIENT-BEHAVIOR OF HIGH-ELECTRON-MOBILITY
PHOTOTRANSISTORS MITRA, H; SINGH, S; PAL, BB Source: OPTICAL ENGINEERING ; AUG 1995; v.34, no.8, p.2475-2480 |
| 79. SPECIAL ISSUE
ON MICROWAVE AND MM WAVE SOURCES AND APPLICATIONS .2. PAL, BB Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS ; JAN-FEB 1994; v.40, no.1, p.2-2 |
| 80. THEORY OF THE
MM WAVE IMPATT DIODE - A REVIEW PAL, BB; KHAN, RU; CHAKRABARTI, P Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS ; JAN-FEB 1994; v.40, no.1, p.35-42 |
| 81. EFFECT OF
OPTICAL RADIATION AND SURFACE RECOMBINATION ON THE RF SWITCHING PARAMETERS
OF A GAAS-MESFET SINGH, VK; PAL, BB Source: IEE PROCEEDINGS-J OPTOELECTRONICS ; 1990; v.137, no.2, p.124-128 |
| 82. ELECTRICAL
CHARACTERISTICS OF AN ION-IMPLANTED P-GA0.47IN0.53AS MESFET AT DIFFERENT
SCHOTTKY-BARRIER HEIGHTS CHATTOPADHYAY, SN; DUTTA, D; PAL, BB Source: SOLID-STATE ELECTRONICS ; 1990; v.33, no.7, p.963-967 |
| 83.
CRYPTOSPORIDIOSIS IN CHILDREN OF EASTERN-INDIA SUBRAMANYAM, VR; BROADHEAD, RL; PAL, BB; PATI, JB; MOHANTY, G Source: ANNALS OF TROPICAL PAEDIATRICS ; 1989; v.9, no.2, p.122-125 |
| 84. THE ELECTRON
IONIZATION RATE IN GA1-XINXASYP1-Y ALLOYS SINGH, SR; PAL, BB Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 1988; v.3, no.5, p.461-463 |
| 85. MODULATED
FREQUENCY-DEPENDENT PARAMETERS OF AN OPFET SINGH, VK; PAL, BB Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1987; v.134, no.9, p.C 581-C 581 |
| 86. HOT-ELECTRON
DRIFT VELOCITY IN III-V SEMICONDUCTORS UNDER THE CONDITION OF IMPACT
IONIZATION SINGH, SR; PAL, BB Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.1, p.53-60 |
| 87. EFFECT OF
INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD PAL, BB; CHAKRABARTI, P Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1987; v.134, no.4, p.C 231-C 231 |
| 88.
COMPUTER-SIMULATION OF ION-IMPLANTED DAR IMPATT AROUND 94-GHZ UNDER
STEADY-STATE CONDITION CHAKRABARTI, P; PAL, BB Source: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 1986; v.94, no.1, p.305-313 Conference: |
| 89. SUPERLATTICE
P1+N+ AVALANCHE PHOTODIODE PAL, BB; SINGH, SR Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY ; 1986; v.133, no.6, p.C226-C226 |
| 90. SIMPLE
COMPUTER METHOD FOR THE STUDY OF FIELD AND CURRENT-DENSITY PROFILES IN
P-I-N AVALANCHE-DIODES GHOSH, R; ROY, SK; PAL, BB Source: INDIAN JOURNAL OF PURE & APPLIED PHYSICS ; 1979; v.17, no.9, p.563-566 |
| 91. MICROWAVE
PROPERTIES OF A PROPOSED READ-LIKE DEVICE WITH VARIABLE CURRENT
MULTIPLICATION IN AVALANCHE ZONE AND AN ADDITIONAL TRANSVERSE FIELD IN
DRIFT ZONE ROY, SK; GOSWAMI, PK; PAL, BB Source: PROCEEDINGS OF THE IEEE ; 1978; v.66, no.1, p.92-94 |
| 92.
SECOND-HARMONIC POWER-GENERATION IN A READ DIODE AND ITS DEPENDENCE ON
FUNDAMENTAL MODE OF OSCILLATIONS PAL, BB; ROY, SK Source: SOLID-STATE ELECTRONICS; 1973; v.16, no.10, p.1207-1210 |
| 93. ANALYTICAL
EXPRESSION FOR SMALL-SIGNAL IMPEDANCE OF A P-N-JUNCTION AVALANCHE-DIODE
HAVING UNEQUAL IONIZATION RATES AND DRIFT VELOCITIES FOR HOLES +
ELECTRONS PAL, BB; ROY, SK Source: INDIAN JOURNAL OF PURE & APPLIED PHYSICS; 1972; v.10, no.3, p.192-& |
| 94. SMALL SIGNAL
ANALYSIS OF SECOND HARMONIC MODE IN A UNIFORMLY AVALANCHING P-I-N DIODE
HAVING UNEQUAL IONIZATION RATES AND DRIFT VELOCITIES FOR ELECTRONS AND
HOLES PAL, BB; SOM, B; ROY, SK Source: INTERNATIONAL JOURNAL OF ELECTRONICS; 1971; v.30, no.4, p.365-& |
Other Publications
Title: A new 2-D model for the potential distribution and threshold
voltage of fully depleted short-channel Si-SOI MESFETs.
Author: Pandey, P; Pal, BB; Jit, S
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Dept Elect Engn, Inst Technol, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Dept Elect Engn, Inst Technol,
Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Feb. 2004; vol.51, no.2,
p.246-54
Publisher: USA : IEEE, 2004
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Analytical model of an optically controlled DCFL inverter using
normally-off MESFETs.
Author: Bandhawakar, G.; Jit, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: 2003 SBMO/IEEE MTT-S International Microwave and Optoelectronics
Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil; p.683-8 vol.2
Conference: 2003 SBMO/IEEE MTT-S International Microwave and
Optoelectronics Conference - IMOC 2003, 20-23 Sept. 2003, Foz do Iguacu, Brazil
Editor: Kalinowski, HJ; Romero, MA; Barbin, SE
Publisher: Piscataway, NJ, USA : IEEE, 2003
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Light-source-integrated OPFET (LSI-OPFET): a new integrated device
for optically controlled varying gain amplifier.
Author: Jit, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Proceedings of the SPIE - The International Society for Optical
Engineering; 2002; vol.4905, p.497-507
Conference: APOC 2002: Asia-Pacific Optical and Wireless Communications.
Materials and Devices for Optical and Wireless Communications, 15-18 Oct. 2002,
Shanghai, China
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2002
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE
Title: Effect of illumination on Schrodinger wave function in the quantum
well of MODFET and related device characteristics.
Author: Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Eleventh International Workshop on the Physics of Semiconductor
Devices, 11-15 Dec. 2001, Delhi, India; p.783-90 vol.2
Conference: Eleventh International Workshop on the Physics of
Semiconductor Devices, 11-15 Dec. 2001, Delhi, India
Editor: Kumar, V.; Basu, PK
Publisher: Washington, DC, USA : SPIE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Enhancement mode MESFET under optically controlled condition.
Author: Bandhawakar, G.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Eleventh International Workshop on the Physics of Semiconductor
Devices, 11-15 Dec. 2001, Delhi, India; p.182-6 vol.1
Conference: Eleventh International Workshop on the Physics of
Semiconductor Devices, 11-15 Dec. 2001, Delhi, India
Editor: Kumar, V.; Basu, PK
Publisher: Washington, DC, USA : SPIE, 2002
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: A new optoelectronic integrated device for light-amplifying
optical switch (LAOS).
Author: Jit, S; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Dec. 2001; vol.48, no.12,
p.2732-9
Publisher: USA : IEEE, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Analysis of buried gate MESFET under dark and illumination.
Author: Verma, MK; Pal, BB
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Ctr Adv
Study Microelect, Varanasi 221005, Uttar Pradesh, India; Banaras Hindu Univ,
Inst Technol, Dept Elect Engn, Ctr Adv Study Microelect, Varanasi 221005, Uttar
Pradesh, India
Source: IEEE Transactions on Electron Devices; Sept. 2001; vol.48, no.9,
p.2138-42
Publisher: USA : IEEE, 2001
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: OPFET-LAOS: a new optoelectronic integrated device for light
amplifying optical switch.
Author: Jit, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Proceedings of the SPIE - The International Society for Optical
Engineering; 2001; vol.4580, p.131-40
Conference: APOC 2001: Asia-Pacific Optical and Wireless Communications.
Optoelectronics, Materials, and Devices for Communications, 12-15 Nov. 2001,
Beijing, China
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2001
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE
Title: Optically controlled E-MESFET for VLSI application.
Author: Bandhawakar, G.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Proceedings of the SPIE - The International Society for Optical
Engineering; 2001; vol.4600, p.43-54
Conference: Advances in Microelectronic Device Technology, 7-9 Nov. 2001,
Nanjing, China
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2001
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE
Title: Effect of signal modulated optical illumination on the Schrodinger
wave function in a quantum well in a modulation doped field effect transistor
and related device characteristics.
Author: Singh, PK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Journal of Applied Physics; 1 Oct. 2000; vol.88, no.7, p.4325-33
Publisher: USA : AIP, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of substrate illumination on the characteristics of an ion
implanted GaAs OPFET.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: IEE Proceedings-Optoelectronics; Aug. 2000; vol.147, no.4,
p.237-43
Publisher: UK : IEE, 2000
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of substrate illumination on the characteristics of an ion
implanted GaAsOPFET
Author: Roy, NS; Pal, BB; Khan, RU
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEE PROCEEDINGS-OPTOELECTRONICS; AUG 2000; v.147, no.4, p.237-243
Publisher: IEE-INST ELEC ENG
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Light dependence of SOI MOSFET with nonuniform doping profile.
Author: Abraham, GK; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; July 2000; vol.47, no.7,
p.1469-71
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Frequency-dependent OPFET characteristics with improved absorption
under back illumination.
Author: Saha Roy, N.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Journal of Lightwave Technology; April 2000; vol.18, no.4,
p.604-13
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE
Title: Frequency-dependent OPFET characteristics with improved absorption
under back illumination
Author: Roy, NS; Pal, BB
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: JOURNAL OF LIGHTWAVE TECHNOLOGY; APR 2000; v.18, no.4, p.604-613
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Frequency-dependent characteristics of an ion-implanted GaAs
MESFET with opaque gate under illumination.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Journal of Lightwave Technology; Feb. 2000; vol.18, no.2, p.221-9
Publisher: USA : IEEE, 2000
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: I-V characteristics of a p-channel depletion mode SOI MESFET.
Author: Abraham, GK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Seventh National Symposium on Antennas and Propagation, 6-8 Dec.
2000, Cochin, India; p.104-7
Conference: Seventh National Symposium on Antennas and Propagation, 6-8
Dec. 2000, Cochin, India
Editor: Nair, KG; Vasudevan, K.; Mathew, KT; Mohanan, P.; Aanandan, CK
Publisher: Cochin, India : CREMA, Cochin Univ. Sci. & Technol, 2000
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Signal modulated OPFET behaviour under back illumination.
Author: Nandita Saba Roy; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Proceedings of the SPIE - The International Society for Optical
Engineering; 2000; vol.3975, pt.1-2, p.645-8
Conference: Tenth International Workshop on the Physics of Semiconductor
Devices, 14-18 Dec. 1999, New Delhi, India
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 2000
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE
Title: Analysis of GaAs OPFET with improved optical absorption under back
illumination.
Author: Roy, NS; Pal, BB; Khan, RU
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: IEEE Transactions on Electron Devices; Dec. 1999; vol.46, no.12,
p.2350-3
Publisher: USA : IEEE, 1999
Doc. Type: Article
Copyright: �2004 IEE
Title: Analysis of GaAsOPFET with improved optical absorption under back
illumination
Author: Roy, NS; Pal, BB; Khan, RU
Institution: Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar
Pradesh, India; Banaras Hindu Univ, Inst Technol, Varanasi 221005, Uttar
Pradesh, India
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; DEC 1999; v.46, no.12,
p.2350-2353
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Effect of illumination on Schrodinger's wave function in the
quantum well of MODFET and related device characteristics.
Author: Singh, PK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: Solid-State Electronics; Oct. 1999; vol.43, no.10, p.1833-43
Publisher: UK : Elsevier, 1999
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: GaAsOPFET characterisation considering concentration dependent
carrier mobility and life time
Author: Mitra, H; Lohani, RB; Shubha; Khan, RU; Pal, BB
Institution: Diesel Locomot Works, Varanasi 221004, Uttar Pradesh, India;
Diesel Locomot Works, Varanasi 221004, Uttar Pradesh, India; Banaras Hindu Univ,
Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
Source: IETE JOURNAL OF RESEARCH; SEP-DEC 1999; v.45, no.5-6, p.333-339
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Effect of local oscillator and modulating signal on the
performance of an ion-implanted GaAs OPFET.
Author: Pal, BB; Roy, NS; Raut Ray, DK; Singh, S.; Chattopadhyay, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: IETE Journal of Research; March-April 1999; vol.45, no.2,
p.115-21
Publisher: India : Instn. Electron. & Telecommun. Eng, 1999
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of local oscillator and modulating signal on the
performance of an ion-implanted GaAsOPFET
Author: Pal, BB; Roy, NS; Ray, DKR; Singh, S; Chattopadhyay, SN
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India; VLSI Design Semicond Complex Ltd,
Chandigarh 160059, India; UP Coll, Dept Phys, Varanasi 221005, Uttar Pradesh,
India; Univ Calcutta, Inst Radio Phys & Elect, Calcutta 700009, W Bengal, India
Source: IETE JOURNAL OF RESEARCH; MAR-APR 1999; v.45, no.2, p.115-121
Publisher: INST ELECTRONICS TELECOMMUNICATION ENGINEERS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Schrodinger's wave function and related device characteristics in
MODFET under illumination.
Author: Singh, PK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., India
Source: Proceedings of the SPIE - The International Society for Optical
Engineering; 1999; vol.3666, p.252-9
Conference: International Conference on Fiber Optics and Photonics:
Selected Papers from Photonics India '98, 14-18 Dec. 1998, New Delhi, India
Publisher: USA : SPIE-Int. Soc. Opt. Eng, 1999
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE
Title: Generalized DC model of GaAs optical field effect transistor
considering ion-implanted profile.
Author: Saxena, SR; Lohani, RB; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India; COET, Dept Elect Engn, Jalgaon 425001,
India
Source: Optical Engineering; April 1998; vol.37, no.4, p.1343-52
Publisher: USA : SPIE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optically-controlled ion-implanted GaAs MESFET characteristic with
opaque gate.
Author: Shubha; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Jan. 1998; vol.45, no.1,
p.78-84
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optical effect in InAlAs/InGaAs/InP MODFET.
Author: Mitra, H; Pal, BB; Singh, S; Khan, RU
Affiliation: D.L.W., Varanasi, India
Institution: Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi
221005, Uttar Pradesh, India; Banaras Hindu Univ, Inst Technol, Dept Elect Engn,
Varanasi 221005, Uttar Pradesh, India; Udai Pratap Coll, Dept Phys, Varanasi
221002, Uttar Pradesh, India
Source: IEEE Transactions on Electron Devices; Jan. 1998; vol.45, no.1,
p.68-77
Publisher: USA : IEEE, 1998
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Phenomenon of resist debris formation in electron beam lithography
and its possible application.
Author: Deshmukh, PR; Rangra, KJ; Singh, M; Vyas, PD; Pal, BB
Affiliation: Central Electron. Eng. Res. Inst., Pilani, India
Institution: CENT ELECT ENGN RES INST, SEMICOND DEVICES AREA, PILANI
333031, RAJASTHAN, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Vacuum; Nov. 1996; vol.47, no.11, p.1305-11
Publisher: UK : Elsevier, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Scaling rule for OPFET.
Author: Pal, BB; Chattopadhyay, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; USHA INDIA LTD, FARIDABAD 121003, INDIA
Source: IEEE Transactions on Electron Devices; Feb. 1996; vol.43, no.2,
p.368-9
Publisher: USA : IEEE, 1996
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise characteristics of a superlattice avalanche region IMPATT
diode
Author: Rao, KSVSNP; Pal, BB; Khan, RU
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION
ENGINEERS; JAN-FEB 1996; v.42, no.1, p.47-51
Publisher: INST ELECTR TELECOMMUN ENGRS
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Noise characteristics of a superlattice avalanche region IMPATT
diode.
Author: Prasad Rao, KSV SN; Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Jan.-Feb. 1996; vol.42, no.1, p.47-51
Publisher: India : Instn. Electron. & Telecommun. Eng, 1996
Doc. Type: Article
Copyright: �2004 IEE
Title: Ion implanted GaAs MESFET characteristics for different dopants
and implanted energy.
Author: Singh, JS; Khan, RU; Pal, BB; Chattopadhyay, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.130-2
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: InAlAs-InGaAs-InP modulation doped optoelectronic field effect
transistor (MODOFET) for 1.3-1.6 mu m systems.
Author: Mitra, H.; Puri, M.; Singh, S.; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.127-9
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Effect of concentration dependent carrier mobility and life time
on GaAs OPFET characteristics.
Author: Shubha; Lohani, RB; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.125-6
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: The transient and DC characteristics of a high electron mobility
photo transistor.
Author: Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India; p.94-9
Conference: Semiconductor Devices, 11-16 Dec. 1995, New Delhi, India
Editor: Lal, K.
Publisher: New Delhi, India : Narosa Publishing House,
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: Theoretical studies on the transient behavior of high electron
mobility phototransistors.
Author: MITRA, H; SINGH, S; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; UDAI PRATAP COLL, VARANASI 221005, UTTAR PRADESH,
INDIA; INDIRA GANDHI NATL OPEN UNIV, CTR VARANASI STUDY, NEW DELHI, INDIA
Source: Optical Engineering; Aug. 1995; vol.34, no.8, p.2475-80
Publisher: USA : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Frequency dependent behaviour of an ion implanted GaAs OPFET
considering the photovoltaic effect and the gate depletion width modulation.
Author: PAL, BB; SHUBHA; KUMAR, KH; KHAN, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; May 1995; vol.38, no.5, p.1097-102
Publisher: UK : 1995
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optical effect in small geometry devices.
Author: Pal, BB; Sahoo, RK
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Proceedings of the SPIE - The International Society for Optical
Engineering; 1995; vol.2397, p.236-41
Conference: Optoelectronic Integrated Circuit Materials, Physics, and
Devices, 6-9 Feb. 1995, San Jose, CA, USA
Publisher: USA : 1995
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE
Title: A superlattice avalanche region IMPATT diode.
Author: Chandramohan, KK; Khan, RU; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Sept.-Dec. 1994; vol.40, no.5-6, p.261-5
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: EFFECT OF CONCENTRATION-DEPENDENT CARRIER MOBILITY AND LIFETIME ON
THE OPTICALLY-CONTROLLED CHARACTERISTICS OF AN HEMT DEVICE
Author: PAL, BB; MITRA, H; SINGH, S
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; UP COLL, DEPT PHYS, VARANASI 221002, INDIA
Source: INTERNATIONAL JOURNAL OF OPTOELECTRONICS; MAY-JUN 1994; v.9,
no.3, p.243-249
Publisher: TAYLOR & FRANCIS LTD
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Effect of concentration-dependent carrier mobility and lifetime on
the character-controlled characteristics of an HEMT device.
Author: Pal, BB; Mitra, H.; Singh, S.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: International Journal of Optoelectronics; May-June 1994; vol.9,
no.3, p.243-9
Publisher: UK : 1994
Doc. Type: Article
Copyright: �2004 IEE
Title: ENHANCED OPTICAL EFFECT IN A HIGH-ELECTRON-MOBILITY
PHOTOTRANSISTOR DEVICE - 2-DIMENSIONAL MODELING CONSIDERING A REALISTIC
VELOCITY-FIELD RELATION
Author: PAL, BB; MITRA, H; SINGH, DP
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005,
UTTAR PRADESH, INDIA
Source: OPTICAL ENGINEERING; APR 1994; v.33, no.4, p.1250-1254
Publisher: SOC PHOTO-OPT INSTRUM ENG
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Enhanced optical effect in a high-electron-mobility
phototransistor device: two-dimensional modeling considering a realistic
velocity-field relation.
Author: Pal, BB; Mitra, H.; Singh, DP
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Optical Engineering; April 1994; vol.33, no.4, p.1250-4
Publisher: USA : 1994
Doc. Type: Article
Copyright: �2004 IEE
Title: Time dependent analysis of an ion-implanted GaAs OPFET.
Author: PAL, BB; CHATTOPADHYAY, SN; MISHRA, S; SINGH, S; KHAN, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, IT, DEPT ELECTR ENGN, VARANASI 221005,
UTTAR PRADESH, INDIA; UP COLL, DEPT PHYS, VARANASI, INDIA
Source: IEEE Transactions on Electron Devices; April 1994; vol.41, no.4,
p.491-8
Publisher: USA : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: SPECIAL ISSUE ON MICROWAVE AND MM WAVE SOURCES AND APPLICATIONS
.2.
Author: PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION
ENGINEERS; JAN-FEB 1994; v.40, no.1, p.2-2
Publisher: INST ELECTR TELECOMMUN ENGRS
Doc. Type: Editorial Material; Miscellaneous
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Theory of the MM wave IMPATT diode: A review.
Author: PAL, BB; KHAN, RU; CHAKRABARTI, P
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Jan.-Feb. 1994; vol.40, no.1, p.35-42
Publisher: India : 1994
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Optoelectronic charge coupled device (OECCD) using InP MIS
capacitor array.
Author: PAL, BB; NELSON, SS
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; Oct. 1993; vol.40, no.10,
p.1878-80
Publisher: USA : 1993
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: EFFECT OF SIGNAL-MODULATED OPTICAL RADIATION ON THE
CHARACTERISTICS OF A MODFET
Author: MITRA, H; SINGH, DP; PAL, BB
Institution: BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005, UTTAR
PRADESH, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; APR 1993; v.56, no.4,
p.335-341
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Effect of signal-modulated optical radiation on the
characteristics of a MODFET.
Author: Mitra, H.; Singh, DP; Pal, BB
Affiliation: Banaras Hindu Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1993; vol.A56,
no.4, p.335-41
Publisher: Germany : 1993
Doc. Type: Article
Copyright: �2004 IEE
Title: Enhanced optical effect in a high electron mobility transistor
device.
Author: PAL, BB; MITRA, H
Affiliation: Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA; BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005,
UTTAR PRADESH, INDIA
Source: Optical Engineering; April 1993; vol.32, no.4, p.687-91
Publisher: USA : 1993
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: GaAs OPFET characteristics considering the effect of gate
depletion with modulation due to incident radiation.
Author: PAL, BB; CHATTOPADHYAY, SN
Affiliation: Dept. of Electr. Eng., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECT ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; May 1992; vol.39, no.5,
p.1021-7
Publisher: USA : 1992
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: GaAs MESFET modelling considering the effect of rapid thermal
annealing.
Author: Chattopadhyay, SN; Pal, BB
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; March-June 1992; vol.38, no.2-3, p.112-19
Publisher: India : 1992
Doc. Type: Article
Copyright: �2004 IEE
Title: Proximity exposure compensation and resist debris formation in
electron beam lithography.
Author: DESHMUKH, PR; SINGH, M; RANGRA, KJ; VYAS, PD; KHOKLE, WS; PAL, BB
Affiliation: Semicond. Devices Area, Central Electron. Eng. Res. Inst.,
Pilani, India
Institution: CENT ELECT ENGN RES INST, SEMICOND DEVICES AREA, PILANI
333031, RAJASTHAN, INDIA, BANARAS HINDU UNIV, DEPT MICROELECTR ENGN INST
TECHNOL, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: Journal of Vacuum Science & Technology B (Microelectronics
Processing and Phenomena); Jan.-Feb. 1992; vol.10, no.1, p.179-82
Publisher: USA : 1992
Doc. Type: Article; NOTE
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Quantum well injection transit time device (QWITT).
Author: Pal, BB; Khan, RU
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Conference on the Physics and Technology of Semiconductor Devices
and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India; p.2-11
Conference: Conference on the Physics and Technology of Semiconductor
Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India
Publisher: New Delhi, India : Tata McGraw-Hill, 1992
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: The effect of surface recombination and modulated frequency on the
intrinsic parameters of an ion implanted GaAs OPFET.
Author: Singh, VK; Pal, BB; Singh, SR
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Conference on the Physics and Technology of Semiconductor Devices
and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India; p.305-8
Conference: Conference on the Physics and Technology of Semiconductor
Devices and Integrated Circuits (SPIE Vol.1523), 5-7 Feb. 1992, Madras, India
Publisher: New Delhi, India : Tata McGraw-Hill, 1992
Doc. Type: Conference Publication
Copyright: �2004 IEE
Title: A modified I-V relation for ion-implanted Si OPFETs.
Author: PAL, BB; CHATTOPADHAY, SN
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Oct. 1991; vol.34, no.10, p.1183-4
Publisher: UK : 1991
Doc. Type: Article; Letter
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Surface recombination and carrier-frequency-dependent intrinsic
parameters of an ion-implanted GaAs OPFET.
Author: SINGH, VK; SINGH, SR; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Semiconductor Science and Technology; April 1991; vol.6, no.4,
p.231-6
Publisher: UK : 1991
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Electrical characteristics of an ion-implanted p-Ga{sub
0.47}In{sub 0.53}As MESFET at different Schottky barrier heights.
Author: Chattopadhyay, SN; Dutta, D.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Solid-State Electronics; July 1990; vol.33, no.7, p.963-7
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE
Title: The effect of surface recombination on the frequency-dependent
characteristics of an ion-implanted GaAs OPFET.
Author: MISHRA, S; SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; April 1990; vol.37, no.4,
p.942-6
Publisher: USA : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of optical radiation and surface recombination on the RF
switching parameters of a GaAs MESFET.
Author: SINGH, VK; PAL, BB
Affiliation: Inst. of Technol., Banaras Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2,
p.124-8
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Noise characteristics of a new heterojunction avalanche
photodiode.
Author: CHAKRABARTI, P; CHOWDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEE Proceedings J (Optoelectronics); April 1990; vol.137, no.2,
p.97-100
Publisher: UK : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of radiation and surface recombination on the
characteristics of an ion-implanted GaAs MESFET.
Author: MISHRA, S; SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; Jan. 1990; vol.37, no.1,
p.2-10
Publisher: USA : 1990
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Electrical characteristics of an ion-implanted p-Ga{sub
0.47}In{sub 0.53}As MESFET at different Schottky barrier heights.
Author: CHATTOPADHYAY, SN; DUTTA, D; PAL, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1990; vol.33, no.7, p.963-7
Publisher: UK : 1990
Doc. Type: Article; Note
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A long wavelength avalanche photodetector for optical
communications.
Author: CHAKRABARTI, P; ABRAHAM, BR; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL & SCI, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1989; vol.32, no.7, p.521-4
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: The effects of annealing on the switching characteristics of an
ion-implanted silicon MESFET.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; May 1989; vol.36, no.5,
p.920-9
Publisher: USA : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: On the scaling of an ion-implanted silicon MESFET.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Feb. 1989; vol.32, no.2, p.119-23
Publisher: UK : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Analytical modeling of an ion-implanted silicon MESFET in
post-anneal condition.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, FAC TECHNOL, DEPT ELECT ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE Transactions on Electron Devices; Jan. 1989; vol.36, no.1,
pt.1, p.81-7
Publisher: USA : 1989
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: NOISE CHARACTERISTICS OF A SUPERLATTICE AVALANCHE PHOTODIODE
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA, BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1989; v.48, no.4,
p.331-334
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: A unified model for MESFET analysis.
Author: CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Semiconductor Science and Technology; March 1988; vol.3, no.3,
p.185-90
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A new infrared avalanche photodiode for long distance fiber optic
communication.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. & Commun. Eng., Birla Inst. of Technol.,
Ranchi, India
Institution: BIRLA INST TECHNOL, DEPT ELECTR & COMMUN ENGN, RANCHI
835215, BIHAR, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1988; vol.31, no.1, p.1-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: The electron ionisation rate in Ga{sub 1-x}In{sub x}As{sub y}P{sub
1-y} alloys.
Author: SINGH, SR; PAL, BB
Affiliation: Dept. of Electron. Eng., Hindu Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Semiconductor Science and Technology; May 1988; vol.3, no.5,
p.461-3
Publisher: UK : 1988
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Carrier frequency-dependent intrinsic parameters in an
ion-implanted silicon photoMESFET.
Author: Singh, VK; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); Dec. 1987; vol.A44,
no.4, p.361-4
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of diffusion and modulated frequency in an ion-implanted
OPFET.
Author: Singh, VK; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: IEEE Transactions on Electron Devices; Nov. 1987; vol.ED-34,
no.11, p.2270-9
Publisher: USA : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Optical characteristics of a superlattice avalanche photodiode.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1987; vol.30, no.7, p.675-9
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Electron ionization rate in III-V ternary semiconductors.
Author: Singh, SR; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); June 1987; vol.A43,
no.2, p.105-9
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Hot-electron drift velocity in III-V semiconductors under the
condition of impact ionization.
Author: Singh, SR; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Applied Physics A (Solids and Surfaces); May 1987; vol.A43, no.1,
p.53-60
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Accurate modeling of an ion-implanted MESFET.
Author: CHATTOPADHYAY, SN; SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng. , Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
MICROELECTR & DEVICES LAB, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; April 1987; vol.30, no.4, p.391-6
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Effect of optical radiation in a photo-DOVATT.
Author: Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42,
no.4, p.311-15
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: MITATT mode in DDR heterostructure Impatt.
Author: Khan, RU; Chakrabarti, P.; Pal, BB
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Applied Physics A (Solids and Surfaces); April 1987; vol.A42,
no.4, p.303-9
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Optically-controlled switching characteristics of silicon MESFETs.
Author: SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, MICROELECTR & DEVICES
LAB, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; March 1987; vol.30, no.3, p.267-72
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Theoretical characterisation of a superlattice avalanche
photodiode.
Author: Pal, BB; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Applied Physics A (Solids and Surfaces); March 1987; vol.A42,
no.3, p.173-7
Publisher: West Germany : 1987
Doc. Type: Article
Copyright: �2004 IEE
Title: Large-signal behaviour of double-avalanche-region IMPATT diodes.
Author: CHAKRABARTI, P; CHOUDHURY, SC; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Feb. 1987; vol.30, no.2, p.147-54
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Frequency dependent characteristics in an ion-implanted photo
MESFET.
Author: SINGH, VK; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
MICROELECTR & DEVICE LAB, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Jan. 1987; vol.30, no.1, p.113-18
Publisher: UK : 1987
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: CARRIER FREQUENCY-DEPENDENT INTRINSIC PARAMETERS IN AN
ION-IMPLANTED SILICON PHOTO-MESFET
Author: SINGH, VK; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
MICROELECTR & DEVICE LAB, VARANASI 221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.44, no.4,
p.361-364
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: EFFECT OF DIFFUSION AND MODULATED FREQUENCY IN AN ION-IMPLANTED
OPFET
Author: SINGH, VK; PAL, BB
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, VARANASI 221005, UTTAR
PRADESH, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; NOV 1987; v.34, no.11,
p.2270-2279
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: MODULATED FREQUENCY-DEPENDENT PARAMETERS OF AN OPFET
Author: SINGH, VK; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; SEP 1987; v.134, no.9,
p.C581-C581
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.
Title: ELECTRON IONIZATION RATE IN III-V TERNARY SEMICONDUCTORS
Author: SINGH, SR; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.2,
p.105-109
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: HOT-ELECTRON DRIFT VELOCITY IN III-V SEMICONDUCTORS UNDER THE
CONDITION OF IMPACT IONIZATION
Author: SINGH, SR; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.43, no.1, p.53-60
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: EFFECT OF INFRARED IN A NEW INAS/IN ASSB HETEROSTRUCTURE APD
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, FAC TOXICOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; APR 1987; v.134, no.4,
p.C231-C231
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.
Title: MITATT MODE IN DDR HETEROSTRUCTURE IMPATT
Author: KHAN, RU; CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4,
p.303-309
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: EFFECT OF OPTICAL RADIATION IN A PHOTO-DOVATT
Author: CHAKRABARTI, P; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.4,
p.311-315
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: THEORETICAL CHARACTERIZATION OF A SUPERLATTICE AVALANCHE
PHOTODIODE
Author: PAL, BB; CHAKRABARTI, P
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA,
Source: APPLIED PHYSICS A-SOLIDS AND SURFACES ; 1987; v.42, no.3,
p.173-177
Doc. Type: ARTICLE
Copyright: �2004 Institute for Scientific Information, Inc.
Title: A new solid-state device as a source of power in mm wave.
Author: Pal, BB; Khan, RU; Chakrabarti, P.
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Sept.-Oct. 1986; vol.32, no.5, p.397-402
Publisher: India : 1986
Doc. Type: Article
Copyright: �2004 IEE
Title: Optically controlled characteristics in an ion-implanted silicon
MESFET.
Author: SINGH, VK; CHATTOPADHYAY, SN; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; July 1986; vol.29, no.7, p.707-11
Publisher: UK : 1986
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: Computer simulation of ion-implanted DAR Impatt around 94 GHz
under steady state condition.
Author: CHAKRABARTI, P; PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Physica Status Solidi A; 16 March 1986; vol.94, no.1, p.305-13
Conference: Working Meeting on Ion Implantation in Semiconductors and
Other Materials and Ion Beam Devices, 13-18 Oct. 1985, Balatonaliga, Hungary
Publisher: East Germany : 1986
Doc. Type: Article; Conference Publication
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: SUPERLATTICE P1+N+ AVALANCHE PHOTODIODE
Author: PAL, BB; SINGH, SR
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: JOURNAL OF THE ELECTROCHEMICAL SOCIETY; JUN 1986; v.133, no.6,
p.C226-C226
Publisher: ELECTROCHEMICAL SOC INC
Doc. Type: Conference Publication; Meeting Abstract
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Compositional dependence of permittivity in quaternary III-V
semiconductor compounds.
Author: PAL, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; Dec. 1985; vol.28, no.12, p.1235-9
Publisher: UK : 1985
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: DC computer simulation of GaAs DAR IMPATT suitable for MM wave.
Author: Pal, BB; Choudhury, SC
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; May-June 1985; vol.31, no.3, p.106-8
Publisher: India : 1985
Doc. Type: Article
Copyright: �2004 IEE
Title: Ionization rates of electrons and holes in GaAs considering
electron-electron and hole-hole interactions.
Author: Singh, SR; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: IEEE Transactions on Electron Devices; March 1985; vol.ED-32,
no.3, p.599-604
Publisher: USA : 1985
Doc. Type: Article
Copyright: �2004 IEE
Title: IONIZATION RATES OF ELECTRONS AND HOLES IN GAAS CONSIDERING
ELECTRON ELECTRON AND HOLE HOLE INTERACTIONS
Author: SINGH, SR; PAL, BB
Institution: BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN, VARANASI
221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; 1985; v.32, no.3,
p.599-604
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article
Copyright: �2004 Institute for Scientific Information, Inc.
Title: A high efficiency high power DOVATT diode in the X-band.
Author: Khan, RU; Chaudhary, SC; Pal, BB
Affiliation: Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi,
India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Sept. 1984; vol.30, no.5, p.121-4
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE
Title: Design curves for an inhomogeneously-loaded helical slow-wave
structure for a broad-band travelling-wave tube.
Author: Singh, VN; Pal, BB; Basu, BN; Vaidya, NC
Affiliation: Dept. of Electron. Eng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; May 1984; vol.30, no.3, p.55-7
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE
Title: Optimum design of a potentially dispersion-free helical slow-wave
circuit of a broadband TWT.
Author: Basu, BN; Pal, BB; Singh, VN; Vaidya, NC
Affiliation: Dept. of Electronic Engng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: IEEE Transactions on Microwave Theory and Techniques; April 1984;
vol.MTT-32, no.4, p.461-3
Publisher: USA : 1984
Doc. Type: Article
Copyright: �2004 IEE
Title: Effect of impurity concentration and biasing-current density on
the performance of a new DDR heterojunction IMPATT diode.
Author: Pal, BB; Khan, RU
Affiliation: Dept of Electronics Engng., Inst. of Technol., Banaras Hindu
Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Jan. 1984; vol.30, no.1, p.22-4
Publisher: India : 1984
Doc. Type: Article
Copyright: �2004 IEE
Title: OPTIMUM DESIGN OF A POTENTIALLY DISPERSION-FREE HELICAL SLOW-WAVE
CIRCUIT OF A BROAD-BAND TWT
Author: BASU, BN; PAL, BB; SINGH, VN; VAIDYA, NC
Institution: BANARAS HINDU UNIV, DEPT ELECTR ENGN, CTR RES MICROWAVE
TUBES, VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; 1984; v.32,
no.4, p.461-463
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article; Note
Copyright: �2004 Institute for Scientific Information, Inc.
Title: Equivalent circuit analysis of a system of coupled helical
transmission lines in a complex environment.
Author: SINGH, VN; BASU, BN; PAL, BB; VAIDYA, NC
Affiliation: Dept. of Electronics Engng., Banaras Hindu Univ., Varanasi,
India
Institution: BANARAS HINDU UNIV, CTR RES MICROWAVE TUBES, INST TECHNOL,
DEPT ELECTR ENGN, VARANASI 221005, UTTAR PRADESH, INDIA
Source: Journal of Applied Physics; July 1983; vol.54, no.7, p.4141-6
Publisher: USA : 1983
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: A comparative study of the properties of single velocity and
double velocity hetero-junction IMPATT diodes.
Author: Khan, RU; Pal, BB
Affiliation: Dept. of Electronics Engng., Inst. of Technol., Banaras
Hindu Univ., Varanasi, India
Source: Journal of the Institution of Electronics and Telecommunication
Engineers; Feb. 1983; vol.29, no.2, p.68-71
Publisher: India : 1983
Doc. Type: Article
Copyright: �2004 IEE
Title: Generalised small signal analysis of a DAR (double avalanche
region) IMPATT diode.
Author: DATTA, DN; PAL, BB
Affiliation: Centre of Advanced Study in Radio Phys. & Electronics, Univ.
of Calcutta, Calcutta, India
Institution: UNIV CALCUTTA, CTR ADV STUDY RADIO PHYS & ELECTR, CALCUTTA
700009, W BENGAL, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: Solid-State Electronics; June 1982; vol.25, no.6, p.435-9
Publisher: UK : 1982
Doc. Type: Article
Copyright: �2004 IEE; Institute for Scientific Information, Inc.
Title: COMPUTER-ANALYSIS OF DC FIELD AND CURRENT-DENSITY PROFILES OF DAR
IMPATT DIODE
Author: DATTA, DN; PATI, SP; BANERJEE, JP; PAL, BB; ROY, SK
Institution: UNIV CALCUTTA, CTR ADV STUDY RADIO PHYS & ELECTR, CALCUTTA
700009, W BENGAL, INDIA; BANARAS HINDU UNIV, INST TECHNOL, DEPT ELECTR ENGN,
VARANASI 221005, UTTAR PRADESH, INDIA
Source: IEEE TRANSACTIONS ON ELECTRON DEVICES; 1982; v.29, no.11,
p.1813-1816
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Doc. Type: Article; Note
Copyright: �2004 Institute for Scientific Information, Inc.